SD5000

SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . . . . P RELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION P OUT = 1.5 W MIN. WITH 9.5 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD5000 BRANDING S10A015 PIN CONNECTION DESCRIPTION The SD5000 is a NPN Silicon Transistor designed for high gain linear performance at 1000 MHz. This part uses gold metallized die and polysilicon site ballasting to achieve high reliability and ruggedness. The SD5000 can be used for applications such as Telecommunications, Radar, ECM, Space and other commercial and military systems. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 50 50 3.5 1.0 7.0 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 25 °C/W 1/4 November 1992 SD5000 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit BVCBO BVEBO BVCES BVCEO ICBO hFE DYNAMIC Symbol IC = 10mA IE = 5mA IC = 10mA IC = 5mA VCB = 28V VCE = 5V IC = 100mA 50 3.5 50 23 — 18 — — — — 0.2 — — — — — — 200 V V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT 1dB f = 1 GHz GP VSWR COB : VCC = 20 V VCC = 20 V VCC = 20 V VCB = 20 V IC = 220 mA IC = 220 mA IC = 220 mA 1.5 9.5 — — — — — — — — 25:1 4.0 W dB — pF f = 1 GHz f = 1 GHz f = 1 MHz 2/4 SD5000 IMPEDANCE DATA FREQ. 1000 MHz Z IN (Ω) 4.0 + j 3.3 ZCL (Ω) 20.8 + j 33.3 T EST CIRCUIT B1, B2 : Ferrite Beads C1,C2 C3 C4 C5,C6 C7,C8 : 120 pF Chip Capacitor : .4 - 2.5 pF Johanson Capacitor : .8 - 8 pF Johanson Capacitor : 220 pF Chip Capacitor C9,C10 : 1000 pF Chip Capacitor C11 : .1µF Capacitor C12,C13 : 15,000 pF EMI Filter L1,L2 : 5 Turn Choke; Wire Diameter .025”, I.D. 0.125” Substrate material: Er = 10.2, H = .050”, 1oz. Copper 3/4 SD5000 P ACKAGE MECHANICAL DATA Ref.: Dwg. No. 12-0122 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4