SD56120C

SD56120C RF power transistor, the LdmoST family Features ■ Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. M246 Epoxy sealed Figure 1. Pin connections 1-2 Drain 1 2 5 4 3 Source 4-5 Gate Table 1. Device summary Order code Package Branding SD56120C M246 SD56120 September 2009 Doc ID 15742 Rev 3 1/15 www.st.com 15 Contents SD56120C Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 15742 Rev 3 SD56120C Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (TCASE = 25 °C) Symbol Value Unit V(BR)DSS Drain-source voltage 72 V VGS Gate-source voltage ± 20 V Drain current 14 A Power dissipation (@ Tc = 70 °C) 217 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 0.6 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage temperature Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Doc ID 15742 Rev 3 3/15 Electrical characteristics 2 SD56120C Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static (per section) Symbol Test conditions Min 72 Unit VGS = 0 V IDS = 1 mA IDSS VGS = 0 V VDS = 28 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 200 mA 5.0 V VDS(ON) VGS = 10 V ID = 3 A 0.7 0.8 V GFS VDS = 10 V ID = 3 A 3 mho CISS VGS = 0 V VDS = 28 V f = 1 MHz 82 pF COSS VGS = 0 V VDS = 28 V f = 1 MHz 48 pF CRSS VGS = 0 V VDS = 28 V f = 1 MHz 2.8 pF REF. 7194566A 2.2 Dynamic Table 5. V 3.0 Dynamic Symbol Test conditions Min Typ POUT VDD = 28 V IDQ = 400 mA GPS VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz 14 16 ηD VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz 50 60 IMD (1) f = 860 MHz Input overdrive (2) VDD = 28 V IDQ = 400 mA PIN = 10 W f = 860 MHz 1 PEP f1 = 860 MHz f2 = 860.1 MHz 2 Overdrive test done at wafer sampling only. Doc ID 15742 Rev 3 Max 100 VDD = 28 V IDQ = 400 mA POUT = 100 W PEP Load VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz mismatch All phase angles 4/15 Max V(BR)DSS Note: Note: Typ Unit W -28 5:1 Must survive dB - % dBC VSWR SD56120C 3 Impedances Impedances Figure 2. Current conventions Table 6. Impedance data Freq. (MHz) ZIN (Ω) ZDL(Ω) 860 MHz 1.11 - j 2.63 3.01 + j 5.34 Measured drain to drain and gate to gate respectively. Doc ID 15742 Rev 3 5/15 Typical performances SD56120C 4 Typical performances Figure 3. Capacitance vs drain voltage (per section) Figure 4. Gate-source voltage vs case temperature C (pF) VGS (NORMALIZED) 1000 1.04 f = 1 MHz per section 1.02 Id = 1 A Ciss 100 Id = 2 A Coss 1 Id = 3 A Id = 4 A Id = 5 A 10 0.98 Crss VDS = 10 V per section 0.96 1 0 10 20 30 40 -25 50 0 25 Figure 5. 50 75 100 Tc (°C) Vds (V) Drain current vs gate voltage Figure 6. Id (A) Pout (W) 6 140 Output power vs input power 120 5 100 4 80 3 60 2 40 1 VDD = 28 V IDQ = 400 mA f = 860 MHz 20 Vds = 10 V per section 0 0 2.5 3 3.5 4 4.5 5 0 Vgs (V) 6/15 1 2 Pin (W) Doc ID 15742 Rev 3 3 4 SD56120C Figure 7. Typical performances Power gain vs input power Figure 8. Pg (dB) Nd (%) 20 70 19 60 18 Efficiency vs output power 50 17 40 16 30 15 20 14 Vdd = 28 V Idq = 400 mA f = 860 MHz 13 f = 860 Mhz Vdd = 28 V Idq = 400 mA 10 0 12 0 1 2 3 4 0 20 40 60 Pin (W) Figure 9. 80 100 120 140 Pout (W) Power gain vs output power Figure 10. Intermodulation distortion vs output power Gp (dB) IMD3 (dBt) 0 22 -5 Idq = 800 mA 20 -10 -15 Idq = 1 A -20 18 -25 Idq = 400 mA 16 -30 Idq = 600 mA -35 Idq = 200 mA -40 14 -45 f1 = 860 MHz f2 = 860.1 MHz Vdd = 28 V Idq = 400 mA -50 12 -55 Vdd = 28V f = 860 MHz -60 10 0 1 10 100 1000 Pout (W) 20 10 40 30 60 50 80 70 100 90 120 110 Pout (WPEP) Doc ID 15742 Rev 3 7/15 Typical performances SD56120C Figure 11. Output power vs drain voltage Figure 12. Output power vs bias current Pout (W) Pout (W) 130 120 120 110 115 100 90 80 110 70 60 105 50 Vdd = 28 V Pin = 2.5 W f = 860 MHz Pin = 2.5 W Idq= 400 mA f = 860 MHz 40 30 100 12 16 20 24 28 32 36 0 Vds (V) Pout (W) 140 120 100 80 60 40 Vdd = 28 V Pin = 2.5 W f = 860 MHz 20 0 0.5 1 1.5 2 2.5 3 3.5 Vgs (V) 8/15 0.4 0.6 0.8 1 Idq (A) Figure 13. Output power vs gate-source voltage 0 0.2 Doc ID 15742 Rev 3 1.2 1.4 1.6 1.8 2 SD56120C 5 Test circuit Test circuit Figure 14. 860 MHz test circuit schematic DIMENSION TABLE TL1 Z9 Z5 Z3 Z1 Z11 Z7 Z6 Z2 DIM IN MM WXL WXL Z1,Z12 0.215 X TYP 5,46 X TYP Z2,Z3 0.215 X 0.850 5,46 X 21,59 Z4,Z5 0.344 X 1.000 8,73 X 25,40 Z6,Z7 0.344 X 0.440 8,73 X 11,17 Z8,Z9 0.700 X 0.870 17,78 X 22,10 Z10,Z11 0.215 X 0.670 5,46 X 17,02 TL1 & TL2 0.100 X 2.37 2,54 X 60,20 DIMENSION OF MCROSTRIP = 1/2 PRINTED BALUN ONLY. Z12 Z10 Z4 Z8 TL2 TRANSMISSON LINE DIMENSIONS VGG R1 C16 R2 C28 C29 C21 C22 C6 R7 BALUN1 RF INPUT C2 C4 C3 C1 R1 D.U.T. C9 C8 R4 + C17 R5 C31 C10 C11 C7 C18 BALUN2 RF OUTPUT C14 L2 C27 C30 C13 C15 R6 VGG C19 C12 C5 R8 C20 L1 R3 Note: VDD FB1 + VDD FB2 C26 C25 C24 C23 1 Dimensions at component symbols are reference for component placement. 2 Gap between ground & transmission line = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] typ. Doc ID 15742 Rev 3 9/15 Test circuit SD56120C Table 7. 860 MHz test circuit component part list Component C32 Description 0.6 - 4.5 pF variable capacitor C31, C28 0.01 µF ATC 200B surface-mount ceramic chip capacitor C29, C30 62 pF ATC 100B surface-mount ceramic chip capacitor C27, C22 270 pF ATC 100B surface-mount ceramic chip capacitor C26, C21 1200 pF ATC 700B surface-mount ceramic chip capacitor C25 ,C20 0.1 µF 500V surface-mount ceramic chip capacitor C24, C19, C17, C16 10 µF 50V aluminum electrolytic radial lead surface-mount capacitor C23, C18 100 µF 63V aluminum electrolytic radial lead capacitor C15, C14, C13, C12 47 pF ATC 100B surface-mount ceramic chip capacitor C11 0.8 - 8 pF Gigatrim variable capacitor C10 3.0 pF ATC 100B surface-mount ceramic chip capacitoR C9, C8 4.3 pF ATC 100B surface-mount ceramic chip capacitor C7, C6, C5 10 pF ATC 100B surface-mount ceramic chip capacitor C4 2.0 pF ATC 100B surface-mount ceramic chip capacitor C3, C2 20 pF ATC 100B surface-mount ceramic chip capacitor C1 1.3 pF ATC 100B surface-mount ceramic chip capacitor R7, R8 100 Ohm 1/4 W surface-mount chip resistor R6, R3 22 Ohm 1/4 W carbon leaded resistor R5, R2 4.7 Ohm 1/4 W carbon leaded resistor R4, R1 82 Ohm 1/4 W carbon leaded resistor B2, B1 Balun, 50 Ohm Sucoform, OD 0.141 2.37 LG coaxial cable or equivalent L2, L1 Inductor, 6 Turn Air-wound #18AWG ID=0.130[3,30] magnet wire FB2, FB1 PCB 10/15 Surface-mount EMI shield bead Ultralam 2000. 0.030” thk εr = 2.55, 2 Oz ED Cu both sides Doc ID 15742 Rev 3 SD56120C Test circuit Figure 15. 860 MHz production test fixture + + + 4 inches Figure 16. 860 MHz test circuit photomaster 6.4 inches Doc ID 15742 Rev 3 11/15 Package mechanical data 6 SD56120C Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 12/15 Doc ID 15742 Rev 3 SD56120C Package mechanical data Table 8. M246 (.230 x .650 WIDE 4/L BAL N/HERM W/FLG) mechanical data Dim. mm. Min Typ Inch Max Min Typ Max A 5.33 5.59 .210 .220 B 6.48 6.73 .255 .265 C 17.27 18.29 .680 .720 D 5.72 5.97 .225 .235 E 22.86 .900 F 28.83 29.08 1.135 1.145 G 16.26 16.76 .640 .660 H 4.19 5.08 .165 .200 I 0.08 0.15 .003 .006 J 1.83 2.24 .072 .088 K 1.40 1.65 .055 .065 L 3.18 3.43 .125 .135 Figure 17. Package dimensions Controlling dimension: Inches Doc ID 15742 Rev 3 Ref. 7145054A 13/15 Revision history 7 SD56120C Revision history Table 9. 14/15 Document revision history Date Revision Changes 25-May-2009 1 Initial release 15-Jul-2009 2 Added note (2) on table 5 01-Sep-2009 3 Updated document’s title Doc ID 15742 Rev 3 SD56120C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 15742 Rev 3 15/15