SD57030-01

® SD57030-01 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 13 dB gain @ 945 MHz BeO FREE PACKAGE s s s s DESCRIPTION The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base stations applications requiring high linearity. M250 epoxy sealed ORDER CODE BRANDING SD57030-01 XSD57030-01 PIN CONNECTION 1. Drain 2. Gate 3.Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc= 70 C) Max. O perating Junction Temperature Storage T emperature o Value 65 ± 20 4 74 200 -65 to 150 Uni t V V A W o o C C THERMAL DATA R th (j-c) Junction-Case Thermal Resistance 1.75 o C/W January 2000 1/7 SD57030-01 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 10 mA V DS = 28 V VDS = 0 V ID = 50 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.0 1.3 1.8 58 34 2.4 Min. 65 1 1 5.0 Typ . Max. Un it V µA µA V V mho pF pF pF DYNAMIC Symb ol P OUT G PS ηD V DD = 28V V DD = 28 V V DD = 28 V Parameter f = 945 MHz P out = 30 W P out = 30 W I DQ = 50 mA IDQ = 50 mA IDQ = 50 mA P out = 30 W I DQ = 50 mA Min. 30 13 50 10:1 14 60 Typ . Max. Un it W dB % VSW R Load f = 945 MHz V DD = 28 V Mismatch ALL PHASE ANGLES 2/7 SD57030-01 TYPICAL PERFORMANCE (CW) Output Power vs Input Power Power Gain and Efficiency vs Output Power Output Power vs Supply Voltage Output Power vs Gate Source Voltage 3/7 SD57030-01 945 MHz Test Circuit Schematic VG G+ + + + VD D RF IN RF OUT 945 MHz Test Circuit Component Part List 4/7 SD57030-01 945 MHz Test Circuit Photomaster 945 MHz Test Fixture 5/7 SD57030-01 M250 (.230 x .360 WIDE 2/L N/HERM PILL) MECHANICAL DATA mm MIN. A B C D E F G H I 5.21 2.16 5.59 8.89 9.40 0.11 0.89 1.45 2.67 TYP. MAX. 5.71 2.92 6.09 9.40 9.91 0.15 1.14 1.70 3.94 MIN. 0.205 0.085 0.220 0.350 0.370 0.004 0.035 0.057 0.105 inch TYP. MAX. 0.225 0.115 0.240 0.370 0.390 0.006 0.045 0.067 0.155 DIM. Controlling Dimension: Inches 6/7 1022729B SD57030-01 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7