SGSD100

SGSD100 SGSD200 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: GENERAL PURPOSE SWITCHING APPLICATION s GENERAL PURPOSE AMPLIFIERS s 3 2 1 DESCRIPTION The SGSD100 is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in TO-218 plastic package. It is inteded for use in general purpose and high current amplifier applications. The complementary PNP type is the SGSD200. TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC I CM IB I BM P tot T st g Tj Collector-Base Volta ge (I E = 0) Collector-Emitte r Voltage (I B = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value SGSD100 SGSD200 80 80 25 40 6 10 130 -65 to 150 150 V V A A A A W o o Unit C C For PNP types voltage and current values are negative. September 1997 1/6 SGSD100/SGSD200 THERMAL DATA R thj-ca se Thermal Resistance Junction-case o Max 0.96 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol ICBO ICEV ICEO I EBO Parameter Collecto r Cut-of f Current (I E = 0) Collecto r Cut-of f Current (VBE = -0.3V) Collecto r Cut-of f Current (I B = 0) Test Conditions VCE = 80 V VCE = 80 V VCE = 80 V VCE = 80 V VCE = 60 V VCE = 60 V T c = 100 o C T c = 100 o C T c = 100 o C Min. Typ. Max. 0. 5 1. 5 0. 1 2 0. 5 1. 5 2 80 IB IB IB IB IB IB = 20 = 20 = 40 = 40 = 80 = 80 mA mA mA mA mA mA 0.95 0.8 1.2 1.3 2 2.3 2.6 2.5 1 600 T c = 100 o C 500 T c = 100 o C T c = 100 o C 300 1.8 1.6 5000 8000 4000 8000 2000 2000 1.2 0.85 1.6 1.4 2.3 1.3 Tc = 100 o C 250 250 6 1. 2 1.75 3. 5 3. 3 3 150 00 120 00 6000 V V V V V V mJ mJ A Unit mA mA mA mA mA mA mA V V V V V V V V V V V Emitter Cut-off Current VEB = 5 V (I C = 0) I C = 50 mA IC IC IC IC IC IC = = = = = = 5A 5A 10 A 10 A 20 A 20 A V CEO(su s)∗ Collecto r-Emitter Sustaining Voltage V CE(sat )∗ Collecto r-Emitter Saturation Voltage T c = 100 o C Tc = 100 o C Tc = 100 o C Tc = 100 o C T c = 100 o C VBE( sat) ∗ VBE ∗ hFE ∗ Base-Emitter Saturation Voltage Base-Emitter Volta ge DC Current Gain I C = 20 A I C = 20 A I C = 10 A I C = 10 A IC IC IC IC IC IC = = = = = = = = = = = = 5A 5A 10 A 10 A 20 A 20 A 5A 5A 10 A 10 A 20 A 20 A IB = 80 mA IB = 80 mA VCE = 3 V VCE = 3 V VCE VCE VCE VCE VCE VCE = = = = = = 3 3 3 3 3 3 V V V V V V VF ∗ Diode Forward Voltage I F IF IF IF IF IF Second Breakdown Energy Second Breakdown Current T c = 100 o C T c = 100 o C T c = 100 o C Es/ b I s/b VCC = 30 V L = 3 mH VCC = 30 V L = 3 mH VCE = 25 V t = 500 ms ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative. 2/6 SGSD100/SGSD200 Safe Operating Areas DC Current Gain (NPN type) DC Current Gain (PNP type) DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage (NPN type) 3/6 SGSD100/SGSD200 Collector-Emitter Saturation Voltage (PNP type) 4/6 SGSD100/SGSD200 TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E F G H L2 L3 L5 L6 R Ø – 4 3.95 31 12.2 4.1 – 0.157 0.5 1.1 10.8 14.7 – 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 – 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054 DIM. A C L5 L3 L2 L6 D E H ¯ F R 1 2 3 P025A G 5/6 SGSD100/SGSD200 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A . .. 6/6