SGSIF344

SGSIF344 SGSIF444 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s SGSIF344 IS SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: s SWITCH MODE POWER SUPPLIES s HORIZONTAL DEFLECTION FOR COLOUR TVS AND MONITORS DESCRIPTION The SGSIF344 and SGSIF444 are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. These transistors are available in ISOWATT220 and ISOWATT218 plastic package respectively. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. 3 1 2 1 3 2 ISOWATT220 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V CEO VEBO IC I CM IB I BM P tot T s tg Tj June 1997 Parameter SGSIF344 Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) o T otal Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction T emperature 1200 600 7 7 12 5 8 40 -65 to 150 150 50 Valu e SGSIF 444 V V V A A A A W o o Un it C C 1/7 SGSIF344 / SGSIF444 THERMAL DATA ISOW AT T220 ISOW AT T218 R t hj-ca se Thermal Resistance Junction-case Max 3.12 2.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1200 V V EC = 380 V V EC = 600 V V BE = 7 V I C = 100 mA I C = 3.5 A I C = 2.5 A I C = 3.5 A I C = 2.5 A IB = 0.7 A IB = 0.35 A IB = 0.7 A IB = 0.35 A 0.7 2.2 0.18 0.7 1.5 0.2 0.7 1 0.2 1.4 0.1 2.8 0.2 600 1.5 1.5 1.5 1.5 1.2 3.5 0.4 Min. Typ . Max. 200 200 2 1 Un it µA µA mA mA V V V V V µs µs µs µs µs µs µs µs µs µs µs V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ V BE(s at)∗ t ON ts tf t ON ts tf t ON ts tf ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn-on T ime Storage Time Fall T ime Turn-on T ime Storage Time Fall T ime Turn-on T ime Storage Time Fall T ime Storage Time Fall T ime RESISTIVE LO AD IC = 3.5 A v CC = 250 v I B1 = 0.7 A I B1 = -1.4 A RESISTIVE LO AD IC = 3.5 A v CC = 250 v I B1 = -1.4 A I B1 = 0.7 A With Antisaturation Network RESISTIVE LO AD IC = 3.5 A V CC = 250 V V BE (off) = - 5 V I B1 = 0.7 A INDUCTIVE LOAD hFE = 5 I C = 3.5 A V CL = 450 V V BE(off ) = -5 V L = 300 µ H R BB = 1.2 Ω INDUCTIVE LOAD hFE = 5 I C = 3.5 A V CL = 450 V V BE(off ) = -5 V L = 300 µ H R BB = 1.2 Ω T c = 100 oC ts tf Storage Time Fall T ime 4 0.3 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 SGSIF344 / SGSIF444 Safe Operating Area Reverse Biased SOA Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 SGSIF344 / SGSIF444 Resistive Load Switching Times Inductive Load Switching Times Switching Times Percentance Variation 4/7 SGSIF344 / SGSIF444 ISOWATT220 MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 ¯ F D G1 E H F2 123 L2 L4 P011G G 5/7 SGSIF344 / SGSIF444 ISOWATT218 MECHANICAL DATA DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090 L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D P025C 6/7 SGSIF344 / SGSIF444 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7