SGSIF344FP

® SGSIF344FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: s SWITCH MODE POWER SUPPLIES s HORIZONTAL DEFLECTION FOR COLOUR TVS AND MONITORS DESCRIPTION The device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. It is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. TO-220FP 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V CEO VEBO IC I CM IB I BM P tot T s tg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) T otal Dissipation at Tc = 25 o C Storage Temperature Max. Operating Junction T emperature Valu e 1200 600 7 7 12 5 8 40 -65 to 150 150 Un it V V V A A A A W o C o C February 1999 1/6 SGSIF344FP THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 3.12 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1200 V V EC = 380 V V EC = 600 V V BE = 7 V I C = 100 mA I C = 3.5 A I C = 2.5 A I C = 3.5 A I C = 2.5 A V CC = 250 V I B1 = 0.7 A IB = 0.7 A IB = 0.35 A IB = 0.7 A IB = 0.35 A IC = 3.5 A I B1 = -1.4 A 0.7 2.2 0.18 0.7 1.5 0.2 0.7 1 0.2 1.4 0.1 2.8 0.2 4 0.3 600 1.5 1.5 1.5 1.5 1.2 3.5 0.4 Min. Typ . Max. 200 200 2 1 Un it µA µA mA mA V V V V V µs µs µs µs µs µs µs µs µs µs µs µs µs V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ V BE(s at)∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage RESISTIVE LO AD Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD Turn-on T ime Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime t on ts tf t on ts tf t on ts tf ts tf ts tf V CC = 250 V IC = 3.5 A I B1 = -1.4 A I B1 = 0.7 A With Antisaturation Network V CC = 250 V I B1 = 0.7 A IC = 3.5 A V BE(o ff ) = - 5 V I C = 3.5 A V CLAMP = 450 V L = 300 µ H I C = 3.5 A V CLAMP = 450 V L = 300 µ H T c = 100 oC hFE = 5 VBE(of f) = -5 V R BB = 1.2 Ω hFE = 5 VBE(of f) = -5 V R BB = 1.2 Ω ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 SGSIF344FP Safe Operating Area Reverse Biased SOA Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/6 SGSIF344FP Resistive Load Switching Times Inductive Load Switching Times Switching Times Percentance Variation 4/6 SGSIF344FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 ¯ F D G1 E H F2 123 L2 L4 G 5/6 SGSIF344FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6