SM2T27A

SM2T27A

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    SM2T27A - Transient Voltage Suppressor: TRANSIL ™ - STMicroelectronics

  • 详情介绍
  • 数据手册
  • 价格&库存
SM2T27A 数据手册
® SM2T series Transient Voltage Suppressor: TRANSIL ™ FEATURES AND BENEFITS s s s s s s High Peak pulse power: 200 W (10/1000 µs ) 1000 W ( 8/20 µs) Stand-off voltage range 5 to 24V Unidirectional types Low clamping factor VCL/VBR Fast response time 1.0mm overall component height A K DESCRIPTION The SM2T series are Transil diodes designed specifically for portable equipment and miniaturized electronics devices subject to ESD transient overvoltages. Fully compatible with pick and place equipment and inspectable soldering joints. DO-216AA (ST mite) ABSOLUTE RATINGS (Tamb = 25°C) Symbol PPP P IFSM Tstg Tj TL Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinitive heatsink Non repetitive surge peak forward current Storage temperature range Maximum operating junction temperature Lead solder temperature (10 seconds duration) Tj initial = Tamb Tamb = 100°C tp = 10 ms Tj initial = Tamb Value 200 2.5 25 - 65 to + 175 150 260 Unit W W A °C °C Note 1: 10/1000 µs pulse waveform. THERMAL RESISTANCES Symbol Rth (j-t) Rth (j-a) Junction to tab Junction to ambient on PCB with recommended pad layout Parameter Value 20 250 Unit °C/W °C/W April 2002 - Ed: 1A 1/5 SM2T series ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient VCL VBR V RM IF I VF I RM V αT I PP Types SM2T6V8A SM2T14A SM2T18A SM2T27A IRM max @ VRM 50µA 1µA 1µA 1µA 5V 12V 16V 24V VBR min @ IR 6.4V 13.3V 17.1V 25.7V 10 mA 1 mA 1 mA 1 mA VCL max @ IPP Note 1 9.2V 19.9V 26V 38.9V 19.6A 9.0A 7A 4.6A T max 10-4/°C 5.7 8.3 8.8 9.6 C typ at 0V 1600pF 650pF 500pF 350pF Note 1: 10/1000µs pulse waveform. Fig. 1: Peak pulse power versus exponential pulse duration. PPP(W) 1.E+04 Tj initial = 25°C Fig. 2: Relative variation of peak pulse power versus initial junction temperature. % 110 100 90 80 1.E+03 70 60 50 40 1.E+02 30 20 tP(ms) 1.E+01 0.01 0.10 1.00 10.00 10 0 0 25 50 75 Tj(°C) 100 125 150 175 2/5 SM2T series Fig. 3: Average power dissipation versus ambient temperature. P(W) 3.0 Tamb = Ttab Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)(°C/W) 1000.0 S=0.135cm² 2.5 100.0 2.0 S=2cm² 1.5 10.0 1.0 Printed circuit board FR4, recommended pad layout 1.0 0.5 Tamb(°C) 0.0 0 25 50 75 100 125 150 tP(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Fig. 5: Thermal resistance junction to ambient versus copper surface under tab. Rth(j-a)(°C/W) 250 Fig. 6: Reverse leakage current versus junction temperature (typical values). IR(nA) 1.E+02 VR=VRM 200 1.E+01 150 1.E+00 100 1.E-01 50 S(cm²) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 1.E-02 0 25 50 Tj(°C) 75 100 125 150 Fig. 7: Clamping voltage versus peak pulse current (maximum values). IPP(A) 100.0 8/20µs Tj initial =25°C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 10000 F=1MHz Vosc=30mVRMS Tj=25°C 10/1000µs 10.0 1000 SM2T6V8A SM2T6V8A SM2T14A SM2T18A 1.0 SM2T14A 100 SM2T27A SM2T18A SM2T27A VCL(V) 10 VR(V) 45 1 10 100 0.1 0 5 10 15 20 25 30 35 40 3/5 SM2T series Fig. 9: Forward voltage drop versus forward current (typical values). IFM(A) 1.E+02 1.E+01 Tj=150°C 1.E+00 Tj=25°C 1.E-01 VFM(V) 1.E-02 0.0 0.5 1.0 1.5 2.0 2.5 3.0 PACKAGE MECHANICAL DATA DO216-AA (ST mite) DIMENSIONS REF. Min. L3 D Millimeters Typ. 1.00 Max. 1.15 0.10 0.40 0.70 0.10 1.75 1.75 3.60 0.50 1.20 1.90 1.90 3.75 0.63 1.35 0.50 ref 0.07 0.07 0.003 0.003 0.65 1.00 0.25 2.05 2.05 3.90 0.80 1.50 0.016 0.027 0.004 0.069 0.069 0.142 0.047 0.047 Min. 0.033 Inches Typ. 0.039 Max. 0.045 0.004 0.025 0.039 0.010 0.007 0.007 0.148 0.025 0.053 0.019 ref 0.081 0.081 0.154 0.031 0.059 A A1 0.85 b2 b b b2 H c L2 L R E D E H C A1 R1 0° to 6° A L L2 L3 Note: The anode is connected to the longer tab The cathode is connected to the shorter tab (heatsink) R R1 RECOMMENDED LAYOUT 2.67 0.762 2.54 1.27 0.635 4/5 SM2T series OTHER INFORMATION Ordering type SM2T6V8A SM2T14A SM2T18A SM2T27A Marking MUA MUE MUG MUJ Package ST mite ST mite ST mite ST mite Weight 15.5 mg 15.5 mg 15.5 mg 15.5 mg Base qty 12000 12000 12000 12000 Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5
SM2T27A
### 物料型号 - SM2T6V8A - SM2T14A - SM2T18A - SM2T27A

### 器件简介 SM2T系列瞬态电压抑制器(TVS)是专为便携设备和小型电子设备设计的,这些设备可能会受到ESD(静电放电)瞬态过电压的影响。这些器件完全兼容拾放设备,并可检查焊接接头。

### 引脚分配 - 阳极连接到较长的引脚 - 阴极连接到较短的引脚(散热器)

### 参数特性 - 峰值脉冲功率耗散(Ppp):200W(10/1000μs脉冲波形) - 无限散热片上的功率耗散(P):2.5W(环境温度Tamb=100°C) - 单向瞬态电压抑制二极管(IFSM):25A(tp=10ms,Tj初始=环境温度) - 存储温度范围(Tstg Tj):-65至+175℃ - 引线焊接温度(TL):260℃(持续10秒)

### 功能详解 SM2T系列瞬态电压抑制器具有高峰值脉冲功率、低钳位因子、快速响应时间以及1.0mm的整体组件高度。它们适用于5至24V的隔离电压范围。

### 应用信息 这些瞬态电压抑制器适用于需要保护免受静电放电影响的便携式设备和小型电子设备。

### 封装信息 - 封装类型:DO-216AA(SMite) - 机械尺寸数据以毫米和英寸提供,包括最小值、典型值和最大值。
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