SMA540B

SMA540B Active Biased RF Transistor PRELIMINARY DATA • HIGH GAIN LOW NOISE AMPLIFIERS Gms = 19 dB at 1.8 GHz • CURRENT EASY ADJUSTABLE BY AN EXTERNAL RESISTOR • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V • TRANSITION FREQUENCY 42 GHz • ULTRA MINIATURE SOT323-4L PACKAGE (LEAD FREE) APPLICATIONS • WIDEBAND APPLICATIONS • CELLULAR AND CORDLESS TELEPHONES • HIGH FREQUENCY OSCILLATORS Bias Bias, 4 C, 3 SOT323-4L (SC70) ORDER CODE SMA540BTR BRANDING TBD DESCRIPTION The SMA540B is a NPN Transistor integrating a current mirror as biasing. In this way the IC (collector current) can be controlled setting the current at Bias pin according to IC = 10 * IBIAS. The IBIAS current is easy adjustable using an external resistor. SMA540B is housed in ultra miniature SOT323-4L package(LEAD FREE), the relative dimensions are 1.15mmx1.8mm with 0.8mm thickness. ABSOLUTE MAXIMUM RATINGS Symbol Vceo Vebo Ic Ib IBIAS Ptot Top Tstg Tj Collector emitter voltage Emitter base voltage Collector current Base current BIAS Current Total dissipation, Ts = 107 Operating temperature Storage temperature Max. operating junction temperature oC B, 1 E, 2 Parameter Value 4.5 1.5 40 4 4 120 -40 to +85 -65 to +150 150 Unit V V mA mA mA mW oC oC o C THERMAL RESISTANCE Rthjs Thermal Resistance Junction soldering point < 270 oC/W January, 15 2003 1/4 SMA540B ELECTRICAL CHARACTERISTICS (TA=25 oC,ZL/S = 50Ω, tested in circuit shown in fig.1, unless otherwise specified ) Symbol Gms (1) 2 Parameter Maximum stable gain Insertion power gain Noise Figure Output Power at 1dB Compression Point Ouput third order intercept point Collector-base capacitance Current Ratio (Ic/IBias) Test Conditions Vd = 2V, Ic = 20mA Vd = 2V, Ic = 20mA Vd = 2V, Ic = 5mA, Zs = 50Ω Vd = 2V, Ic = 20mA, Vd = 2V, Ic = 20mA Vcb = 2V, f = 1MHz IBias = 0.5mA, Vd = 2V f = 1.8GHz f = 1.8GHz f = 1.8GHz f = 1.8GHz f = 1.8GHz Min. Typ. 19 17.5 1.3 9 19 0.13 10 Max. Unit dB dB dB dBm dBm pF |S21| F50Ω P-1dB OIP3 CCB CR Note(1): Gms = | S21 / S12 | PIN CONNECTION 4 3 Pin No. 1 Description BASE EMITTER COLLECTOR BIAS Top view 1 2 SOT343 SOT343 2 3 4 Typical configuration (Fig. 1) VD ID RF Out RBias Bias-T IC C, 3 IBias Bias, 4 Bias B, 1 RF In N.C. E, 2 Bias-T 2/4 SMA540B PACKAGE DIMENSIONS SOT323-4L (SC-70 4 leads) 1.30 1.15-1.35 2.00-2.20 1.15 0.55-0.65 1.90-2.10 1.15-1.35 0.80-1.00 0.45 0.10-0.20 0.25-0.35 0.00-0.10 3/4 SMA540B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http ://www.st.com 4/4