SMBJ70CA-TR

® SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR TRANSILTM FEATURES PEAK PULSE POWER : 600 W (10/1000µs) STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME JEDEC REGISTERED PACKAGE OUTLINE DESCRIPTION The SMBJ series are TRANSILTM diodesdesigned specifically for protecting sensitive equipment against transient overvoltages. Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s. SMB (JEDEC DO-214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol PPP P IFSM Tstg Tj TL Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s. Tj initial = Tamb Tamb = 50°C tp = 10ms Tj initial = Tamb Value 600 5 100 - 65 to + 175 150 260 Unit W W A °C °C °C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit on recommended pad layout Parameter Value 20 100 Unit °C/W °C/W January 1998 Ed: 3 1/6 SMBJxxxA-TR, CA-TR ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Forward voltage drop IRM @ VRM Types Unidirectional SMBJ5.0A-TR SMBJ6.0A-TR SMBJ6.5A-TR SMBJ8.5A-TR SMBJ10A-TR SMBJ12A-TR SMBJ13A-TR SMBJ15A-TR SMBJ18A-TR SMBJ20A-TR SMBJ22A-TR SMBJ24A-TR SMBJ26A-TR SMBJ28A-TR SMBJ30A-TR SMBJ33A-TR SMBJ40A-TR SMBJ48A-TR SMBJ58A-TR SMBJ70A-TR SMBJ85A-TR SMBJ100A-TR SMBJ130A-TR SMBJ154A-TR SMBJ170A-TR SMBJ188A-TR Mark. BUZ BUA BUB BUC BUD BUE BUF BUG BUH BUI BVA BUJ BUK BUL BUM BUN CUJ BUW BUO CUM BUQ CUQ BUS BUT BUU BUV max. V 5.0 6.0 6.5 8.5 10 12 13 15 18 20 22 24 26 28 30 33 40 48 58 70 85 100 130 154 170 188 VBR @ IR VCL @ IPP I PP VCL VBR V RM VF I RM V IF I αT VF VCL @ IPP αT C typ. note4 pF 4000 3850 3700 2800 2300 2025 1900 1600 1350 1250 1150 1112 1075 1000 950 900 800 700 625 550 500 450 400 360 350 330 Bidirectional Mark. µA SMBJ5.0CA-TR BBZ 800 SMBJ6.0CA-TR BBA 800 SMBJ6.5CA-TR BBB 500 SMBJ8.5CA-TR BBC 5 SMBJ10CA-TR BBD 5 SMBJ12CA-TR BBE 5 SMBJ13AC-TR BBF 1 SMBJ15CA-TR BBG 1 SMBJ18CA-TR BBH 1 SMBJ20CA-TR BBI 1 SMBJ22CA-TR CBH 1 SMBJ24CA-TR BBJ 1 SMBJ26CA-TR BBK 1 SMBJ28CA-TR BBL 1 SMBJ30CA-TR BBM 1 SMBJ33CA-TR BBN 1 SMBJ40CA-TR CBJ 1 SMBJ48CA-TR BBW 1 SMBJ58CA-TR BBO 1 SMBJ70CA-TR CBM 1 SMBJ85CA-TR BBQ 1 SMBJ100CA-TR CBQ 1 SMBJ130CA-TR BBS 1 SMBJ154CA-TR BBT 1 SMBJ170CA-TR BBU 1 SMBJ188CA-TR BBV 1 min. max. max. max. note2 10/1000µs 8/20µs note3 V mA V A V A 10-4/°C 6.4 10 9.2 68 13.4 298 5.7 6.7 10 10.3 61 13.7 290 5.9 7.2 10 11.2 56 14.5 276 6.1 9.4 1 14.4 41.7 19.5 205 7.3 11.1 1 17 37 21.7 184 7.8 13.3 1 19.9 31 25.3 157 8.3 14.4 1 21.5 29 27.2 147 8.4 16.7 1 24.4 25.1 32.5 123 8.8 20 1 29.2 21.5 39.3 102 9.2 22.2 1 32.4 19.4 42.8 93 9.4 24.4 1 35.5 17.7 48.3 83 9.6 26.7 1 38.9 16 50 80 9.6 28.9 1 42.1 14.9 53.5 75 9.7 31.1 1 45.4 13.8 59 68 9.8 33.3 1 48.4 13 64.3 62 9.9 36.7 1 53.3 11.8 69.7 57 10.0 44.4 1 64.5 9.7 84 48 10.1 53.3 1 77.4 8.1 100 40 10.3 64.4 1 93.6 6.7 121 33 10.4 77.8 1 113 5.5 146 27 10.5 94.4 1 137 4.6 178 22.5 10.6 111 1 162 3.8 212 19 10.7 144 1 209 3 265 15 10.8 171 1 246 2.4 317 12.6 10.8 189 1 275 2.2 353 11.3 10.8 209 1 328 2 388 10.3 10.8 % I PP 100 10 s Note 2 : Pulse test : tp < 50 ms. Note 3 : ∆VBR = α T * (Tamb - 25) * VBR(25°C). Note 4 : VR = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2. PULSE WAVEFORM 10/1 000 s 50 0 1000 s t 2/6 ® SMBJxxxA-TR, CA-TR Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board). Fig. 2 : Peak pulse power versus exponential pulse duration. 3/6 ® SMBJxxxA-TR, CA-TR Fig. 3 : Clamping voltage versus peak pulse current. Exponentialwaveform tp = 20 µs ________ tp = 1 ms ------------tp = 10 ms ............... SMBJ188A SMBJ130A SMBJ58A SMBJ33A SMBJ18A SMBJ8.5A SMBJ5.0A Note : The curves of the figure 3 are specified for a junction temperature of 25 °C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : ∆VBR = αT * [Tamb -25] * VBR(25°C) For intermediate voltages, extrapolate the given results. Fig. 4a : Capacitance versus reverse applied voltage for unidirectional types (typical values). C (pF) 10000 Tj = 25°C F= 1 MHz Fig. 4b : Capacitance versus reverse applied voltage for bidirectional types (typical values). C (pF) 10000 Tj = 25°C F= 1 MHz SMBJ 5 .0A SMBJ5.0 A 1000 SMBJ13A SMBJ26A SMBJ58A SMBJ188A 100 V R (V) V R (V) 1000 SMBJ13 A SMBJ2 6A SMBJ58 A SMBJ18 8A 100 10 1 10 100 500 10 1 10 100 500 4/6 ® SMBJxxxA-TR, CA-TR Fig. 5 : Peak forward voltage drop versus peak forward current (typical values for unidirectional types). Fig. 6 : Transient thermal impedance junctionambient versus pulse duration. Mounting on FR4 PC Board with Recommended pad layout. Fig. 7 : Relative variation of leakage current versus junction temperature. ORDER CODE SM B SURFACE MOUNT 600 WATTS J 85 C A - TR TAPE & REEL BIDIRECTIONAL No suffix : Unidirectional STAND OFF VOLTAGE 5/6 ® SMBJxxxA-TR, CA-TR MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). PACKAGE MECHANICAL DATA SMB (Plastic) E1 DIMENSIONS REF. D Millimeters Min. Typ. Max. Min. 2.15 0.15 Inches Typ. Max. A1 A2 E c A1 A2 L b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 2.45 0.075 0.085 0.096 0.20 0.002 0.006 0.008 2.20 0.077 0.41 0.006 0.087 0.016 b c E E1 D L 5.40 4.30 3.60 1.15 5.60 0.201 0.213 0.220 4.60 0.159 0.169 0.181 3.95 0.130 0.142 0.156 1.60 0.030 0.045 0.063 FOOTPRINT DIMENSIONS (Millimeter) SMD Plastic. 2.3 1.52 2.75 1.52 Packaging : standard packaging is in tape and reel. Weight : 0.12 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Micr oelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in lif esupport devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 ®