SMBYT01-400

® SMBYT01 FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SURFACE MOUNT DEVICE DESCRIPTION Single high voltage rectifier suited for Switch Mode Power Supplies and other power converters. SMB (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current Non repetitive surge peak forward current Storage and junction temperature range Tl=110°C δ = 0.5 tp=10ms sinusoidal Parameter Value 10 1 30 - 40 to + 150 - 40 to + 150 Unit A A A °C °C Symbol VRRM Parameter Repetitive peak reverse voltage Value 400 Unit V THERMAL RESISTANCE Symbol Rth (j-l) Junction-leads Parameter Value 25 Unit °C/W October 1999 - Ed: 2A 1/5 SMBYT01 STATIC ELECTRICAL CHARACTERISTICS Symbol VF * Test Conditions Tj = 25°C Tj = 100°C IF = 1 A Min. Typ. Max. 1.5 Unit V 1.05 VR = VRRM 0.1 1.4 10 0.3 µA mA IR ** Tj = 25°C Tj = 100°C Pulse test : * tp = 380 µs, δ < 2 % ** tp = 5 ms, δ < 2 % RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V Irr = 0.25A dIF/dt = -15A/µs Min. Typ. Max. 25 60 Unit ns TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance) Symbol tIRM IRM VCC = 200V Tj = 100°C Test Conditions IF = 1A Lp ≤ 0.05µH dIF/dt = -50A/µs Min. Typ. 35 1.5 Max. 50 2 Unit ns A To evaluate the conduction losses use the following equation : P = 1.1 x IF(AV) + 0.25 x IF2(RMS) Voltage (V) Marking Laser marking Logo indicates cathode 400 B4 2/5 SMBYT01 Fig. 1: Low frequency power losses versus average current. P F(av)(W) =0.1 =0.05 =0.2 =0.5 =1 Fig. 2: Peak current versus form factor. 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 35 30 25 20 T IM(A) T IM =tp/T tp P=0.5W P=1.5W P=2.5W 15 10 5 I F(av)(A) =tp/T tp 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 3: Non repetitive surge peak forward current versus overload duration. IM(A) IM t Fig. 4: Relative variation of thermal impedance junction to lead versus pulse duration. K 12 10 8 6 4 1 K = Rth(j-c) =0.5 =0.2 Zth(j-c) (tp. ) = 0 .5 Tc=25 oC 0.1 =0.1 T Single pulse Tc=75 o C 2 t(s) 0.001 0 Tc=110 oC 0.01 0.1 1 10 0.01 0.001 tp(s) =tp/T tp 0.01 0.1 1 10 Fig. 5: Voltagedrop versus forward current. (Maximum values) VFM(V) Fig. 6: Average current temperature. (duty cycle : 0.5) IF(av)(A) versus ambient 3.0 2.7 2.4 Tl=100 oC 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 0.01 1.2 1.0 0.8 0.6 Rth(j-a)=Rth(j-l) Rth(j-a)=75 o C/W 1cm2 Cu =0.5 0.4 0.2 I FM(A) =tp/T T tp Tamb(o C) 0.1 1 10 20 0.0 0 20 40 60 80 100 120 140 160 3/5 SMBYT01 Fig. 7: Recovery time versus dIF/dt. Fig. 8: Peak forward voltage versus dIF/dt. Fig. 9: Peak reverse current versus dIF/dt. Fig. 10: Recovery charge versus dIF/dt. (typical values) Fig. 11: Dynamic parameters versus junction temperature. Fig. 12: Thermal resistance junction to ambient versus copper surface under each lead. 100 Printed circuit : epoxy (e=35um) 90 80 70 60 50 40 30 20 10 Scu(cm 2 ) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Rth(j-a) 4/5 SMBYT01 PACKAGE MECHANICAL DATA SMB (Plastic) DIMENSIONS REF. E1 Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 D E A1 A1 A2 b c E E1 D L b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 C L A2 FOOTPRINT DIMENSIONS (in millimeters) SMB (Plastic) Laser marking Weight = 0.12 g. Logo indicates cathode 2.3 1.52 2.75 1.52 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5