SMBYT03-400

SMBYT03 ® FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SURFACE MOUNT DEVICE ) s ( ct u d o r P e DESCRIPTION Single high voltage rectifier ranging from 200V to 400 V suited for Switch Mode Power Supplies and other power converters. ) (s ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) t c u RMS forward current Parameter od Average forward current IFSM Non repetitive surge peak forward current Tstg Tj Storage and junction temperature range t e l o s b O Symbol VRRM SMC s b O IF(AV) r P e t e l o Parameter Repetitive peak reverse voltage Value Unit 10 A Tl=55°C δ = 0.5 3 A tp=10ms sinusoidal 60 A - 40 to + 150 - 40 to + 150 °C °C Value Unit 400 V Value Unit 20 °C/W THERMAL RESISTANCE Symbol Rth (j-l) Parameter Junction-leads October 1999 - Ed : 2C 1/5 SMBYT03 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VF * Test Conditions Tj = 25°C Min. Typ. IF = 3 A 1.05 Tj = 100°C IR ** Tj = 25°C VR = VRRM 0.2 Tj = 100°C Max. Unit 1.5 V 1.4 10 µA 0.6 mA Pulse test : * tp = 380 µs, duty cycle < 2 % ** tp = 5 ms, duty cycle < 2 % ) s ( ct RECOVERY CHARACTERISTICS Symbol Test Conditions Tj = 25°C trr Min. IF = 0.5A IR = 1A Irr = 0.25A IF = 1A VR = 30V dIF/dt = -15A/µs r P e u d o Typ. t e l o Max. Unit 25 ns 60 s b O TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance) Symbol tIRM IRM ) (s Test Conditions VCC = 200V Tj = 100°C ct IF = 3A Lp ≤ 0.05µH dIF/dt = -50A/µs du o r P To evaluate the conduction losses use the following equation : P = 1.1 x IF(AV) + 0.08 x IF2(RMS) e t e ol Voltage (V) 200 300 400 Marking C2 C3 C4 s b O Laser marking Logo indicates cathode 2/5 Min. Typ. Max. Unit 35 50 ns 1.5 2 A SMBYT03 Fig.1 : Low frequency power losses versus average current. P F(av)(W) 60 5.5 =0.1 5.0 4.5 Fig.2 : Peak current versus form factor. =0.5 =0.2 IM(A) =1 T 50 =0.05 I 4.0 40 3.5 M =tp/T tp 3.0 30 2.5 P=0.5W T 2.0 20 ) s ( ct P=1.5W 1.5 1.0 P=2.5W 10 0.5 I F(av)(A) =tp/T tp u d o 4.0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.3 : Non repetitive surge peak forward current versus overload duration. Fig.4 : Relative variation of thermal impedance junction to lead versus pulse duration. 0.0 0.0 20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 K IM(A) 18 16 )- t =0.5 14 s ( t c 12 10 Tc=25 oC 8 u d o Tc=40 o C 6 4 r P e 2 t(s) t e l o 0.01 0.1 =0.5 = 0.2 =0.1 T Single pulse Tc=55 oC 1 10 bs 3.0 s b O 0.1 Fig.5 : Voltage drop versus forward current. (Maximum values) O t e l o Zth(j-c) (tp. ) 1 K = Rth(j-c) IM 0 0.001 r P e =tp/T tp(s) 0.01 0.001 0.01 0.1 tp 1 10 Fig.6 : Average current versus ambient temperature. (duty cycle : 0.5) VFM(V) 3.5 I F(av)(A) Rth(j-a)=Rth(j-l) 2.7 =0.5 T 3.0 2.4 Tl=100 oC 2.1 2.5 1.8 2.0 1.5 1.2 1.5 0.9 1.0 =tp/T tp Rth(j-a)=65 o C/W 1cm 2 Cu 0.6 0.3 0.0 0.01 0.5 I FM(A) 0.1 1 Tamb( o C) 10 50 0.0 0 20 40 60 80 100 120 140 160 3/5 SMBYT03 Fig.7 : Recovery time versus dIF/dt. Fig.8 : Peak forward voltage versus dIF/dt. ) s ( ct Fig.9 : Peak reverse current versus dIF/dt. u d o r P e Fig.10 : Recovery charge versus dIF/dt. (typical values) t e l o ) (s s b O t c u d o r P e t e l o bs Fig.11 : Dynamic parameters versus junction temperature. O Fig.12 : Thermal resistance junction to ambient versus copper surface under each lead. 100 Rth(j-a) Printed circuit : epoxy (e=35um) 90 80 70 60 50 40 30 20 10 Scu(cm 2 ) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/5 SMBYT03 PACKAGE MECHANICAL DATA SMC DIMENSIONS REF. E1 Min. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 A1 A2 b c E E1 E2 D L D E A1 Millimeters L Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 u d o ) s ( ct r P e A2 C Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches b t e l o FOOTPRINT DIMENSIONS SMC ) (s s b O t 3.3 c u d o r P e t e l o 4.2 2.0 s b O 2.0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5