SMP100-XXX

® SMP100-xxx COMMUNICATION EQUIPMENT PROTECTION: TRISIL TM FEATURES BIDIRECTIONAL CROWBAR PROTECTION VOLTAGE RANGE : FROM 8V to 270V REPETITIVE PEAK PULSE CURRENT: IPP = 100 A (10/1000 µs) HOLDING CURRENT: IH = 150mA or 225mA LOW LEAKAGE CURRENT: IR = 2 µA max DESCRIPTION The SMP100 series are transient surge arrestors used for the protection of sensitive telecom equipment. MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes : ANALOG AND DIGITAL LINE CARDS MAIN DISTRIBUTION FRAMES TERMINALS AND TRANSMISSION EQUIPMENT GAS-TUBE REPLACEMENT BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMP100 FALLS INTO SHORT CIRCUIT,STILLENSURINGPROTECTION BOARD SPACE SAVING COMPLIES WITH THE FOLLOWING STANDARDS: ITU K20 VDE0433 VDE0878 IEC-1000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B BELLCORE TR-NWT-001089 First level BELLCORE TR-NWT-001089 Second level CNET l31-24 August 1999 - Ed : 8A SMB (JEDEC DO-214AA) SCHEMATIC DIAGRAM Peak Surge Voltage (V) 4000 4000 4000 level 4 level 4 1500 800 100 2500 1000 5000 4000 Voltage Waveform (µs) 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 9/720 2/10 10/1000 2/10 0.5/700 Current Waveform (µs) 5/310 5/310 1/20 5/310 8/20 10/160 10/560 5/320 2/10 10/1000 2/10 0.8/310 Admissible Ipp (A) 100 100 100 100 100 200 100 25 500 100 500 100 Necessary Resistor (Ω) 1/9 SMP100-xxx THERMAL RESISTANCES Symbol Rth(j-I) Rth(j-a) Junction to leads Junction to ambient on printed circuit (with standard footprint dimensions) Parameter Value 20 100 Unit °C/W °C/W ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Ipp Parameter Peak pulse current: 10/1000 µs (open circuit voltage waveform 1 kV 10/1000 µs) 5/310µs (open circuit voltage waveform 4 kV, 10/700µs) 8/20 µs (open circuit voltage waveform 4 kV 1.2/50 µs) 2/10 µs (open circuit voltage waveform 2.5kV 2/10 µs) Fail-safe mode Non repetitive surge peak on-state current One cycle Non repetitive surge peak on-state current F = 50Hz TL Tstg Tj Maximum lead temperature for soldering during 10s Storage temperature range Maximum junction temperature 8/20 µs 50Hz 60Hz 0.2s 2s Value 100 150 250 500 5 55 60 25 12 260 - 55 to + 150 150 Unit A A A A kA A A A A °C °C °C IFS ITSM Note 1: Pulse waveform 10 / 1000 µs 8 / 20 µs 5 / 310 µs 1 / 20 µs 2 / 10 µs tr = 10 µs tr = 8 µs tr = 5 µs tr = 1 µs tr = 2 µs tp = 1000 µs tp = 20 µs tp = 310 µs tp = 20 µs tp = 10 µs % IPP 100 50 0 tr tp t 2/9 SMP100-xxx ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM IRM VR IR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Continuous reverse voltage Continuous reverse current Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance STATIC PARAMETERS Type IRM @ VRM max. µA SMP100-8 SMP100LC-35 SMP100-65 SMP100-120 SMP100-140 SMP100-200 SMP100-230 SMP100-270 SMP100-140H225 SMP100-200H225 SMP100-230H225 SMP100-270H225 2 2 2 2 2 2 2 2 2 2 2 2 V 6 32 55 110 120 170 200 230 120 170 200 230 IR @ VR max. note 1 µA 50 50 50 50 50 50 50 50 50 50 50 50 V 8 35 65 120 140 200 230 270 140 200 230 270 VBO @ IBO max. note 2 V 20 55 80 160 200 265 300 350 200 265 300 350 mA 800 800 800 800 800 800 800 800 800 800 800 800 IH min. note 3 mA 50(typ) 150 150 150 150 150 150 150 225 225 225 225 C typ. note 4 pF 100 90 160 140 140 130 120 120 140 130 130 120 Note 1 : IR measured at VR guarantees VBR>VR Note 2 : Measured at 50Hz, see test circuit 1. In any case V BOmin ≥ VBR Note 3 : See functional holding current test circuit 2. Note 4 : VR=1V bias, VRMS=1V, F=1MHz. 3/9 SMP100-xxx DYNAMIC PARAMETERS Symbol Test conditions (see note 5) Type SMP100-8 SMP100LC-35 SMP100-65 SMP100-120 Test conditions 1 dV/dt = 100 V/µs, di/dt < 10 A/µs, IPP = 100 A VBO Test conditions 2 dV/dt = 1 kV/µs, di/dt < 10 A/µs, IPP = 10 A SMP100-140 SMP100-200 SMP100-230 SMP100-270 SMP100-140H225 SMP100-200H225 SMP100-230H225 SMP100-270H225 Note 5 : VBO parameters are given by a KeyTek ’System 2’ generator with PN246I module. See test circuits 3 for V BO dynamic parameters. Max. 25 55 95 200 220 285 320 370 220 285 320 370 Unit V TEST CIRCUIT 1 FOR IBO and VBO parameters: tp = 20ms Auto Transformer 220V/2A static relay. K R1 140 R2 240 220V Vout IBO measure Transformer 220V/800V 5A D.U.T V BO measure TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. 4/9 SMP100-xxx TEST CIRCUIT 2 for IH parameter. R D.U.T. VBAT = - 48 V Surge generator - VP This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs. - The D.U.T. will come back to the off-state within 50 ms max. TEST CIRCUITS 3 FOR VBO DYNAMIC PARAMETERS 100 V / µs, di/dt < 10 A / µs, Ipp = 100 A 2Ω 45 Ω 66 Ω 470 Ω 83 Ω 0.36 nF 46 µH U 10 µF KeyTek ’System 2’ generator with PN246I module 1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A 26 µH 250 Ω 12 Ω 47 Ω 46 µH U 60 µF KeyTek ’System 2’ generator with PN246I module 5/9 SMP100-xxx TYPICAL APPLICATIONS 1 - Primary protection module 3 * SMP100 Line Card MDF 2 - Line card protection - Vbat PTC R LINE A RING RELAY 220 nF Integrated SLIC LINE B PTC R 3 * SMP100 LCP1511D 3 - ISDN: U interface protection PTC 3 * SMP100 1/2 DA108S1 R3 + 5V R4 R6 Internal circuitry R5 PTC Feeder 6/9 SMP100-xxx Fig 1 : Non repetitive surge peak on-state current versus overload duration (Tj initial = 25 °C). Fig 2 : On-state voltage versus on-state current (typical values). ITSM(A) 70 60 50 40 30 20 10 0 1E-2 1E-1 t(s) 1E+0 1E+1 1E+2 1E+3 F=50Hz I T (A) 50 Tj=25°C 10 VT (V) 1 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 Fig 3 : Relative variation of holding current versus junction temperature. IH[Tj] / IH[Tj=25°C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 Fig 4 : Variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)(°CW) 100 10 Tj(°C) 40 60 80 100 120 tp(s) 1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig 5 : Relative variation of junction capacitance versus reverse voltage applied (typical values). Note : For other types than SMP100-8, the curve can be extrapolated (dotted line) C[VR]/C[VR=1V] 1.0 F=1MHz 0.5 0.2 VR (V) 0.1 1 10 100 500 7/9 SMP100-xxx MARKING Type SMP100-8 SMP100LC-35 SMP100-65 SMP100-120 SMP100-140 SMP100-200 SMP100-230 SMP100-270 SMP100-140H125 SMP100-200H225 SMP100-230H225 SMP100-270H225 Epoxy meets UL94, V0 Marking PL8 L35 P06 P12 P14 P20 P23 P27 P16 P22 P24 P29 Package SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB Weight 0.107g 0.107g 0.107g 0.107g 0.107g 0.107g 0.107g 0.107g 0.107g 0.107g 0.107g 0.107g Base qty 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 2500 Delivery mode Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel Tape & Reel ORDER CODE SMP 100 - 270 H225 SURFACE MOUNT PROTECTION IPP = 100A VOLTAGE H225 : IH = 225 mA : IH = 150mA 8/9 SMP100-xxx PACKAGE MECHANICAL DATA SMB (Plastic) DIMENSIONS E1 REF. D Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 A1 A2 b E c A1 E E1 D C L A2 b L FOOT PRINT (in millimeters) 2.3 1.52 2.75 1.52 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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