SMP50-220

® SMP50-xxx TELECOM EQUIPMENT PROTECTION: TRISIL™ FEATURES s s s s s s Bidirectional crowbar protection Voltage range from 62V to 270V Low capacitance from 15pF to 30pF typ.@ 50V Low leakage current: IR = 2µA max. Holding current: IH = 150 mA min. Repetitive peak pulse current: IPP = 50 A (10/1000 µs) SMA (JEDEC DO-214AC) MAIN APPLICATIONS Telecommunication equipment such as Analog and digital line cards (xDSL, T1/E1, ISDN...). Terminals (phone, fax, modem...) and central office equipment. s s SCHEMATIC DIAGRAM DESCRIPTION The SMP50-xxx series has been designed to protect telecommunication equipment against lightning and transient induced by AC power lines. The package / die size ratio has been optimized by using the SMA package. BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. Trisils are used to help equipment to meet various standards such as UL1950, IEC950 / CSA C22.2, UL1459 and FCC part 68. Trisils have UL94 V0 resin approved. SMA package is JEDEC registred. (Trisils are UL 497B approved - file: E136224). November 2002 - Ed: 3B 1/8 SMP50-xxx IN COMPLIANCES WITH THE FOLLOWING STANDARDS Standard GR-1089 Core First level GR-1089 Core Second level GR-1089 Core Intra-building ITU-T-K20 / K21 ITU-T-K20 (IEC61000-4-2) VDE0433 VDE0878 IEC61000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Parameter Junction to ambient with recommended footprint Junction to leads Value 120 30 Unit °C/W °C/W Peak Surge Voltage (V) 2500 1000 5000 1500 6000 1500 6000 8000 4000 2000 4000 2000 4000 4000 1500 800 1000 Voltage Waveform (µs) 2/10 10/1000 2/10 2/10 10/700 1/60 ns 10/700 1.2/50 10/700 1.2/50 10/160 10/560 9/720 Required peak current (A) 500 100 500 100 150 37.5 Current Waveform (µs) 2/10 10/1000 2/10 2/10 5/310 Minimum serial resistor to meet standard (Ω) 12 10 24 0 53 0 0 0 21.5 0 0 0 21.5 0 12.5 6.5 0 ESD contact discharge ESD air discharge 100 50 100 50 100 100 200 100 25 5/310 1/20 5/310 8/20 10/160 10/560 5/320 ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM IRM VR VBR VBO IH IBO IPP C 2/8 Parameter Stand-off voltage Leakage current at VRM Continuous reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance SMP50-xxx ABSOLUTE RATINGS (Tamb = 25°C) Symbol Parameter Repetitive peak pulse current: 10/1000 µs 8/20 µs 10/560 µs 5/310 µs 10/160 µs 1/20 µs 2/10 µs Fail safe mode: maximum current (note 1) Non repetitive surge peak on-state current (Sinusoidal) 8/20 µs t = 20ms t = 16.6ms t = 0.2s t = 2s t = 16.6ms t = 20ms 50 100 55 65 75 100 150 2.5 25 28 16 8.5 6.5 6.3 260 - 55 to + 150 150 Value Unit IPP A IFS ITSM kA A I²t TL Tstg Tj I²t value for fusing Maximum lead temperature for soldering during 10 s. Storage temperature range Maximum junction temperature A²s °C °C °C Repetitive peak pulse current tr: rise time (µs) tp: pulse duration time (µs) ex: Pulse waveform 10/1000µs tr = 10µs % IPP 100 50 0 tr tp t tp = 1000µs 3/8 SMP50-xxx ELECTRICAL PARAMETERS (Tamb = 25°C) Type IRM @ VRM max IR @ VR MAX Note 1 µA V µA V DYNAMIC VBO @ IBO max Note 2 V mA STATIC VBO @ IBO max Note 3 V mA IH min C typ. C typ. Note 4 Note 5 Note 6 mA pF pF SMP50-62 SMP50-68 SMP50-100 SMP50-120 SMP50-130 SMP50-180 SMP50-200 SMP50-220 SMP50-240 SMP50-270 Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: 56 61 90 108 2 117 162 180 198 216 243 50 62 68 100 120 130 180 200 220 240 270 85 93 135 160 173 235 262 285 300 350 800 82 90 133 160 173 240 267 293 320 360 800 150 150 150 150 150 150 150 150 150 150 30 30 20 20 20 15 15 15 15 15 50 45 40 40 35 30 30 30 30 30 IR measured at VR guarantee VBRmin ≥ VR See functional breakover voltage test circuit 1. See test circuit 2. See functional holding current test circuit 3. VR = 50V bias,VRMS = 1V, F = 1MHz. VR = 2V bias, VRMS = 1V, F = 1MHz Fig. 1: Non repetitive surge peak on-state current versus overload duration (Tj initial = 25°C) ITSM(A) 40 30 20 F=50Hz Fig. 2: On-state voltage versus on-state current (typical values). IT(A) 50 Tj=25°C 20 10 5 10 2 t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 VT(V) 1 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 4/8 SMP50-xxx Fig. 3: Relative variation of holding current versus junction temperature. IH[Tj] / IH[Tj=25°C] 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 1.08 1.06 1.04 1.02 1.00 0.98 Fig. 4: Relative variation of breakover voltage versus junction temperature. VBO[Tj] / VBO[Tj=25°C] Tj(°C) -20 0 20 40 60 80 100 120 0.96 0.94 -40 -20 0 20 Tj(°C) 40 60 80 100 120 Fig. 5: Relative variation of leakage current versus junction temperature (typical values). IRM[Tj] / IRM[Tj=25°C] 2000 1000 VR=VRM Fig. 6: Relative variation of thermal impedance versus pulse duration. Zth(j-a)(°C/W) 200 Zth(j-a) 100 100 10 10 Tj(°C) 1 25 50 75 100 125 tp (s) 1 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 7: Relative variation of junction capacitance versus reverse voltage applied (typical values). C [VR] / C [VR=50V] 2.5 2.0 1.5 1.0 0.5 VR(V) 0.0 1 2 5 10 20 50 100 300 Tj=25°C F=1MHz VRMS=1V 5/8 SMP50-xxx TEST CIRCUIT 1 FOR DYNAMIC IBO and VBO PARAMETERS 100 V / µs, di/dt < 10 A / µs, Ipp = 50A 2Ω 45 Ω 66 Ω 470 Ω 83 Ω 0.36 nF 46 µH U 10 µF Key Tek ‘System 2’ generator with PN246I module 1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A 26 µH 250 Ω 12 Ω 47 Ω 46 µH U 60 µF Key Tek ‘System 2’ generator with PN246I module TEST CIRCUIT 2 for IBO AND VBO PARAMETERS. K ton = 20ms R1 = 140Ω R2 = 240Ω 220V 50Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE : s s Pulse test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. 6/8 SMP50-xxx TEST CIRCUIT 3 for IH PARAMETERS. R Surge generator VBAT = - 48 V D.U.T This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs. - The D.U.T. will come back to the off-state within 50 ms max. PACKAGE MECHANICAL DATA SMA (JEDEC DO-214AC) E1 DIMENSIONS REF. D Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 A1 A2 b E c A1 E E1 D C L A2 b L FOOT PRINT in millimeters (in inches) 1.45 (0.057) 2.40 (0.094) 1.45 (0.057) 7/8 (0.065) 1.65 SMP50-xxx ORDER CODE SMP Trisil Surface Mount 50 - xx Voltage IPP = 50A ORDERING INFORMATION Part number SMP50-62 SMP50-68 SMP50-100 SMP50-120 SMP50-130 SMP50-180 SMP50-200 SMP50-220 SMP50-240 SMP50-270 Marking V06 V07 V10 V12 V13 V18 V20 V22 V24 V27 SMA 0.068 g 5000 Tape & reel Package Weight Base qty Delivery mode Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8