SMTPA100

® SMTPA SERIES TRISIL™ FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 50 A, 10/1000 µs. SMB (JEDEC DO-214AA) DESCRIPTION The SMTPAxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. SCHEMATIC DIAGRAM COMPLIES WITH THE FOLLOWING STANDARDS: (CCITT) ITU-K20 (CCITT) ITU-K17 VDE0433 VDE0878 IEC-1000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B BELLCORE TR-NWT-001089 First level BELLCORE TR-NWT-001089 Second level CNET l31-24 October 1998 - Ed: 7A Peak Surge Voltage (V) 1000 1500 2000 2000 level 3 level 4 1500 800 1000 2500 1000 5000 1000 Voltage Waveform (µs) 10/700 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 9/720 2/10 10/1000 2/10 0.5/700 Current Waveform (µs) 5/310 5/310 5/310 1/20 5/310 8/20 10/160 10/560 5/320 2/10 10/1000 2/10 0.8/310 Admissible Ipp (A) 25 38 50 50 50 100 75 55 25 150 50 150 25 Necessary Resistor (Ω) 12.5 6.5 11.5 10 11.5 - 1/5 SMTPA xxx ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol P IPP ITSM dV/dt Tstg Tj TL Power dissipation Peak pulse current Non repetitive surge peak on-state current Critical rate of rise of off-state voltage Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s. Parameter Tlead = 50 °C 10/1000 µs 8/20 µs tp = 20 ms VRM Value 5 50 100 30 5 - 55 to + 150 150 260 Unit W A A KV/µs °C °C °C THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads. Junction to ambient on printed circuit with standard footprint dimensions. Parameter Value 20 100 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol VRM IRM VR VBR VBO IH IBO IPP C Type Parameter Stand-off voltage Leakage current at stand-off voltage Continuous Reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance Marking IRM @ VRM max. Laser SMTPA62 SMTPA68 SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA240 SMTPA270 Note 1: Note 2: IR @ VR max. note 1 µA 50 50 50 50 50 50 50 50 50 50 VBO @ IBO max. note2 V 82 90 133 160 173 240 267 293 320 360 max. mA 800 800 800 800 800 800 800 800 800 800 IH min. note3 mA 150 150 150 150 150 150 150 150 150 150 C max. note4 pF 150 150 100 100 100 100 100 100 100 100 U01 U05 U13 U17 U19 U25 U27 U31 U35 U39 µA 2 2 2 2 2 2 2 2 2 2 V 56 61 90 108 117 162 180 198 216 243 V 62 68 100 120 130 180 200 220 240 270 Note 3: Note 4: All parameters tested at 25 °C, except where indicated. IR measured at VR guarantee VBRmin ≥ VR Measured at 50 Hz (1 cycle) - See test circuit 1. See test circuit 2. VR = 1V, F = 1MHz. Refer to fig.3 for C versus VR. 2/5 SMTPA xxx TEST CIRCUIT 1 FOR IBO and VBO parameters: tp = 20ms Auto Transformer 220V/2A static relay. K R1 140 R2 240 220V Vout IBO measure Transformer 220V/800V 5A D.U.T V BO measure TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. TEST CIRCUIT 2 for IH parameter. R D.U.T. V BAT = - 48 V Surge generator -V P This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 3/5 SMTPA xxx Fig. 1: Non repetitive surge peak on-state current versus overload duration (Tj initial=25°C). Fig. 2: Relative variation of holding current versus junction temperature. TSM (A) Fig. 3: Relative variation of junction capacitance versus reverse applied voltage (typical values). Note: For VRM upper than 56V, the curve is extrapolated (dotted line). Fig. 4: On-state current versus on-state voltage (typical values). IT(A) VR(V) VT(V) Fig. 5: Transient thermal impedance junction to ambient versus pulse duration (for FR4 PC Board with T lead = 10 mm). tp(s) 4/5 SMTPA xxx SM TPA 100 SURFACE MOUNT TRISIL PROTECTION 50 A VOLTAGE MARKING : Logo, date code, type code. PACKAGE MECHANICAL DATA. SMB (JEDEC DO-214AA) DIMENSIONS E1 REF. D Millimeters Min. 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063 A1 A2 b c E A1 A2 E C L E1 D b L FOOT PRINT DIMENSION (in millimeters) SMB Packaging : Standard packaging is in tape and reel Weight : 0.12g 2.3 1.52 2.75 1.52 I nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5