SMTPB175

® SMTPB SERIES TRISILTM MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes: ANALOG AND DIGITAL LINE CARDS MAIN DISTRIBUTION FRAMES TERMINALS AND TRANSMISSIONEQUIPMENT GMS-TUBE REPLACEMENT DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. BENEFITS NO AGEING AND NO NOISE IF DESTROYED, THE SMTPB FALLS INTO SHORT CIRCUIT, STILL ENSURING PROTECTION COMPLIES WITH THE FOLLOWING STANDARDS: CCITT K20 VDE0433 VDE0878 IEC-1000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B BELLCORE TR-NWT-001089 First level BELLCORE TR-NWT-001089 Second level CNET l31-24 August 1999 - Ed: 2C SMC SCHEMATIC DIAGRAM Peak Surge Voltage (V) 4000 4000 4000 level 4 level 4 1500 800 100 2500 1000 500 4000 Voltage Waveform (µs) 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 5/320 2/10 10/1000 2/10 0.5/700 Current Waveform (µs) 5/310 5/310 1/20 5/310 8/20 10/160 10/560 5/320 2/10 10/1000 2/10 0.8/310 Admissible Ipp (A) 100 100 100 100 100 200 100 25 500 100 500 100 Necessary Resistor (Ω) 1/5 SMTPBxxx ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol P IPP Power dissipation Peak pulse current Parameter Tlead = 50 °C 10/1000 µs 8/20 µs 2/10 µs tp = 20 ms VRM Value 5 100 250 500 50 5 - 55 to + 150 + 150 + 260 Unit W A ITSM dV/dt Tstg Tj TL Non repetitive surge peak on-state current Critical rate of rise of off-state voltage Storage temperature range Maximum junction temperature A KV/µs °C °C °C Maximum lead temperature for soldering during 10 s. THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient. On printed circuit with standard footprint dimensions. Parameter Value 20 75 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (Tamb =25°C) Symbol VRM IRM VR VBR VBO IH IBO IPP C Type Parameter Stand-off voltage Leakage current at stand-off voltage ContinuousReverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance Marking IRM @ VRM max. Laser SMTPB62 SMTPB68 SMTPB120 SMTPB200 SMTPB270 W07 W11 W21 W31 W43 µA 2 2 2 2 2 V 56 61 108 180 243 IR @ VR max. note1 µA 50 50 50 50 50 V 62 68 120 200 270 VBO @ IBO max. note2 V 82 90 160 267 360 max. mA 800 800 800 800 800 IH min. note3 mA 150 150 150 150 150 C typ. note4 pF 160 160 140 130 120 All parameters tested at 25°C, except where indicated. Note 1: Note 2: IR measured at VR guarantees VBRmin ≥ VR Measured at 50 Hz (1 cycle) - See test circuit 1. Note 3: Note 4: See test circuit 2. VR = 1V, F = 1MHz. Refer to fig 3 for C versus VR. 2/5 SMTPBxxx TEST CIRCUIT 1 FOR IBO and VBO parameters: tp = 20ms Auto Transformer 220V/2A static relay. K R1 140 R2 240 220V Vout IBO measure Transformer 220V/800V 5A D.U.T V BO measure TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. TEST CIRCUIT 2 for IH parameter. R D.U.T. VBAT = - 48 V Surge generator - VP This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 3/5 SMTPBxxx Fig. 1: Non repetitive surge peak on-state current versus overload duration (Tj initial=25°C). Fig. 2: Relative variation of holding current versus junction temperature. Fig. 3: Relative variation of junction capacitance versus reverse applied voltage(typical values). Note: For VRM upper than 56V, the curve is extrapolated(dotted line). Fig. 4: On-state voltage versus on-state current (typical values). IT(A) 50 Tj=25°C 10 VT(V) 1 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 Fig. 5: Transient thermal impedance junction to ambient versus pulse duration (for FR4 PC Board with recommended pad layout). 4/5 SMTPBxxx ORDER CODE SM TPB 100 SURFACE MOUNT TRISIL PROTECTION 100 A VOLTAGE Marking : Logo, date code, type code. PACKAGE MECHANICAL DATA. SMC DIMENSIONS E1 REF. A1 D Millimeters Min. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 A2 b c E E A1 E1 E2 D b C L A2 E2 L FOOTPRINT DIMENSIONS (in millimeters) SMC Packaging : Standardpackaging is in tapeand reel Weight : 0.25g. 3.3 2.0 4.2 2.0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5