SO2222

SO2222 SO2222A SMALL SIGNAL NPN TRANSISTORS Type SO2222 SO 2222A s Marking N13 N20 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY SO2907 AND SO2907A 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM P t ot T stg Tj Parameter SO2222 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value SO 2222A 75 40 6 0.8 350 -65 to 150 150 60 30 5 Uni t V V V A mW o o C C March 1996 1/5 SO2222/SO2222A THERMAL DATA R t hj-amb • R th j-SR • T hermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 350 290 o o C/W C/W • Mounted on a ceramic substrate area = 15 x 15 x 0.6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEX I BEX I CBO I EBO Parameter Collector Cut-off Current (V BE = 0) Base Cut-off Current (V BE = 0) Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 60 V V BE = -3 V for SO2222A V CE = 60 V V BE = -3 V for SO2222A V CB = rated V CBO V CB = rated V CBO V EB = 3 V for SO2222 for SO2222A I C = 10 mA for SO2222 for SO2222A I C = 10 µ A for SO2222 for SO2222A I E = 10 µ A for SO2222 for SO2222A I C = 150 mA I B = 15 mA for SO2222 for SO2222A I C = 500 mA I B = 50 mA for SO2222 for SO2222A I C = 150 mA I B = 15 mA for SO2222 for SO2222A I C = 500 mA I B = 50 mA for SO2222 for SO2222A I C = 0.1 mA I C = 1 mA I C = 10 mA I C = 150 mA I C = 150 mA I C = 500 mA for SO2222 for SO2222A V CE = 10 V V CE = 10 V VCE = 10 V V CE = 10 V V CE = 1 V V CE = 10 V 30 40 60 75 5 6 0.4 0.3 1.6 1 1.3 1.2 2.6 2 35 50 75 100 50 30 40 250 300 8 MHz MHz pF T j = 150 C o Min. Typ . Max. 10 20 10 10 30 15 Un it nA nA nA µA nA nA V V V V V V V V V V V V V V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage V CE(sat )∗ V BE(s at)∗ Collector-Base Saturation Voltage 0.6 h FE∗ DC Current G ain 300 fT Transition F requency I C = 20 mA VCE = 20V f = 100MHz for SO2222 for SO2222A IE = 0 V CB = 10 V f = 1 MHz C CB Collector Base Capacitance ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/5 SO2222/SO2222A ELECTRICAL CHARACTERISTICS (Continued) Symb ol C EB Parameter Emitter Base Capacitance Noise Figure Test Cond ition s I E = 0 V EB = 0.5 V for SO2222 for SO2222A f = 1MHz 30 25 f = 1 KHz 4 pF pF dB Min. Typ . Max. Un it NF I C = 0.1 mA VCE = 10 V ∆ f = 200 Hz R G = 1 K Ω for SO2222A only V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA for SO2222A only V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA for SO2222A only V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA for SO2222A only V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA for SO2222A only h i e∗ Input Impedance f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz f = 1 KHz 2 0.25 8 1.25 8 4 KΩ KΩ 10 -4 -4 10 h re∗ Reverse Voltage Ratio h fe ∗ Small Signal Current Gain Output Admittance 50 75 5 25 300 375 35 200 10 25 225 60 µS µS ns ns ns ns h oe∗ td tr ts tf Delay Time Rise Time Storage Time Fall T ime I C = -150 mA V BE = -0.5 V for SO2222A only I C = 150 mA I B1 = -I B2 = 15mA for SO2222A only ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 3/5 SO2222/SO2222A SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 4/5 SO2222/SO2222A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 5/5