SO2907

SO2907 SO2907A SMALL SIGNAL PNP TRANSISTORS Type SO2907 SO 2907A s Marking P05 P03 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING NPN COMPLEMENTS ARE RESPECTIVELY SO2907 AND SO2907A 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM P t ot T stg Tj Parameter SO2907 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value SO 2907A -60 -60 -5 -0.8 350 -65 to 150 150 -60 -40 Uni t V V V A mW o o C C March 1996 1/4 SO2907/SO2907A THERMAL DATA R t hj-amb • R th j-SR • T hermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 350 290 o o C/W C/W • Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEX I BEX I CBO Parameter Collector Cut-off Current Base Cut-off Current Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -30 V V CE = -30 V V CB = -50 V for SO2907 for SO2907A I C = -10 mA for SO2907 for SO2907A I C = -10 µ A -40 -60 -60 V BE = -3 V V BE = -3 V Min. Typ . Max. -50 -50 -20 -10 Un it nA nA nA nA V V V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage DC Current G ain I E = -10 µ A -5 V V CE(sat )∗ V BE(s at)∗ hFE∗ I C = -150 mA I C = -500 mA I C = -150 mA I C = -500 mA I C = -0.1 mA for SO2907 for SO2907A I C = -1 mA for SO2907 for SO2907A I C = -10 mA for SO2907 for SO2907A I C = -150 mA IE = 0 IC = 0 IB = -15 mA IB = -50 mA IB = -15 mA IB = -50 mA V CE = -10 V 35 75 V CE = -10 V 50 100 VCE = -10 V 75 100 100 200 -0.4 -1.6 -1.3 -2.6 V V V V V CE = -10 V f = 1 MHz f = 1 MHz 300 MHz 8 30 10 40 45 pF pF ns ns ns ns ns ns fT C CB C EB td tr t on ts tf t of f Transition F requency Collector Base Capacitance Emitter Base Capacitance Delay Time Rise Time Switching On Time Storage Time Fall T ime Switching Off Time I C = -50 mA V CE = -20V f = 100MHz V CB = -10 V V EB = -2 V I C = -150 mA IB1 = -15 mA I C = -150 mA IB1 = -I B2 = -15mA 80 30 100 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 SO2907/SO2907A SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 SO2907/SO2907A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4