SO5401

SO5401 SMALL SIGNAL PNP TRANSISTORS Type SO5401 s Marking P33 s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 oC Storage Temperature Max. O perating Junction Temperature Value -160 -150 -5 -0.6 200 -65 to 150 150 Uni t V V V A mW o o C C October 1997 1/4 SO5401 THERMAL DATA R t hj-amb • R th j-SR • T hermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 620 400 o o C/W C/W • Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IC = 0) Test Cond ition s V CB = -120 V V EB = -3 V I C = -100 µ A -160 Min. Typ . Max. -50 -50 Un it nA nA V V ( BR)CBO ∗ Collector-Emitter Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage DC Current G ain I C = -1 mA -150 V I C = -10 nA -5 V V CE(sat )∗ V BE(s at)∗ h FE∗ I C = -10 mA I C = -50 mA I C = -10 mA I C = -50 mA I C = -1 mA I C = -10 mA I C = -50 mA IB = -1 mA IB = -5 mA IB = -1 mA IB = -5 mA V CE = -5 V VCE = -5 V VCE = -5 V 50 60 50 100 240 -0.2 -0.5 -1 -1 V V V V fT C CB NF h fe ∗ Transition F requency Collector Base Capacitance Noise Figure Small Signal Current Gain I C = -10 mA V CE = -10V f = 1 MHz IE = 0 V CE = -10 V f = 1 MHz f = 1KHz 400 6 5 MHz pF dB V CE = -5 V IC = -0.25 mA ∆ f = 200 Hz R G = 1 K Ω V CE = -5 V IC = -1 mA f = 1KHz 40 200 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 S05401 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 SO5401 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4