SOA56

SOA56 SMALL SIGNAL PNP TRANSISTOR Type SOA56 s Marking 2GT s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION NPN COMPLEMENTS IS SOA06 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot T stg Tj March 1996 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value -80 -80 -4 -0.5 350 -65 to 150 150 Unit V V V A mW o o C C 1/4 SOA56 THERMAL DATA R t hj- amb • Thermal Resistance Junction-Ambient Max 350 o C/W • Mounted on a ceramic substrate area = 15 x 15 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IE = 0) Test Cond ition s V CB = -80 V V CE = -60 V I C = -1 mA -80 Min. Typ . Max. -100 -100 Un it nA nA V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain Transition F requency I E = -100 µA -4 V V CE(sat )∗ V BE(on) ∗ h FE∗ fT I C = -100 mA I C = -100 mA I C = -10 mA I C = -100 mA IB = -10 mA V CE = -1 V V CE = -1 V V CE = -1 V 50 50 50 -0.25 -1.2 V V I C = -10 mA V CE = -2 V f = 100 MHz MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % 2/4 SOA56 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 SOA56 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4