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SPV1001T40

SPV1001T40

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO-220-3

  • 描述:

    DIODE GEN PURP 40V 16A TO220AB

  • 数据手册
  • 价格&库存
SPV1001T40 数据手册
SPV1001 Cool bypass switch for photovoltaic applications Features ■ IF = 16 A, VR = 40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ K K A A A 175 °C operating junction temperature TO220 A K D2PAK Applications ■ Photovoltaic panels Description The SPV1001 is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. Table 1. Device summary Order codes SPV1001D40 Package D2PACK SPV1001D40TR SPV1001T40 November 2011 Packaging Tube Tape and reel TO220 Doc ID 18076 Rev 3 Tube 1/12 www.st.com 12 Maximum ratings SPV1001 1 Maximum ratings 1.1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Unit Max DC reverse voltage 40 V IF Max. forward current 16 A Non repetitive peak surge (half-wave, single-phase, 60 Hz) 250 A Human body level ≥8k V ESD level Thermal data Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance, junction-to-ambient (D2PAK, TO220) 1.5 °C/W Junction temperature operating range -40 to 175 °C Storage temperature range -40 to 175 °C TJ TSTG 2/12 Range [min, max] VR IFSM 1.2 Parameter Doc ID 18076 Rev 3 SPV1001 2 Electrical characteristics Electrical characteristics Table 4. Electrical characteristics Values Symbol Parameter Test condition IF = 16A (1) VF,AVG AVG forward voltage drop IR Reverse leakage current D TON/T ratio IF = 8A (1) VR = 40V IF = 8A (1) IF = 8A, TOFF VF Forward voltage drop IF = 8A (1), TON Unit Min Typ Max TJ = 25°C - 230 - mV TJ = 25°C - 120 - mV TJ = 125°C - 270 - mV TJ = 25°C - 1 - µA TJ = 125°C - 10 - µA TJ = 25°C - 95% - - TJ = 125°C - 75% - - TJ = 25°C - 920 - mV TJ = 125°C - 600 - mV TJ = 25°C - 70 - mV TJ = 125°C - 160 - mV 1. For correct power dissipation and heatsink sizing, please refer to Figure 1,4 e 7 Doc ID 18076 Rev 3 3/12 Device description 3 SPV1001 Device description A photovoltaic panel consists of a series of PV cells. In optimal conditions, all the cells are equally irradiated and function at the same current level. However, during normal operation some cells may become partially shaded or obscured. These shaded cells limit the current generated by the fully irradiated cells and, in the extreme cases where these cells are totally obscured, the current flow is blocked. In this case the shaded cells behave like a load, and the current generated from the fully irradiated cells produces overvoltages which can reach the breakdown threshold. This phenomenon, known as a “hot spot”, can cause overheating of the shaded cells and, in some cases, even permanent damage resulting in current leakage. To prevent hot spots, therefore, bypass diodes are connected in parallel to the cell strings. The device described here has the same functionality as a Schottky diode, but with improved performance. It features very low forward voltage drop and reverse leakage current. It consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. 4/12 Doc ID 18076 Rev 3 SPV1001 Device description Figure 1. Average forward power dissipation Figure 2. vs average forward current 7 ž& ț KHDWVLQNHU(SR[\SULQWHGERDUG)5&X XP 3) $9 :    )RUZDUG9ROWDJH P9 N ț FP  Ⱦ DN  Ⱦ DN  ȾD ȾDN  ț FP   ț FP  ț FP  Forward voltage       ,) $9 $                      Reverse current   !-V !-V Figure 3.  )RUZDUG&XUUHQW $ Figure 4. Thermal resistance junction-toambient vs copper surface under tab (1) —! ϭϬϬ 5WK MD ƒ&:   5ž$ ϭϬ  5ž$  5ž$   5ž$ ϭ   6 FPð 5ž$ Ϭ͘ϭ   Ϭ ϱ ϭϬ ϭϱ ϮϬ Ϯϱ ϯϬ ϯϱ ϰϬ ϰϱ ϱϬ 7         !-V !-V 1. Epoxy printed board FR4, Cu = 35 µm Doc ID 18076 Rev 3 5/12 Device description Figure 5. SPV1001 Average forward power dissipation Figure 6. vs average forward current @ 25°C of ambient temperature W&ΛϮϱ W&ͺs';tͿ Average forward power dissipation vs average forward current @ 75°C of ambient temperature W&Λϳϱ W&ͺs';tͿ ϯ͘Ϭ ϯ͘Ϭ ϭϬĐŵϮ ϭϬĐŵϮ ϳ͘ϱĐŵϮ ϳ͘ϱĐŵϮ ϱĐŵϮ ϱĐŵϮ Ϯ͘Ϭ Ϯ͘Ϭ Ϯ͘ϱĐŵϮ ϭ͘Ϭ Ϯ͘ϱĐŵϮ ϭ͘Ϭ Ϭ͘Ϭ Ϭ͘Ϭ Ϭ ϭ Ϯ ϯ ϰ ϱ ϲ ϳ ϴ ϵ ϭϬ ϭϭ ϭϮ ϭϯ ϭϰ ϭϱ Ϭ ϭ /&ͺs';Ϳ ϭϴ Average current versus ambient temperature /&;sͿ;Ϳ ZƚŚ;ũͲĂͿсZƚŚ;ũͲĐͿ ϭϲ ϭϰ ϭϮ ZƚŚ;ũͲĂͿсϯϬ϶ͬt ϭϬ ϴ ϲ ϰ Ϯ dĂŵď;϶Ϳ Ϭ Ϭ Ϯϱ ϱϬ ϳϱ ϭϬϬ ϭϮϱ ϭϱϬ ϭϳϱ !-V 6/12 ϯ ϰ ϱ ϲ ϳ ϴ ϵ ϭϬ ϭϭ ϭϮ ϭϯ ϭϰ ϭϱ /&ͺs';Ϳ !-V Figure 7. Ϯ Doc ID 18076 Rev 3 !-V SPV1001 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 18076 Rev 3 7/12 Package mechanical data Figure 8. SPV1001 TO-220 type A drawing 0015988_typeA_Rev_S 8/12 Doc ID 18076 Rev 3 SPV1001 Package mechanical data Table 6. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° Doc ID 18076 Rev 3 9/12 Package mechanical data Figure 9. SPV1001 D²PAK (TO-263) drawing 0079457_R 10/12 Doc ID 18076 Rev 3 SPV1001 5 Revision history Revision history Table 7. Document revision history Date Revision Changes 30-Mar-2011 1 Initial release 14-Jun-2011 2 – – – – 11-Nov-2011 3 Updated Figure 3 Added D2PAK package Document status promoted from preliminary data to full datasheet Part number in title changed to SPV1001 Minor text changes Doc ID 18076 Rev 3 11/12 SPV1001 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 18076 Rev 3
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