ST13007DFP

ST13007DFP ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 oC LARGE RBSOA FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ SWITCH MODE POWER SUPPLIES 3 1 2 TO-220FP ■ INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CEV Collector-Emitter Voltage (V BE = -1.5V) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 8 A 16 A IC I CM Parameter Collector Peak Current Base Current 4 A I BM Base Peak Current 8 A P tot Total Dissipation at T c ≤ 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature 36 W 1500 V IB Visol T stg Tj May 2003 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/7 ST13007DFP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 3.47 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Max. Unit 10 0.5 µA mA V CE = 400 V 100 µA V EB = 9 V 100 µA I CES Collector Cut-off Current (V BE = 0) V CE = 700 V V CE = 700 V I CEO Collector Cut-off Current (I B = 0) I EBO Emitter Cut-off Current (I C = 0) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Min. Typ. T c = 100 o C I C = 10 mA 400 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A IC = 5 A IC = 5 A I B = 0.4 A IB = 1 A IB = 1 A DC Current Gain IC = 2 A IC = 5 A V CE = 5 V V CE = 5 V Diode Forward Voltage IC = 3 A ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 5 A V CL = 250 V R BB = 0Ω I B1 = 1 A V BE(off) = -5 V L = 200 µH (see figure 1) 1.7 90 ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 5 A V CL = 250 V R BB = 0Ω VBE(off) = -5 V Ι B1 = 1 A o L = 200 µH T C = 125 C (see figure 1) 2.2 150 h FE ∗ Vf * Pulsed: Pulse duration = 300 µs, duty cycle 2 %. 2/7 = = = = 2 5 8 5 A A A A IB IB IB IB = = = = 0.4 A 1A 2A 1A T c = 100 o C T c = 100 o C 18 8 0.8 1.5 2 3 V V V V 1.2 1.6 1.5 V V V 40 25 2.5 V 2.3 150 µs ns µs ns ST13007DFP Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 ST13007DFP Diode Forward Voltage Switching Time Resistive Load Switching Time Inductive Load Reverse Biased SOA 4/7 ST13007DFP Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 ST13007DFP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 6/7 L4 ST13007DFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7