ST1S30IPUR

ST1S30 3 A, 1.5 MHz PWM step-down switching regulator with synchronous rectification Datasheet - production data Description The ST1S30 is a step-down DC-DC converter optimized for powering low output voltage applications. It supplies a current in excess of 3 A over an input voltage range from 2.7 V to 6 V. A high PWM switching frequency (1.5 MHz) allows the use of tiny surface-mount components. DFN8 (4 x 4 mm) Features • 1.5 MHz fixed frequency PWM with current control mode • 3 A output current capability • Typical efficiency: > 90% • 2 % DC output voltage tolerance • Two versions available: power good or inhibit Moreover, since the required synchronous rectifier is integrated, the number of the external components is reduced to minimum: a resistor divider, an inductor and two capacitors. The Power Good function continuously monitors the output voltage. An open drain Power Good flag is released when the output voltage is within regulation. In addition, a low output ripple is guaranteed by the current mode PWM topology and by the use of low ESR SMD ceramic capacitors. The device is thermally protected and the output current limited to prevent damages due to accidental short circuit. The ST1S30 is available in the DFN8 (4 x 4 mm) package. • Integrated output over-voltage protection • Non switching quiescent current: (typ.) 1.5 mA over temperature range • RDSon (typ.) 100 mΩ • Utilizes tiny capacitors and inductors • Operating junction temp. -25 °C to 125 °C • Available in DFN8 (4 x 4 mm) exposed pad Table 1. Device summary Order codes ST1S30PUR (1) ST1S30IPUR Package DFN8 (4 x 4 mm) Note PG version INHIBIT version 1. Available on request. May 2022 This is information on a product in full production. DocID17927 Rev 2 1/11 www.st.com Contents ST1S30 Contents 1 Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Typical application circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 DocID17927 Rev 2 ST1S30 1 Diagram Diagram Figure 1. Schematic diagram (*) Only for ST1S30I (**) Only for ST1S30 DocID17927 Rev 2 3/11 11 Pin configuration 2 ST1S30 Pin configuration Figure 2. Pin connections (bottom view) ST1S30PUR ST1S30IPUR $0Y Table 2. Pin description Pin n° Symbol 1 FB 2 GND 3 SW 6 7 8 4/11 Name and function Feedback voltage System ground Switching pin VIN_SW Power supply for the MOSFET switch VIN_A Power supply for analog circuit INH/PG Inhibit (INH) for ST1S30IPUR or Power Good (PG) for ST1S30PUR Exposed pad GND 4, 5 NC To be connected to PCB ground plane for optimal electrical and thermal performance Not internally connected. Can be connected to GND or left floating DocID17927 Rev 2 ST1S30 3 Maximum ratings Maximum ratings Table 3. Absolute maximum ratings Note: Symbol Parameter Value Unit VIN_SW Positive power supply voltage -0.3 to 7 V VIN_A Positive power supply voltage -0.3 to 7 V VINH Inhibit voltage (I version) -0.3 to VI + 0.3 V SWITCH voltage Max. voltage of output pin -0.3 to 7 V VFB Feedback voltage -0.3 to 3 V PG Power Good open drain -0.3 to 7 V TJ Max junction temperature -40 to 150 °C TSTG Storage temperature range -65 to 150 °C TLEAD Lead temperature (soldering) 10 sec 260 °C Absolute maximum ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Table 4. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case 10 °C/W RthJA Thermal resistance junction-ambient 40 °C/W Value Unit Table 5. ESD performance Symbol Parameter Test conditions ESD ESD protection voltage HBM 2 kV ESD ESD protection voltage MM 500 V DocID17927 Rev 2 5/11 11 Electrical characteristics 4 ST1S30 Electrical characteristics Refer to Figure 3 application circuit VIN_SW = VIN_A = 5 V, VO = 1.2 V, C1 = 10 µF, C2 = 22 µF, L1 = 2.2 µH, TJ = -25 to 125 °C (unless otherwise specified. Typical values are referred to 25 °C) Table 6. Electrical characteristics for ST1S30 Symbol Parameter Test conditions Min. Typ. Max. Unit 784 800 816 mV 600 nA 5.5 V FB Feedback voltage IFB VFB pin bias current VI Input voltage IO = 10 mA to 3 A Under voltage lock out threshold VI Rising 2.3 V Hysteresis 150 mV Overvoltage protection threshold VO rising Overvoltage protection hysteresis VO falling 5 % Overvoltage clamping current VO = 1.2 V 300 mA VINH > 1.2 V, not switching 1.5 UVLO OVP IOVP 2.7 1.05 VO 1.1 VO V 2.5 IQ Quiescent current IO Output current VI = 2.7 to 5.5 V (1) %VO/∆VI Output line regulation VI = 2.7 V to 5.5 V, IO = 100 mA (1) 0.16 %VO/ ∆VI %VO/∆IO Output load regulation IO = 10 mA to 3 A (1) 0.2 % PWM switching frequency VFB = 0.65 V PWMfS DMAX PG VINH < 0.0 V, T = - 30 °C to 85 °C Maximum duty cycle 1 3 mA A 1.2 1.5 80 87 % 0.92 VO V Power good output threshold Power good output voltage low ISINK = 6 mA open drain output 1.8 0.4 MHz V RDSON-N NMOS switch on resistance ISW = 750 mA 0.1 W RDSON-P PMOS switch on resistance ISW = 750 mA 0.1 W Switching current limitation (1) 3.7 IO = 10 mA to 100 mA, VO = 3.3 V 65 ISWL n TSHDN THYS Efficiency (1) IO = 100 mA to 3 A, VO = 3.3 V 4.4 5.1 A % 85 Thermal shutdown 150 °C Thermal shutdown hysteresis 20 °C %VO/∆IO Load transient response IO = 100 mA to 1 A, TA = 25 °C tR = tF ≥ 200 ns (1) -10 +10 %VO %VO/∆IO Short circuit removal response IO = 10 mA to IO = short, TA = 25 °C (1) -10 +10 %VO 1. Guaranteed by design, but not tested in production. 6/11 DocID17927 Rev 2 ST1S30 Electrical characteristics Refer to Figure 4 application circuit VIN_SW = VIN_A = VINH = 5 V, VO = 1.2 V, C1 = 10 µF, C2 = 22 µF, C3 = 1 µF, L1 = 2.2 µH, TJ = -25 to 125 °C (unless otherwise specified. Typical values are referred to 25 °C) Table 7. Electrical characteristics for ST1S30I Symbol Parameter Test conditions FB Feedback voltage IFB VFB pin bias current VI Minimum input voltage IO = 10 mA to 2 A Overvoltage protection threshold VO rising Overvoltage protection hysteresis VO falling OVP IQ Quiescent current IO Output current VINH Inhibit threshold Min. Typ. Max. Unit 784 800 816 mV 600 nA 2.7 V 1.05 VO 1.1 VO 5 VINH > 1.2 V, not switching 1.5 VINH < 0.0 V, T = - 30 °C to 85 °C VI = 2.7 to 5.5 V (1) % 2.5 mA 1 µA 3 Device ON, VI = 2.7 to 5.5 V 1.3 Device ON, VI = 2.7 to 5 V 1.2 A V Device OFF IINH V 0.4 Inhibit pin current 2 µA %VO/ ∆VI %VO/∆VI Output line regulation VI = 2.7 V to 5.5 V, IO = 100 mA (1) 0.16 %VO/∆IO Output load regulation IO = 10 mA to 2 A (1) 0.2 0.6 %VO/ ∆IO PWM switching frequency VFB = 0.65 V 1.2 1.5 1.8 MHz 80 87 % PWMfS DMAX Maximum duty cycle RDSON-N NMOS switch on resistance ISW = 750 mA 0.1 W RDSON-P PMOS switch on resistance ISW = 750 mA 0.1 W Switching current limitation (1) 3.7 IO = 10 mA to 100 mA, VO = 3.3 V 65 ISWL n TSHDN THYS Efficiency (1) IO = 100 mA to 3 A, VO = 3.3 V 4.4 5.1 A % 85 Thermal shutdown 150 °C Thermal shutdown hysteresis 20 °C %VO/∆IO Load transient response IO = 100 mA to 1 A, TA = 25 °C tR = tF ≥ 200 ns (1) -10 +10 %VO %VO/∆IO Short circuit removal response IO = 10 mA to IO = short, TA = 25 °C (1) -10 +10 %VO 1. Guaranteed by design, but not tested in production. DocID17927 Rev 2 7/11 11 Typical application circuits 5 ST1S30 Typical application circuits Figure 3. Application circuit fot VOUT > 1.2 V Figure 4. Application circuit for 0.8 V < VOUT < 1.2 V Note: 8/11 These typical application circuits are provided to help designing the external components. However, we recommend to thoroughly validate any circuit solution in the real application environment conditions. DocID17927 Rev 2 ST1S30 6 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. DFN8 (4 x 4) mechanical data mm. Dim. Min. Typ. Max. A 0.80 0.90 1.00 A1 0 0.02 0.05 A3 0.20 b 0.23 0.30 0.38 D 3.90 4.00 4.10 D2 2.82 3.00 3.23 E 3.90 4.00 4.10 E2 2.05 2.20 2.30 e L 0.80 0.40 0.50 0.60 Figure 5. DFN8 (4 x 4) mechanical dimensions % DocID17927 Rev 2 9/11 11 Revision history 7 ST1S30 Revision history Table 9. Document revision history 10/11 Date Revision Changes 09-Sep-2010 1 First release 04-May-2022 2 Updated title in Figure 2 DocID17927 Rev 2 ST1S30 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DocID17927 Rev 2 11/11 11