ST2310DHI

ST2310DHI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 APPLICATIONS: ■ HORIZONTAL DEFLECTION HIGH END TVS 1 c u d ISOWATT218 DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. e t le ) s t( o r P INTERNAL SCHEMATIC DIAGRAM (s) o s b O - RBE =32 Ω Typ. t c u d o r P e t e l o ABSOLUTE MAXIMUM RATINGS Symbol V CES s b O V CEO V EBO IC I CM IB P tot V isol T stg Tj April 2003 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value 1500 600 7 12 25 7 55 2500 -65 to 150 150 Unit V V V A A A W V o o C C 1/6 ST2310DHI THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 2.3 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 1 2 mA mA 210 mA I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V I EBO Emitter Cut-off Current (I C = 0) V EB = 4 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 800 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 7 A I B = 1.75 A 3 V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 7 A I B = 1.75 A 1.1 V DC Current Gain IC = 1 A IC = 7 A IC = 7 A h FE ∗ ts tf INDUCTIVE LOAD Storage Time Fall Time Vf Diode Forward Voltage I C = 7 A T J = 125 o C 70 7 15 5 V CE = 5 V V CE = 1 V V CE = 5 V IC = 5 A I B(on) = 0.9 A L BB(off) = 1.9 µH r P e u d o Safe Operating Area t e l o s b O 2/6 c u d f = 32 KHz V BE(off) = -2.5 V (see figure 1) e t le o s b O - Thermal Impedance ) s t( 8.5 5.5 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ) s ( ct V o r P 2 0.25 2.5 0.5 µs µs 1.5 2.2 V ST2310DHI Derating Curve Output Characteristics Collector Emitter Saturation Voltage Base Emitter Saturation Voltage c u d e t le ) s ( ct r P e u d o DC Current Gain ) s t( o r P o s b O - DC Current Gain t e l o s b O 3/6 ST2310DHI Power Losses Switching Time Inductive Load Reverse Biased SOA c u d e t le ) s ( ct u d o r P e Figure 1: Inductive Load Switching Test Circuit. t e l o s b O 4/6 o s b O - o r P ) s t( ST2310DHI ISOWATT218 NARROW LEADS MECHANICAL DATA DIM. mm TYP. A C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 0.75 1.50 1.90 10.80 15.80 MAX. 5.65 3.80 3.10 2.08 0.95 0.95 1.70 2.10 1.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.030 0.059 0.075 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 0.354 e t le 4.6 3.5 c u d o r P ) s t( 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 so 3.7 ) s ( ct MAX. 0.222 0.150 0.122 0.082 0.037 0.037 0.067 0.083 0.043 0.441 0.638 0.425 0.622 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 inch TYP. 0.138 0.146 b O - u d o r P e t e l o s b O - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P025C/B 5/6 ST2310DHI c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6