ST2310FX
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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NEW SERIES, ENHANCED PERFORMANCE
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
HIGH VOLTAGE CAPABILITY ( 1500 V)
HIGH SWITCHING SPEED
TIGTHER hfe CONTROL
IMPROVED RUGGEDNESS
Figure 1: Package
APPLICATION
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HORIZONTAL DEFLECTION FOR
MONITORS 17 " AND HIGH END TVs
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
ISOWATT218FX
Figure 2: Internal Schematic Diagram
Table 1: Order Code
Part Number
Marking
Package
Packaging
ST2310FX
2310FX
ISOWATT218FX
TUBE
February 2005
Rev. 2
1/8
ST2310FX
Table 2: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
1500
V
VCEO
Collector-Emitter Voltage (IB= 0)
600
V
VEBO
Emitter-Base Voltage (IC= 0)
7
V
Collector Current
12
A
Collector Peak Current (tp < 5ms)
25
A
IC
ICM
IB
Base Current
7
A
Ptot
Total Dissipation at TC = 25 oC
65
W
Visol
Insulation Withstand Voltage (RMS) from All Three Leads to
External Heatsink
2500
V
Tstg
Storage Temperature
-65 to 150
°C
TJ
Max. Operating Junction Temperature
150
°C
1.9
oC/W
Table 3: Thermal Data
Symbol
Rthj-case
Parameter
Unit
Thermal Resistance Junction-Case
Max
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
ICES
IEBO
Parameter
Test Conditions
Collector Cut-off Current
(VBE = 0)
VCE = 1500 V
Emitter Cut-off Current
VEB = 7 V
VCE = 1500 V
Tj = 125
Min.
Typ.
oC
Max.
Unit
1
mA
2
mA
1
mA
(IC = 0 )
VCE(sus)* Collector-Emitter
IC = 100 mA
L = 25 mH
600
V
IC = 7 A
IB = 1.75 A
3
V
IC = 7 A
IB = 1.75 A
1.1
V
IC = 1 A
VCE = 5 V
25
IC = 7 A
VCE = 1 V
5.5
IC = 7 A
VCE = 5 V
Sustaining Voltage
(IB = 0 )
VCE(sat)* Collector-Emitter
Saturation Voltage
VBE(sat)* Base-Emitter
Saturation Voltage
hFE*
DC Current Gain
9.5
INDUCTIVE LOAD
IC = 6 A
fh = 64 KHz
ts
Storage Time
IB(on) = 1 A
VBE(off) = -2.5 V
2.3
3
µs
tf
Fall Time
(see figure 14)
0.16
0.35
µs
LBB(off) = 1.3 µH
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.
2/8
6.5
ST2310FX
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Derating Curve
Figure 7: Output Chatacterisctics
Figure 5: Collector-Emitter Saturation Voltage
Figure 8: Base-Emitter Saturation Voltage
3/8
ST2310FX
Figure 9: DC Current Gain
Figure 12: DC Current Gain
Figure 10: Power Losses
Figure 13: Switching Time Inductive Load
Figure 11: Reverse Biased Safe Operating Area
4/8
ST2310FX
Figure 14: Inductive Load Switching test Circuit
5/8
ST2310FX
ISOWATT218FX MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
G
G1
H
L
L2
L3
L4
L5
L6
L7
N
R
Dia
MIN.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
mm.
TYP
MAX.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
5.45
15.30
9
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
15.70
10.20
23.20
26.70
44.40
4.70
24.70
15
2.20
4.20
3.80
7627132 B
6/8
ST2310FX
Table 5: Revision History
Date
Release
01-Jul-2004
08-Feb-2005
1
2
Change Designator
First Release.
Table 1 has been added on page 1.
7/8
ST2310FX
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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