STAC2932B

STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European directive • ST air cavity packaging technology - STAC™ package STAC244B Air cavity Description The STAC2932B is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V DC large signal applications up to 250 MHz. Figure 1. Pin connection The STAC2932B benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC™. 1 1 2 3 3 1. Drain 2. Source (bottom side) 3. Gate Table 1. Device summary Order code Marking Base qty. Package Packaging STAC2932BW STAC2932(1) 20 STAC244B Tray 1. For more details please refer to Chapter 7: Marking, packing and shipping specifications. January 2014 This is information on a product in full production. DocID15497 Rev 6 1/14 www.st.com Contents STAC2932B Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 12 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 DocID15497 Rev 6 STAC2932B Electrical data 1 Electrical data 1.1 Maximum ratings (TCASE = 25 °C) Table 2. Absolute maximum ratings Symbol V(BR)DSS(1) VDGR VGS ID PDISS TJ TSTG Parameter Value Unit Drain source voltage 125 V Drain-gate voltage (RGS = 1 MΩ) 125 V Gate-source voltage ±20 V Drain current 40 A Power dissipation 625 W Max. operating junction temperature 200 °C -65 to +150 °C Value Unit 0.28 °C/W Storage temperature 1. TJ = 150 °C 1.2 Thermal data Table 3. Thermal data Symbol RthJC Parameter Junction - case thermal resistance DocID15497 Rev 6 3/14 14 Electrical characteristics 2 STAC2932B Electrical characteristics TCASE = +25 °C 2.1 Static Table 4. Static (per side) Symbol Test conditions Min. Max. 125 Unit V(BR)DSS VGS = 0 V IDS = 100 mA IDSS VGS = 0 V VDS = 50 V 50 μA IGSS VGS = 20 V VDS = 0 V 250 nA VGS(Q) VDS = 10 V ID = 250 mA 4.0 V VDS(ON) VGS = 10 V ID = 10 A 3.0 V GFS VDS = 10 V ID = 5 A 1.5 COSS VGS = 0 V VDS = 50 V V 2.5 5 CISS f = 1 MHz CRSS 2.2 Typ. S 468 pF 206 pF 16 pF Dynamic Table 5. Dynamic Symbol 4/14 Test conditions Min. Typ. Max. Unit POUT VDD = 50 V, IDQ = 2 x 250 mA, PIN = 4 W, f = 175 MHz 300 390 W hD VDD = 50 V, IDQ = 2 x 250 mA, PIN = 4 W, f = 175 MHz 55 68 % DocID15497 Rev 6 STAC2932B 3 Impedance Impedance Figure 2. Current conventions Table 6. Impedance data Note: Freq. (MHz) ZIN (Ω) ZDL(Ω) 175 MHz 2.0 - j2.0 3.5 + j5.2 Measured gate to gate and drain to drain, respectively. DocID15497 Rev 6 5/14 14 Typical performance 4 STAC2932B Typical performance Figure 3. Capacitances vs drain supply voltage Figure 4. Output power vs drain supply voltage $0Y  3LQĆ Ć:  3LQĆ Ć:  &RVV  &UVV  &LVV 3RXWĆ: &DSDFLWDQFHVĆS) ".W      3LQĆ :          )UHT 0+] ,GT [P$ 7FDVH  &          9GGĆ9 9GGĆ9 Figure 5. Output power vs gate voltage 9GGĆ Ć9   3RXWĆ: 3RXWĆ: 7FDVHĆ Ćƒ&      )UHT 0+] ,GT [P$ 7FDVH   & 3LQĆ Ć Ć:  )UHT 0+] ,GT [P$ 7FDVH  &     6/14 9GGĆ Ć9  7FDVHĆ Ćƒ&  $0Y  7FDVHĆ Ćƒ&   Figure 6. Output power vs input power $0Y      9JVĆ9                ,QSXWĆSRZHUĆ: DocID15497 Rev 6 STAC2932B Typical performance Figure 7. Output power vs input power and case temperature Figure 8. Efficiency vs output power and case temperature $0Y   (IILFLHQF\Ć 3RXWĆ:  )UHT 0+] 9GG 9 ,GT [P$  $0Y    7FDVHĆ Ćƒ&  7FDVHĆ Ćƒ&  7FDVHĆ Ćƒ&    )UHT 0+] 9GG 9 ,GT [P$  7FDVHĆ Ćƒ& 7FDVHĆ Ćƒ& 7FDVHĆ Ćƒ&                  ,QSXWĆSRZHUĆ: DocID15497 Rev 6              2XWSXWĆSRZHUĆ: 7/14 14 Test circuit 5 STAC2932B Test circuit Figure 9. 175 MHz test circuit schematic (production test circuit) % $ $ % % & $ $ $ $ $ & ',0 & % ',0(16,217$%/( 63$&( $ & ,1 00 $ %     &   75$160,66,21/,1(',0(16,216 )% & )% )% 5 &25( 7 7 & )% /, & '87 7 & & & & & & & & & 7 & & )% 9JJ 5 )% & 5 5 & & & 127(6 ',0(16,216$7&20321(176