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STAC3932B

STAC3932B

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    STAC244B

  • 描述:

    TRANS RF PWR N-CH 580W STAC244B

  • 数据手册
  • 价格&库存
STAC3932B 数据手册
STAC3932B Datasheet HF/VHF/UHF RF power N-channel MOSFET Features 1 1 2 3 3 STAC780-4B Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Order code Frequency VDD POUT Gain Efficiency STAC3932B 123 MHz 100 V 580 W 24.6 dB 70 % • • • Excellent thermal stability Common source push-pull configuration POUT = 580 W typ. with 24.6 dB gain at 123 MHz • • In compliance with the 2002/95/EC European directive ST air-cavity STAC packaging technology Description The STAC3932B is an N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 250 MHz. Product status STAC3932B Product summary Order code STAC3932B Marking STAC3932 Package STAC780-4B Packing Box Base / Bulk qty 20 / 80 DS6157 - Rev 8 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com STAC3932B Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (TCASE = 25 °C) Symbol V(BR)DSS (1) VDGR VGS ID PDISS TJ TSTG Parameter Value Unit Drain source voltage 250 V Drain-gate voltage (RGS = 1 MΩ) 250 V Gate-source voltage ±20 V Drain current 20 A Power dissipation 625 W Maximum operating junction temperature 200 °C -65 to +150 °C Value Unit 0.28 °C/W Storage temperature range 1. TJ = 150 °C 1.2 Thermal data Table 2. Thermal data Symbol RthJC 1.3 Parameter Junction - case thermal resistance ESD protection characteristics Table 3. ESD protection Symbol HBM DS6157 - Rev 8 Test Methodology Human Body Model (per JESD22-A114) Class 2 page 2/16 STAC3932B Electrical characteristics 2 Electrical characteristics TCASE = +25 °C (unless otherwise specified) 2.1 Static Table 4. Static Symbol V(BR)DSS Drain - Source Breakdown voltage Test conditions VGS = 0 V, IDS = 100 mA, TJ = 150 °C Min. Typ. Max. 250 Unit V IDSS Zero gate voltage drain leakage current VGS = 0 V, VDS = 100 V 1 mA IGSS Gate - Source leakage current VGS = 20 V, VDS = 0 V 250 nA Drain - Source on voltage VGS = 10 V, ID = 5 A 3.5 V VTH Gate - Source threshold voltage IDS = 250 mA 2.0 4.0 V GFS Forward transconductance VDS = 10 V, ID = 2.5 A 3.0 5.0 S CISS Input capacitance VDS(ON) 2.2 Parameter COSS Ouput capacitance CRSS Reverse transfer capacitance 2.5 VGS = 0 V, VDS = 100 V, f = 1 MHz 492 pF 134 pF 5.2 pF Dynamic Table 5. Dynamic (1) Symbol Parameter Test conditions Min. Typ. Max. Unit 450 580 - W POUT Output power CW, PIN = 2 W POUT Output power Pulse PW = 1 ms, DC = 10 % , PIN = 8 W 900 - W ŋD Drain efficiency CW, PIN = 2 W 70 - % ŋD Drain efficiency Pulse PW = 1 ms, DC = 10 % , PIN = 8 W 65 - % 1. VDD = 100 V, IDQ = 2 x 250 mA, f = 123 MHz DS6157 - Rev 8 page 3/16 STAC3932B Impedances 3 Impedances Figure 1. Impedance data D ZDL Typical input impedance G Typical load impedance ZIN S Note: Measured gate-to-gate and drain-to-drain, respectively (balanced configuration). Table 6. Impedance data DS6157 - Rev 8 Frequency ZIN (Ω) ZDL(Ω) 123 MHz (pulse) 1.0 - j 4.80 6.3 + j 10.5 123 MHz (CW) 0.8 - j 3.45 5.0 + j 13.0 64 MHz (pulse) 1.4 - j 10.0 12.8 + j 14.0 page 4/16 STAC3932B Typical performance 4 Typical performance Figure 2. Capacitances vs drain supply voltage 800 Capacitance (pF) 700 600 CISS 500 400 300 200 COSS 100 CRSS 0 0 10 20 30 40 50 60 70 80 90 100 110 Vdd (V) AM0110 6v1 Figure 3. Safe operating area 100 Max Drain Current - Id (A) 10 n atio ited ) on ds( R by lim 1ms er Op 10ms DC 1 Single Pulse Tcase = +25 °C / Tj = +200°C 0 1 10 Drain supply voltage DS6157 - Rev 8 100 - Vdd (V) 1000 AM01107v1 page 5/16 STAC3932B Typical performance Figure 4. Transient thermal impedance Single - Repetitive pulse Thermal Impedance Zth j-c (°C/W) 0.30 AM06094v1 0.25 single pulse 0.20 0.1 0.2 0.15 0.3 0.4 0.5 0.10 0.6 0.7 0.8 0.05 0.9 0.00 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Rectangular power pulse width (s) Figure 5. Transient thermal model AM06106V1 DS6157 - Rev 8 page 6/16 STAC3932B Typical performance Figure 6. Zero temperature coefficient point AM01108v1 700 100 600 90 500 80 400 70 300 60 200 50 F = 123 MHz VDD = 100 V IDQ = 2 x 250 mA 100 40 0 30 0.0 Pout DS6157 - Rev 8 Efficiency (%) Output power (W) Figure 7. Output power and efficiency vs input power (CW) 1.0 Eff 2.0 Input power (W) 3.0 4.0 AM01109v1 page 7/16 STAC3932B Typical performance Figure 8. Gain vs output power (CW) 36 34 Gain (dB) 32 30 28 F = 123 MHz VDD = 100 V IDQ = 2 x 250 mA 26 24 22 20 0 100 200 300 400 500 600 Output power (W) 700 AM01110v1 1000 100 900 90 800 80 700 70 600 60 500 50 400 40 F = 123 MHz VDD = 100V IDQ = 2 x 250 mA 300 30 200 Efficiency (%) Output power (W) Figure 9. Output power and efficiency vs input power (PW = 1 ms, DC = 10%) 20 100 10 0 0 0 Pout 1 2 Efficiency 3 4 5 6 7 8 9 Input power (W) AM01111v1 DS6157 - Rev 8 page 8/16 STAC3932B Test circuit 5 Test circuit 5.1 Electrical schematic and BOM Figure 10. Electrical schematic AM01103v1 Table 7. Bill of materials DS6157 - Rev 8 Component Description C1 270 pF ATC 100B chip capacitor C2 180 pF ATC 100B chip capacitor C3, C4 750 pF ATC 700B chip capacitor C5, C8 43 pF ATC 100B chip capacitor C6 20 pF ATC 100B chip capacitor C7 1000 pF ATC 100C chip capacitor C9 5.6 pF ATC 100B chip capacitor C10 2200 pF ATC 100C chip capacitor C11 470 pF ATC 100B chip capacitor C12 100 µF, 200 V electrolytic capacitor C13, C14 1200 pF ATC 700B chip capacitor R1, R2 15 Ω 1/4 W chip resistor R3, R4 30 Ω 1/4 W axial lead resistor L1 3 turns, 16 ga magnet wire, Id 3/8", .165" turn spacing, 78 nH FB1, FB2 ferrite bead, Fair-Rite # 2743019447 B1 1/4 λ balun transformer, RG316-25 Ω ,16.5" T1 20 ga teflon coated wire thru 4 copper tubes OD 1/8"x 1.5" TL1, TL2 0.740" x 0.200" microstrip TL3, TL4 0.360" x 0.200" microstrip TL5, TL6 0.480" x 0.350" microstrip TL7, TL8 0.220" x 0.350" microstrip TL9, TL10 0.350" x 0.660" microstrip TL11 0.415" x 0.200" microstrip Board 0.062" FR-4 page 9/16 STAC3932B Board and layout 5.2 Board and layout Figure 11. Test circuit PCB photo AM01104v1 Figure 12. Test circuit layout AM01105 v1 DS6157 - Rev 8 page 10/16 STAC3932B Package information 6 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 6.1 STAC780-4B package information Figure 13. STAC780-4B package outline DM00481937 rev.2 DS6157 - Rev 8 page 11/16 STAC3932B STAC780-4B package information Table 8. STAC780-4B mechanical data Symbol DS6157 - Rev 8 Milimeters Min Typ Max A 3.76 3.86 A1 5.03 5.13 B 4.57 5.08 C 9.65 9.91 D 17.78 18.08 E 33.88 34.19 F 0.13 0.18 G 0.97 1.14 H 1.52 1.70 I 4.83 5.33 J 9.52 9.78 K 27.69 28.19 L 3.20 3.25 3.30 M 3.43 3.51 3.58 M 3.30 3.38 3.45 p 7.14 7.21 7.29 q 1.45 R1 0.64 R2 1.52 r 1.52 s 0.51 Θ 10° CH1 2.03 CH2 1.52 page 12/16 STAC3932B Marking information 6.2 Marking information LEGEND PACKAGE FACE : TOP Marking Composition Field A - MARKING AREA B - ST LOGO C - Assy Plant (PP) D - BE Sequence (LLL) A B C F D E G H I E - Diffusion Traceability Plant (WX) F - COUNTRY OF ORIGIN (MAX CHAR ALLOWED = 3) G - Test & Finishing Plant (TF) H - Assy Year (Y) I - Assy Week (WW) DS6157 - Rev 8 page 13/16 STAC3932B Revision history Table 9. Document revision history DS6157 - Rev 8 Date Revision Changes 06-Mar-2009 1 First release. 18-Feb-2010 2 Updated description on cover page. 16-Mar-2010 3 06-Jul-2011 4 22-Sep-2011 5 01-Jul-2013 6 03-Apr-2020 7 Updated package information. Added Section 1.3 ESD protection characteristics. 14-Jul-2020 8 Modified Table 4. Static. Updated Figure 7: Maximum safe operating area. Added Figure 8: Transient thermal impedance. and Figure 9: Transient thermal model. Updated Chapter 7: Package mechanical data. Added Chapter 8: Marking, packing and shipping specifications. Update values for L and M in Table 9: STAC244B mechanical data. Modified pin labeling in Figure 1: Pin connection. Minor text corrections throughout document. page 14/16 STAC3932B Contents Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.3 ESD protection characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Static. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Impedances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 6 5.1 Electrical schematic and BOM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5.2 Board and layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 6.1 STAC780-4B package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6.2 Marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 DS6157 - Rev 8 page 15/16 STAC3932B IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS6157 - Rev 8 page 16/16
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