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STAC4932B

STAC4932B

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    STAC244B

  • 描述:

    TRANSISTOR RF MOSF N-CH STAC244B

  • 数据手册
  • 价格&库存
STAC4932B 数据手册
STAC4932B Datasheet HF/VHF/UHF RF power N-channel MOSFET Features 1 1 2 3 3 STAC780-4B Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Order code Frequency VDD POUT Gain Efficiency STAC4932B 123 MHz 100 V 1000 W 24.6 dB 60 % • • • Excellent thermal stability Common source push-pull configuration POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • • • Pulse conditions: 1ms, 10% In compliance with the 2002/95/EC European directive ST air-cavity STAC package technology Description The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC package technology. Product status STAC4932B Product summary Order code STAC4932B Marking STAC4932 Package STAC780-4B Packing Box Base / Bulk qty 20 / 80 DS6724 - Rev 8 - April 2020 For further information contact your local STMicroelectronics sales office. www.st.com STAC4932B Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (TCASE = 25 °C) Symbol V(BR)DSS V DGR V GS TJ T STG 1.2 Parameter Value Unit Drain source voltage (VGS = 0 V, TJ = 150 °C) 200 V Drain-gate voltage (R GS= 1 MΩ) 200 V Gate-source voltage ±20 V Maximum operating junction temperature 200 °C -65 to +150 °C Value Unit 0.075 °C/W Storage temperature range Thermal data Table 2. Thermal data (1ms, 10%) Symbol R thJC 1.3 Parameter Junction - case thermal resistance ESD protection characteristics Table 3. ESD protection Symbol HBM DS6724 - Rev 8 Test Methodology Human Body Model (per JESD22-A114) Class 2 page 2/13 STAC4932B Electrical characteristics 2 Electrical characteristics ( TCASE= +25 °C, unless otherwise noted) 2.1 Static Table 4. Static Symbol V(BR)DSS Drain-source breakdown voltage Test conditions VGS = 0 V, IDS = 100 mA, TJ = 150 °C Min. Typ. 200 250 Max. Unit V IDSS Zero gate voltage drain leakage current VGS = 0 V, VDS = 100 V 1 mA IGSS Gate-source leakage current VGS = 20 V, VDS = 0 V 250 nA Drain-source on voltage VGS = 10 V, ID = 10 A 3.6 V VTH Gate-source threshold voltage IDS = 250 mA 4 V GFS Forward transconductance VDS = 10 V, ID = 2.5 A CISS Input capacitance COSS Ouput capacitance CRSS Reverse transfer capacitance VDS(ON) 2.2 Parameter 2 VGS = 0 V, VDS = 100 V, f = 1 MHz 6 S 570 pF 134 pF 8 pF Dynamic Table 5. Dynamic (1) Symbol POUT Parameter Test conditions Output power Min. Typ. Max. Unit 1000 1200 - W ŋD Drain efficiency POUT = 1000 W 60 - % Gps Power gain POUT = 1000 W 26 - dB 1. VDD = 100 V, IDQ = 2 x 250 mA, f = 123 MHz, PW 1ms, DC = 10% DS6724 - Rev 8 page 3/13 STAC4932B Impedance 3 Impedance Figure 1. Current conventions D ZDL Typical input impedance G Typical load impedance ZIN S Table 6. Impedance data Note: DS6724 - Rev 8 Freq. (MHz) Z IN(Ω) Z DL(Ω) 123 MHz (pulsed) 1.3 - j 2.8 7.7 - j 9.4 Measured gate-to-gate and drain-to-drain, respectively (balanced configuration). page 4/13 STAC4932B Typical performance 4 Typical performance Figure 2. Safe operating area 100 n) Max Drain Current - Id (A) s(o e mit li tion a r e 10 d yR b d 1ms Op 10ms DC 1 Single Pulse Tcase = +25 °C / Tj = +200°C 0 1 10 100 Drain supply voltage 1000 - Vdd (V) AM01107v1 Figure 3. Transient thermal impedance Single - Repetitive pulse Thermal Impedance Zth j-c (°C/W) 0.30 AM06094v1 0.25 single pulse 0.20 0.1 0.2 0.15 0.3 0.4 0.5 0.10 0.6 0.7 0.8 0.05 0.9 0.00 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Rectangular power pulse width (s) DS6724 - Rev 8 page 5/13 STAC4932B Typical performance Figure 4. Transient thermal model AM06106V1 Figure 5. Power gain vs. output power 30 28 Power gain (dB) 26 24 22 F = 123 MHz 20 IDQ = 2 x 100 mA 18 Pulse width = 1ms 16 100V 90V Duty cycle = 10% 14 12 0 100 200 300 400 500 600 700 800 Output power(W) DS6724 - Rev 8 900 1000 110 0 1200 1300 AM06084v1 page 6/13 STAC4932B Typical performance Figure 6. Efficiency vs. output power Efficiency (%) 80 70 F = 123 MHz 60 IDQ = 2 x 100 mA Pulse width = 1ms 50 Duty cycle = 10% 40 30 20 100V 90V 10 0 0 100 200 300 400 500 600 700 800 Output power (W) DS6724 - Rev 8 900 1000 110 0 1200 1300 AM06085v1 page 7/13 STAC4932B Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 5.1 STAC780-4B package information Figure 7. STAC780-4B package outline DM00481937 rev.2 DS6724 - Rev 8 page 8/13 STAC4932B STAC780-4B package information Table 7. STAC780-4B mechanical data Symbol DS6724 - Rev 8 Milimeters Min Typ Max A 3.76 3.86 A1 5.03 5.13 B 4.57 5.08 C 9.65 9.91 D 17.78 18.08 E 33.88 34.19 F 0.13 0.18 G 0.97 1.14 H 1.52 1.70 I 4.83 5.33 J 9.52 9.78 K 27.69 28.19 L 3.20 3.25 3.30 M 3.43 3.51 3.58 M 3.30 3.38 3.45 p 7.14 7.21 7.29 q 1.45 R1 0.64 R2 1.52 r 1.52 s 0.51 Θ 10° CH1 2.03 CH2 1.52 page 9/13 STAC4932B Marking information 5.2 Marking information LEGEND PACKAGE FACE : TOP Marking Composition Field A - MARKING AREA B - ST LOGO C - Assy Plant (PP) D - BE Sequence (LLL) A B C F D E G H I E - Diffusion Traceability Plant (WX) F - COUNTRY OF ORIGIN (MAX CHAR ALLOWED = 3) G - Test & Finishing Plant (TF) H - Assy Year (Y) I - Assy Week (WW) DS6724 - Rev 8 page 10/13 STAC4932B Revision history Table 8. Document revision history Date Revision Changes 19-Feb-2010 1 First release. 26-May-2010 2 Document status promoted from preliminary data to datasheet. 03-Aug-2010 3 Updated description on cover page and Table 3. 03-Sep-2010 4 Updated figures: 3, 4 and 5. Inserted new Section 6: Marking, packing and shipping specifications. 12-Sep-2011 5 Updated Table 6. Minor text changes. Modified pin labeling in Figure 1: Pin connection. 01-Jul-2013 6 Modified document title. Minor text corrections throughout document. DS6724 - Rev 8 27-Jan-2014 7 Modified pin labeling in Figure 1: Pin connection. 09-Apr-2020 8 Updated package information. Added Section 1.3 ESD protection characteristics. page 11/13 STAC4932B Contents Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.3 ESD protection characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Static. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.1 STAC780-4B package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.2 Marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS6724 - Rev 8 page 12/13 STAC4932B IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS6724 - Rev 8 page 13/13
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