STAC4932F

STAC4932F Datasheet RF power transistors HF/VHF/UHF N-channel MOSFET Features 1 1 3 2 3 STAC780-4F Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Order code Frequency VDD POUT Gain Efficiency STAC4932F 123 MHz 100 V 1000 W 26 dB 60 % • • • Excellent thermal stability Common source push-pull configuration POUT = 1000 W min. (1200 W typ.) with 26 dB gain at 123 MHz • • • Pulse conditions: 1ms, 10% In compliance with the 2002/95/EC European directive ST air-cavity STAC packaging technology Description The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC. Product status link STAC4932F Product summary Order code STAC4932F Marking STAC4932F Package STAC780-4F Packing Box Base / Bulk qty 20 / 80 DS6726 - Rev 4 - April 2020 For further information contact your local STMicroelectronics sales office. www.st.com STAC4932F Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (TCASE = 25 °C) Symbol V(BR)DSS VDGR VGS TJ TSTG 1.2 Parameter Value Unit Drain source voltage (VGS = 0 V, TJ = 150 °C) 200 V Drain-gate voltage (RGS = 1 MΩ) 200 V Gate-source voltage ±20 V Maximum operating junction temperature 200 °C -65 to +150 °C Value Unit 0.075 °C/W Storage temperature range Thermal data Table 2. Thermal data (1ms, 10%) Symbol RthJC 1.3 Parameter Junction-case thermal resistance ESD protection characteristics Table 3. ESD protection Symbol HBM DS6726 - Rev 4 Test Methodology Human Body Model (per JESD22-A114) Class 2 page 2/13 STAC4932F Electrical characteristics 2 Electrical characteristics TCASE = +25 °C (unless otherwise specified) 2.1 Static Table 4. Static Symbol V(BR)DSS Drain - source Breakdown voltage Test conditions VGS = 0 V, IDS = 100 mA, TJ = 150 °C IDSS Zero gate voltage drain leakage current IGSS Gate - source leakage current VGS = 20 V, VDS = 0 V VTH Gate - source threshold voltage IDS = 250 mA Drain - source on voltage VGS = 10 V, ID = 10 A GFS Forward transconductance VDS = 10 V, ID = 2.5 A CISS Input capacitance COSS Ouput capacitance CRSS Reverse transfer capacitance VDS(ON) 2.2 Parameter Min. Typ. 200 250 VGS = 0 V, VDS = 100 V 2 VGS = 0 V, VDS = 100 V, f = 1 MHz Max. Unit V 1 mA 250 nA 4 V 3.6 V 6 S 570 pF 134 pF 8 pF Dynamic Table 5. Dynamic (1) Symbol POUT Parameter Test conditions Output power Min. Typ. Max. Unit 1000 1200 - W ŋD Drain efficiency POUT = 1000 W 60 - % Gps Power gain POUT = 1000 W 26 - dB 1. VDD = 100 V, IDQ = 2 x 250 mA, f = 123 MHz, PW 1ms, DC = 10% DS6726 - Rev 4 page 3/13 STAC4932F Impedance 3 Impedance Figure 1. Current conventions GADG170720191138MT Table 6. Impedance data Note: DS6726 - Rev 4 Freq. (MHz) ZIN (Ω) ZDL(Ω) 123 TBD 7.63 + j 2.92 Measured gate-to-gate and drain-to-drain, respectively (balanced configuration). page 4/13 STAC4932F Typical performance 4 Typical performance Figure 2. Safe operating area 100 ) Max Drain Current - Id (A) on b ted imi y s( Rd nl tio era 10 1ms Op 10ms DC 1 Single Pulse Tcase = +25 °C / Tj = +200°C 0 1 10 100 1000 Drain supply voltage - Vdd (V) AM01107v1 Figure 3. Transient thermal impedance Single - Repetitive pulse Thermal Impedance Zth j-c (°C/W) 0.30 AM06094v1 0.25 single pulse 0.20 0.1 0.2 0.15 0.3 0.4 0.5 0.10 0.6 0.7 0.8 0.05 0.9 0.00 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Rectangular power pulse width (s) DS6726 - Rev 4 page 5/13 STAC4932F Typical performance Figure 4. Transient thermal model R R7 R=0.0142593 Ohm C C8 C=0.0042078 F R R8 R=.0427778 Ohm C C7 C=0.0032727 F R R6 R=.1425926 Ohm C C6 C=0.0444624 F R R5 R=.0803704 Ohm C C5 C=0.2960046 F AM06106v1 DS6726 - Rev 4 page 6/13 STAC4932F Typical performance Figure 5. Power gain versus output power 30 28 Power gain (dB) 26 24 22 F = 123 MHz 20 IDQ = 2 x 100 mA 18 Pulse width = 1ms 16 100V 90V Duty cycle = 10% 14 12 0 100 200 300 400 500 600 700 800 900 1000 110 0 1200 1300 Output power(W) AM06084v1 Figure 6. Efficiency versus output power Efficiency (%) 80 70 F = 123 MHz 60 IDQ = 2 x 100 mA Pulse width = 1ms 50 Duty cycle = 10% 40 30 20 100V 90V 10 0 0 100 200 300 400 500 600 700 800 Output power (W) DS6726 - Rev 4 900 1000 110 0 1200 1300 AM06085v1 page 7/13 STAC4932F Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 5.1 STAC780-4F package information Figure 7. STAC780-4F package outline DM00481940-1 DS6726 - Rev 4 page 8/13 STAC4932F STAC780-4F package information Table 7. STAC780-4F mechanical data Ref. DS6726 - Rev 4 Milimeters Min. Typ. Max. A 3.76 3.86 A1 5.03 5.13 B 4.57 5.08 C 9.65 9.91 D 20.17 20.37 E 20.45 20.70 F 0.11 0.17 G 0.97 1.14 H 1.52 1.70 I 3.18 4.32 J 9.52 9.78 q 1.37 r 1.52 s 0.51 CH1 2.03 page 9/13 STAC4932F Marking information 5.2 Marking information LEGEND PACKAGE FACE TOP : Marking Composition Field A - MARKING AREA B - ADDITIONAL INFORMATION (MAX CHAR ALLOWED = 1) A B C D E C - STANDARD ST LOGO D - Assy Plant (PP) F E - FE Sequence (nnn) G H I J F - Diffusion Traceability Plant (WX) G - COUNTRY OF ORIGIN (MAX CHAR ALLOWED = 3) H - Test and Finishing Plant (TF) I - Assy Year (Y) J - Assy Week (WW) DS6726 - Rev 4 page 10/13 STAC4932F Revision history Table 8. Document revision history DS6726 - Rev 4 Date Version Changes 22-Feb-2010 1 First release. 03-Aug-2010 2 Updated description on cover page and Table 3. 02-Sep-2010 3 10-Apr-2020 4 Updated Figure 8. Added Figure 3, 4 and 5. Updated package information. Added Section 1.3 ESD protection characteristics. page 11/13 STAC4932F Contents Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.3 ESD protection characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.1 STAC780-4F package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5.2 Marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS6726 - Rev 4 page 12/13 STAC4932F IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS6726 - Rev 4 page 13/13