STB100N6F7
N-channel 60 V, 4.7 mΩ typ.,100 A STripFET™ F7
Power MOSFET in a D²PAK package
Datasheet - production data
Features
7$%
Order code
VDS
RDS(on) max.
STB100N6F7
60 V
5.6 mΩ
ID
PTOT
100A 125 W
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
'3$.
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
' 7$%
*
6
$0Y
Table 1. Device summary
Order code
Marking
Package
Packaging
STB100N6F7
100N6F7
D²PAK
Tape and Reel
January 2015
This is information on a product in full production.
DocID027210 Rev 2
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www.st.com
Contents
STB100N6F7
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
100
A
ID
Drain current (continuous) at TC = 100 °C
75
A
Drain current (pulsed)
400
A
Total dissipation at TC = 25 °C
125
W
EAS
Single pulse avalanche energy
200
mJ
Tj
Operating junction temperature
- 55 to 175
°C
Value
Unit
IDM
(1)
PTOT
(2)
Tstg
Storage temperature
1. Pulse width is limited by safe operating area
2. Starting Tj =25 °C, ID = 20 A, VDD = 30 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
1.2
°C/W
Rthj-pcb(1)
thermal resistance junction-pcb
30
°C/W
1. When mounted on FR-4 board of 1inch², 2oz Cu
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Electrical characteristics
2
STB100N6F7
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
60
Unit
V
VGS = 0 V, VDS = 60 V
1
µA
VGS = 0 V, VDS = 60 V,
TJ = 125 °C
100
µA
100
nA
4
V
4.7
5.6
mΩ
Min.
Typ.
Max.
Unit
-
1980
-
pF
-
970
-
pF
-
86
-
pF
-
30
-
nC
-
12.6
-
nC
-
5.9
-
nC
Min.
Typ.
Max.
Unit
-
21.6
-
ns
-
55.5
-
ns
-
28.6
-
ns
-
15
-
ns
IDSS
Zero gate voltage
Drain current
IGSS
Gate-source leakage
current
VDS = 0 V, VGS = 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
VGS =10 V, ID = 50 A
2
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VGS = 0 V, VDS = 25V,
f = 1 MHz
VDD = 30 V, ID = 100 A,
VGS = 10 V
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
4/15
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
VDD = 30 V, ID = 50 A,
RG = 4.7 Ω, VGS = 10 V
Fall time
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STB100N6F7
Electrical characteristics
Table 7. Source drain diode
Symbol
VSD (1)
trr
Parameter
Test conditions
Forward on voltage
VGS = 0 V, ISD = 100A
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 100 A, di/dt = 100 A/µs,
VDD = 48 V
Min.
Typ. Max.
-
1.2
Unit
V
-
48.4
ns
-
47
nC
-
2.0
A
1. Pulse test: pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
2.1
STB100N6F7
Electrical characteristics (curves)
Figure 2. Safe operating area
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Figure 3. Thermal impedance
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Figure 4. Output characteristics
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Figure 5. Transfer characteristics
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Figure 6. Gate charge vs gate-source voltage
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Figure 7. Static drain-source on-resistance
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DocID027210 Rev 2
,' $
STB100N6F7
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
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Figure 10. Normalized on-resistance vs
temperature
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7- &
Figure 11. Source-drain diode forward
characteristics
96'
9
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7- &
7- &
7- &
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Figure 12. Normalized V(BR)DSS vs temperature
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7- &
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Test circuits
3
STB100N6F7
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 16. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/15
0
DocID027210 Rev 2
10%
AM01473v1
STB100N6F7
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 19. D²PAK (TO-263) drawing
B9
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Package mechanical data
STB100N6F7
Table 8. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
10/15
Max.
0.4
0°
8°
DocID027210 Rev 2
STB100N6F7
Package mechanical data
Figure 20. D²PAK footprint(a)
)RRWSULQW
a. All dimension are in millimeters
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Packing mechanical data
5
STB100N6F7
Packing mechanical data
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DocID027210 Rev 2
STB100N6F7
Packing mechanical data
Figure 22. Reel
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Table 9. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID027210 Rev 2
Min.
Max.
330
13.2
26.4
30.4
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Revision history
6
STB100N6F7
Revision history
Table 10. Document revision history
Date
Revision
26-Nov-2014
1
First release.
2
Text amendments throughout document
On cover page:
Changed title description
Changed features and descriptions
Updated Table 2: Absolute maximum ratings
Updated Table 4: On/off states
Updated Table 5: Dynamic
Updated Table 6: Switching times
Updated Table 7: Source drain diode
Added Section 2.1: Electrical characteristics (curves)
Updated Section 4: Package mechanical data
14-Jan-2015
14/15
Changes
DocID027210 Rev 2
STB100N6F7
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