STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK
MDmesh™Power MOSFET
TYPE
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
VDSS
RDS(on)
600 V
600 V
600 V
600 V
< 0.45
< 0.45
< 0.45
< 0.45
Ω
Ω
Ω
Ω
ID
11 A
11 A
11 A
11 A
TYPICAL RDS(on) = 0.4Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
3
3
1
2
1
TO-220
TO-220FP
3
3
12
1
2
I2PAK
D PAK
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
2
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP(B)11NM60(-1)
VDS
VDGR
VGS
Unit
STP11NM60FP
Drain-source Voltage (VGS = 0)
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
11
11 (*)
A
ID
Drain Current (continuous) at TC = 100°C
7
7 (*)
A
Drain Current (pulsed)
44
44 (*)
A
Total Dissipation at TC = 25°C
160
35
W
Derating Factor
1.28
0.28
W/°C
IDM ()
PTOT
dv/dt(1)
Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2003
15
--
V/ns
2500
V
–65 to 150
°C
150
°C
(*)Limited only by maximum temperature allowed
(1)ISD
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