STB12NM50T4

STB12NM50T4, STP12NM50, STP12NM50FP Datasheet N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs in a D²PAK, TO-220 and TO-220FP packages Features TAB Order codes 3 1 D2 PAK 1 2 RDS(on) max. ID 500 V 350 mΩ 12 A STB12NM50T4 3 TO-220FP TAB VDS STP12NM50 STP12NM50FP 1 2 3 • • • TO-220 D(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications • G(1) Switching applications Description S(3) NG1D2TS3 These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Product status link STB12NM50T4 STP12NM50 STP12NM50FP DS1944 - Rev 12 - October 2020 For further information contact your local STMicroelectronics sales office. www.st.com STB12NM50T4, STP12NM50, STP12NM50FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Value Parameter D²PAK, TO-220 Gate-source voltage TO-220FP Unit V ±30 Drain current (continuous) at TC = 25 °C 12 12(1) Drain current (continuous) at TC = 100 °C 7.5 7.5(1) IDM(2) Drain current pulsed 48 48(1) A PTOT Total power dissipation at TC = 25 °C 160 35 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV ID dv/dt(3) TJ Tstg Peak diode recovery voltage slope 15 Operating junction temperature range V/ns °C -65 to 150 Storage temperature range A °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Rthj-case Rthj-a Rthj-pcb(1) Parameter Value D²PAK Thermal resistance junction-case 2.78 Thermal resistance junction-ambient Thermal resistance junction-pcb TO-220 TO-220FP 3.57 62.5 35 Unit °C/W °C/W °C/W 1. When mounted on an 1-inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol IAS EAS DS1944 - Rev 12 Parameter Avalanche current, repetitive or not repetitive (pulse width limited by TJ max) Single-pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) Value Unit 6 A 400 mJ page 2/20 STB12NM50T4, STP12NM50, STP12NM50FP Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions Min. VGS = 0 V, ID = 250 μA Typ. 500 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±30 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6 A VGS = 0 V, VDS = 500 V, TC = 125 °C Unit V VGS = 0 V, VDS = 500 V IDSS Max. 1 (1) 10 µA ±100 nA 4 5 V 300 350 mΩ Min. Typ. Max. Unit - 1000 - pF - 250 - pF - 20 - pF 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss VDS = 25 V, f = 1 MHz, VGS = 0 V Reverse transfer capacitance (1) Coss eq. td(on) Test conditions Equivalent output capacitance VDS = 0 to 400 V, VGS = 0 V - 90 - pF Turn-on Delay Time VDD = 250 V, ID = 6 A, - 20 - ns - 10 - ns - 28 - nC - 8 - nC - 16 - nC - 1.6 - Ω RG = 4.7 Ω, VGS = 10 V tr Rise Time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) VDD = 400 V, ID = 12 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) f = 1 MHz, gate DC Bias = 0, test signal level = 20 mV, open drain 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. DS1944 - Rev 12 page 3/20 STB12NM50T4, STP12NM50, STP12NM50FP Electrical characteristics Table 6. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 12 A ISDM (1) Source-drain current (pulsed) - 48 A VSD (2) Forward on voltage VGS = 0 V, ISD = 12 A - 1.5 V trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, - 270 ns Qrr Reverse recovery charge VDD = 100 V - 2.23 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 16.5 A trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, - 340 ns Qrr Reverse recovery charge VDD = 100 V, TJ = 150 °C - 3 µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 18 A IRRM 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS1944 - Rev 12 page 4/20 STB12NM50T4, STP12NM50, STP12NM50FP Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for D²PAK and TO-220 Figure 2. Thermal impedance for D²PAK and TO-220 HV27510 Figure 3. Safe operating area for TO-220FP HV27450 Figure 4. Thermal impedance for TO-220FP GC20521 K δ=0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 Zth= K*R thJ-c δ =t p/Ƭ Single pulse 10-3 10-4 Figure 5. Output characteristics HV00002 DS1944 - Rev 12 tp 10 -3 10 -2 10 -1 Ƭ 10-0 tp(s) Figure 6. Transfer characteristics HV00003 page 5/20 STB12NM50T4, STP12NM50, STP12NM50FP Electrical characteristics (curves) Figure 7. Static drain-source on-resistance HV00004 Figure 9. Capacitance variations GC85600 Figure 11. Normalized on resistance vs temperature GC85610 DS1944 - Rev 12 Figure 8. Gate charge vs gate-source voltage HV00005 Figure 10. Normalized gate threshold voltage vs temperature GC74100 Figure 12. Source-drain diode forward characteristics GC85620 page 6/20 STB12NM50T4, STP12NM50, STP12NM50FP Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD VGS AM01472v1 0 VDS 10% 90% 10% AM01473v1 DS1944 - Rev 12 page 7/20 STB12NM50T4, STP12NM50, STP12NM50FP Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D²PAK (TO-263) type A package information Figure 19. D²PAK (TO-263) type A package outline 0079457_26 DS1944 - Rev 12 page 8/20 STB12NM50T4, STP12NM50, STP12NM50FP D²PAK (TO-263) type A package information Table 7. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS1944 - Rev 12 Typ. 0.40 0° 8° page 9/20 STB12NM50T4, STP12NM50, STP12NM50FP D²PAK (TO-263) type A package information Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint_26 DS1944 - Rev 12 page 10/20 STB12NM50T4, STP12NM50, STP12NM50FP TO-220 type A package information 4.2 TO-220 type A package information Figure 21. TO-220 type A package outline 0015988_typeA_Rev_23 DS1944 - Rev 12 page 11/20 STB12NM50T4, STP12NM50, STP12NM50FP TO-220 type A package information Table 8. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 Slug flatness DS1944 - Rev 12 Typ. 0.03 0.10 page 12/20 STB12NM50T4, STP12NM50, STP12NM50FP TO-220FP package information 4.3 TO-220FP package information Figure 22. TO-220FP package outline 7012510_Rev_13_B DS1944 - Rev 12 page 13/20 STB12NM50T4, STP12NM50, STP12NM50FP TO-220FP package information Table 9. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS1944 - Rev 12 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 14/20 STB12NM50T4, STP12NM50, STP12NM50FP D²PAK packing information 4.4 D²PAK packing information Figure 23. D²PAK tape outline DS1944 - Rev 12 page 15/20 STB12NM50T4, STP12NM50, STP12NM50FP D²PAK packing information Figure 24. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. D²PAK tape and reel mechanical data Tape Dim. DS1944 - Rev 12 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 16/20 STB12NM50T4, STP12NM50, STP12NM50FP Ordering information 5 Ordering information Table 11. Order codes DS1944 - Rev 12 Order codes Marking Package Packing STB12NM50T4 B12NM50 D²PAK Tape and reel STP12NM50 P12NM50 TO-220 Tube STP12NM50FP P12NM50FP TO-220FP Tube page 17/20 STB12NM50T4, STP12NM50, STP12NM50FP Revision history Table 12. Document revision history Date Revision Changes 14-Mar-2004 8 Preliminary version 15-Feb-2006 9 New voltage value on first page at tjmax. 05-Apr-2006 10 Inserted ecopack indication 27-Jul-2006 11 New template, no content change The part number STB12NM50-1 have been moved to a separate datasheet and the document has been updated accordingly. Updated cover page. 22-Oct-2020 12 Updated Section 1 Electrical ratings and Section 2 Electrical characteristics. Added Section Section 5 Ordering information. Minor text changes. DS1944 - Rev 12 page 18/20 STB12NM50T4, STP12NM50, STP12NM50FP Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 5 4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.4 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 DS1944 - Rev 12 page 19/20 STB12NM50T4, STP12NM50, STP12NM50FP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS1944 - Rev 12 page 20/20