STB13NM60N

STB13NM60N, STD13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages Datasheet — production data Features Order code VDS (@Tjmax) STB13NM60N TAB 650 V TAB ID 0.36 Ω 11 A STD13NM60N • 100% avalanche tested 3 3 1 1 • Low input capacitance and gate charge DPAK D²PAK RDS(on) max • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic diagram Description 'RU7$% These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. * 6 6& Table 1. Device summary Order code Marking Packages STB13NM60N D²PAK 13NM60N STD13NM60N June 2015 This is information on a product in full production. Packaging Tape and reel DPAK DocID024095 Rev 3 1/24 www.st.com Contents STB13NM60N, STD13NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .............................. 6 3 Test circuits .............................................. 9 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 DPAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2/24 DocID024095 Rev 3 STB13NM60N, STD13NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 11 A ID Drain current (continuous) at TC = 100 °C 6.93 A Drain current (pulsed) 44 A Total dissipation at TC = 25 °C 90 W Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C IDM (1) PTOT dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Thermal data Value Symbol Parameter Unit D²PAK Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max DPAK 1.39 30 °C/W 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 3.5 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 200 mJ DocID024095 Rev 3 3/24 24 Electrical characteristics 2 STB13NM60N, STD13NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0, ID = 1 mA Min. Typ. Max. Unit 600 V VGS = 0, VDS = 600 V 1 µA VGS = 0, VDS = 600 V, TC=125 °C 100 µA Gate-body leakage current VDS = 0, VGS = ± 25 V ± 0.1 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 5.5 A 0.28 0.36 Ω Min. Typ. Max. Unit - 790 - pF - 60 - pF - 3.6 - pF VGS = 0, VDS = 0 to 480 V - 135 - pF - 27 - nC - 4 - nC - 14 - nC - 4.7 - Ω IDSS Zero gate voltage drain current IGSS 2 Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD = 480 V, ID = 11 A, VGS = 10 V, (see Figure 16) RG Gate input resistance f=1 MHz open drain VGS = 0, VDS = 50 V, f = 1 MHz 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Table 7. Switching times Symbol td(on) tr td(off) tf 4/24 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 300 V, ID = 5.5 A RG = 4.7 Ω VGS = 10 V (see Figure 15) Fall time DocID024095 Rev 3 Min. Typ. Max. Unit - 3 - ns - 8 - ns - 30 - ns - 10 - ns STB13NM60N, STD13NM60N Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max. Unit Source-drain current - 11 A ISDM (1) Source-drain current (pulsed) - 44 A VSD (2) Forward on voltage ISD = 11 A, VGS = 0 - 1.5 V trr Reverse recovery time - 230 ns Qrr Reverse recovery charge - 2 µC IRRM Reverse recovery current ISD = 11 A, di/dt = 100 A/µs VDD = 100 V (see Figure 17) - 18 A - 290 ns - 2.5 µC - 17 A ISD trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 11 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 17) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024095 Rev 3 5/24 24 Electrical characteristics 2.1 STB13NM60N, STD13NM60N Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK Figure 3. Thermal impedance for D²PAK AM03258v1 ai s ID (A) Op Lim erat ite ion d b in y m this ax ar R e DS (o n) 10 1 0.1 0.1 10µs 100µs Tj=150°C Tc=25°C 1ms Sinlge pulse 10ms 10 1 100 VDS(V) Figure 4. Safe operating area for DPAK Figure 5. Thermal impedance for DPAK $0Y ,' $  LV —V 6 RQ 2S /LP HUD LWH WLRQ G LQ E\ WK P LV D[ DU 5 HD '      —V 7M ƒ& 7F ƒ& PV 6LQJOH SXOVH PV    9'69 Figure 6. Output characteristics ,' $ $0Y 9*6 9              6/24 Figure 7. Transfer characteristics 9 9    9'6 9   9  $0Y ,' $  9'69            DocID024095 Rev 3      9*69 STB13NM60N, STD13NM60N Electrical characteristics Figure 8. Normalized V(BR)DSS vs temperature AM09028v1 V(BR)DSS (norm) ID=1mA 1.10 Figure 9. Static drain-source on-resistance AM03302v1 RDS(on) (Ω) 0.30 1.08 1.06 VGS=10V 0.28 1.04 1.02 0.26 1.00 0.24 0.98 0.96 0.22 0.94 0.92 -50 -25 0 25 75 100 50 Figure 10. Gate charge vs gate-source voltage AM03305v1 VGS (V) VDS(V) VDD=480V 12 4 2 6 10 8 ID(A) Figure 11. Capacitance variations $0Y & S) 500 ID=11A VDS 0.2 0 TJ(°C)  10 &LVV 400 8 300  6 &RVV 200 4  100 2 0 0 20 10 30   0 Qg(nC) Figure 12. Normalized gate threshold voltage vs temperature AM03306v1 VGS(th) (norm) 1.10 &UVV    9'69 Figure 13. Normalized on-resistance vs temperature AM03307v1 RDS(on) (norm) 2.1 ID=250µA ID=5.5A VGS=10V 1.9 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 DocID024095 Rev 3 0 25 50 75 100 TJ(°C) 7/24 24 Electrical characteristics STB13NM60N, STD13NM60N Figure 14. Source-drain diode forward characteristics AM09290v1 VSD (V) TJ=-50°C TJ=25°C 1.2 1.0 TJ=150°C 0.8 0.6 0.4 0 8/24 2 4 6 8 10 ISD(A) DocID024095 Rev 3 STB13NM60N, STD13NM60N 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID024095 Rev 3 10% AM01473v1 9/24 24 Package information 4 STB13NM60N, STD13NM60N Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D2PAK package information Figure 21. D²PAK (TO-263) type A package outline B$BUHY 10/24 DocID024095 Rev 3 STB13NM60N, STD13NM60N Package information Table 9. D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° DocID024095 Rev 3 11/24 24 Package information STB13NM60N, STD13NM60N Figure 22. D²PAK (TO-263) type B package outline B%BUHY 12/24 DocID024095 Rev 3 STB13NM60N, STD13NM60N Package information Table 10. D²PAK (TO-263) type B package mechanical data mm Dim. Min. Typ. Max. A 4.36 4.60 A1 0 0.25 b 0.70 0.93 b2 1.14 1.70 c 0.38 0.694 c1 0.38 0.534 c2 1.19 1.36 D 8.6 9.35 D1 6.9 E 10 E1 8.1 10.55 e 2.54 H 15 15.85 L 1.9 2.79 L1 1.65 L2 1.78 L3 L4 0.25 4.78 5.28 DocID024095 Rev 3 13/24 24 Package information STB13NM60N, STD13NM60N Figure 23. D²PAK footprint(a) )RRWSULQW a. All dimension are in millimeters 14/24 DocID024095 Rev 3 STB13NM60N, STD13NM60N 4.2 Package information DPAK package information Figure 24. DPAK (TO-252) type A2 package outline BW\SH$BUHY DocID024095 Rev 3 15/24 24 Package information STB13NM60N, STD13NM60N Table 11. DPAK (TO-252) type A2 package mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 5.10 V2 5.25 6.60 1.00 R 16/24 Max. 0.20 0° 8° DocID024095 Rev 3 STB13NM60N, STD13NM60N Package information Figure 25. DPAK (TO-252) type C2 outline  “   ¡ BBW\SHB& DocID024095 Rev 3 17/24 24 Package information STB13NM60N, STD13NM60N Table 12. DPAK (TO-252) type C2 package mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 6.10 6.20 D1 5.25 - - E 6.50 6.60 6.70 E1 5.20 - - e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 0.90 - 1.25 0.51 BSC 0.60 L6 18/24 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC Θ1 5° 7° 9° Θ2 5° 7° 9° V2 0° 8° DocID024095 Rev 3 STB13NM60N, STD13NM60N Package information Figure 26. DPAK (TO-252) footprint (b) )3B4 b. All dimensions are in millimeters DocID024095 Rev 3 19/24 24 Packing information 5 STB13NM60N, STD13NM60N Packing information Figure 27. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 20/24 DocID024095 Rev 3 STB13NM60N, STD13NM60N Packing information Figure 28. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024095 Rev 3 Min. Max. 330 13.2 26.4 30.4 21/24 24 Packing information STB13NM60N, STD13NM60N Table 14. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 22/24 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID024095 Rev 3 18.4 22.4 STB13NM60N, STD13NM60N 6 Revision history Revision history Table 15. Document revision history Date Revision Changes 18-Dec-2012 1 First release 10-Jul-2014 2 – Updated: Section 3: Test circuits – Updated: Section 4: Package information – Minor text changes 19-Jun-2015 3 – Updated 4: Package information – Minor text changes DocID024095 Rev 3 23/24 24 STB13NM60N, STD13NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 24/24 DocID024095 Rev 3