STB14NM50N
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II
Power MOSFET in a D²PAK package
Datasheet - production data
Features
Order code
VDS @ TJmax RDS(on) max
STB14NM50N
550 V
0.32 Ω
ID
12 A
TAB
• 100% avalanche tested
• Low input capacitance and gate charge
3
• Low gate input resistance
1
D2PAK
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
'Ć7$%
*
6
$0Y
Table 1. Device summary
Order code
Marking
Package
Packaging
STB14NM50N
14NM50N
D²PAK
Tape and reel
June 2014
This is information on a product in full production.
DocID024666 Rev 1
1/15
www.st.com
Contents
STB14NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
DocID024666 Rev 1
STB14NM50N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
12
A
ID
Drain current (continuous) at TC = 100 °C
8
A
Drain current (pulsed)
48
A
Total dissipation at TC = 25 °C
90
W
Peak diode recovery voltage slope
15
V/ns
- 55 to 150
°C
150
°C
Value
Unit
1.39
°C/W
30
°C/W
IDM
(1)
PTOT
dv/dt
(2)
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤ 12 A, di/dt ≤ 400 A/s,VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb
(1)
Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Table 4. Avalanche data
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
4
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
172
mJ
DocID024666 Rev 1
3/15
15
Electrical characteristics
2
STB14NM50N
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current
Gate-body leakage
current
Test conditions
VGS = 0, ID = 1 mA
Min.
Typ.
Max.
Unit
500
V
VGS = 0, VDS = 500 V
1
μA
VGS = 0, VDS = 500 V,
TC=125 °C
100
μA
VDS = 0, VGS = ± 25 V
± 100
nA
3
4
V
0.28
0.32
Ω
Min.
Typ.
Max.
Unit
-
816
-
pF
-
60
-
pF
-
3
-
pF
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 μA
RDS(on)
Static drain-source
on-resistance
2
VGS = 10 V, ID = 6 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq. (1)
Equivalent output
capacitance
VGS = 0, VDS = 0 to 50 V
-
157
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
4.5
-
Ω
Qg
Total gate charge
-
27
-
nC
-
5
-
nC
-
15
-
nC
VGS = 0, VDS = 50 V, f = 1 MHz
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD =400 V, ID =12 A,
VGS =10 V (see Figure 13)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
4/15
DocID024666 Rev 1
STB14NM50N
Electrical characteristics
Table 7. Switching times
Symbol
td(on)
tr
Parameter
Test conditions
Turn-on delay time
VDD = 400 V, ID = 12 A,
RG =4.7 Ω, VGS = 10 V
(see Figure 13)
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Min.
Typ.
Max. Unit
-
12
-
ns
-
16
-
ns
-
42
-
ns
-
22
-
ns
Min.
Typ.
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Max. Unit
Source-drain current
-
12
A
ISDM
(1)
Source-drain current (pulsed)
-
48
A
VSD
(2)
Forward on voltage
-
1.6
V
ISD
VGS = 0, ISD = 12 A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 12 A, di/dt = 100 A/μs,
VDD = 60 V
(see Figure 17)
ISD = 12 A, di/dt = 100 A/μs,
VDD = 60 V, TJ = 150 °C
(see Figure 17)
-
252
ns
-
2.8
μC
-
22
A
-
300
ns
-
3.3
μC
-
22.2
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID024666 Rev 1
5/15
15
Electrical characteristics
2.1
STB14NM50N
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM07199v1
is
ID
(A)
on
)
10µs
S(
Op
Lim era
ite tion
d
by in th
m is
ax ar
RD ea
10
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1
10
1
VDS(V)
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM07202v1
ID
(A)
VGS=10V
AM07203v1
ID
(A)
25
25
VDS=18V
20
20
6V
15
15
10
10
5V
5
0
0
5
10
15
20
5
Figure 6. Normalized VBR(DSS) vs temperature
AM09028v1
VBR(DSS)
(norm)
2
4
8
6
10 VGS(V)
Figure 7. Static drain-source on-resistance
AM07205v1
RDS(on)
(Ohm)
ID=1mA
1.10
0
0
VDS(V)
0.300
1.08
VGS=10V
0.295
1.06
0.290
1.04
1.02
0.285
1.00
0.280
0.98
0.275
0.96
0.94
0.92
-50 -25
6/15
0.270
0
25
50
75 100
TJ(°C)
0.265
0
DocID024666 Rev 1
2
4
6
8
10
12
ID(A)
STB14NM50N
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Gate charge vs gate-source voltage
AM07206v1
C
(pF)
AM07204v1
VDS
VGS
(V)
12
VDS
1000
Ciss
VDD=400V
(V)
400
ID=12A
350
10
300
8
250
100
200
6
Coss
150
4
10
Crss
1
0.1
1
100
10
AM07208v1
VGS(th)
(norm)
50
0
VDS(V)
Figure 10. Normalized gate threshold voltage vs
temperature
100
2
0
5
10
15
20
25
30
0
Qg(nC)
Figure 11. Normalized on-resistance vs
temperature
AM07209v1
RDS(on)
(norm)
ID=250µA
1.10
2.1
ID=6A
1.7
1.00
VGS=10 V
0.90
1.3
0.80
0.9
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
0
25
50
75 100
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM15616v1
VSD
(V)
1.4
TJ= -50 °C
1.2
TJ= 25 °C
1
0.8
TJ= 150 °C
0.6
0.4
0.2
0
0 1 2 3 4 5 6 7 8 9 10 11 ISD(A)
DocID024666 Rev 1
7/15
15
Test circuits
3
STB14NM50N
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 16. Unclamped inductive load test circuit
L
A
D
G
FAST
DIODE
D.U.T.
S
3.3
μF
B
B
B
VD
L=100μH
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/15
0
DocID024666 Rev 1
10%
AM01473v1
STB14NM50N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID024666 Rev 1
9/15
15
Package mechanical data
STB14NM50N
Figure 19. D²PAK (TO-263) drawing
0079457_T
10/15
DocID024666 Rev 1
STB14NM50N
Package mechanical data
Table 9. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
8°
Figure 20. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
DocID024666 Rev 1
Footprint
11/15
15
Packaging mechanical data
5
STB14NM50N
Packaging mechanical data
Figure 21. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
W
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
a. All dimensions are in millimeters
12/15
DocID024666 Rev 1
STB14NM50N
Packaging mechanical data
Figure 22. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 10. D²PAK (TO-263) and DPAK tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID024666 Rev 1
Min.
Max.
330
13.2
26.4
30.4
13/15
15
Revision history
6
STB14NM50N
Revision history
Table 11. Document revision history
14/15
Date
Revision
27-Jun-2014
1
Changes
First release.
DocID024666 Rev 1
STB14NM50N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2014 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
DocID024666 Rev 1
15/15
15