STB150NF04

STB150NF04 STP150NF04 N-channel 40 V, 0.005 Ω, 80 A, TO-220, D2PAK STripFET™II Power MOSFET Features Type VDSS RDS(on) max ID STB150NF04 40 V < 0.007 Ω 80 A STP150NF04 40 V < 0.007 Ω 80 A 3 ■ 100% avalanche tested ■ Standard level gate drive 1 3 1 D²PAK 2 TO-220 Application ■ Switching applications Description This Power MOSFET is the latest development of STMicroelectronis unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STB150NF04 B150NF04 D²PAK Tape and reel STP150NF04 P150NF04 TO-220 Tube September 2009 Doc ID 14848 Rev 2 1/14 www.st.com 14 Contents STB150NF04, STP150NF04 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 Doc ID 14848 Rev 2 STB150NF04, STP150NF04 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V ± 20 V VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage ID(1) Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC = 100 °C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C Peak diode recovery voltage slope 2 V/ns 0.6 J -55 to 175 °C Value Unit IDM (2) Ptot dv/dt (3) EAS (4) Tstg Tj Single pulse avalanche energy Storage temperature Max. operating junction temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 80A, di/dt ≤ 300 A/µs, VDD= 80%V(BR)DSS 4. Starting Tj = 25 °C, ID= 40 A, VDD=30 V Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb max 35 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz of Cu Doc ID 14848 Rev 2 3/14 Electrical characteristics 2 STB150NF04, STP150NF04 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating @125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A V(BR)DSS Table 5. Symbol Min. Typ. Max. 40 Unit V 1 10 µA µA ±100 nA 4 V 0.005 0.007 Ω Min. Typ. Max. Unit 2 Dynamic Parameter Test conditions gfs(1) Forward transconductance VDS = 15 V, ID = 15 A - 90 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f =1 MHz VGS=0 - 3650 1145 400 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=32 V, ID=80 A, VGS=10 V (see Figure 14) 150 - 118 20 45 nC nC nC Min. Typ. Max. Unit 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 6. Symbol td(on) tr td(off) tf 4/14 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 25 V, ID = 40 A RG = 4.7 Ω, VGS = 10 V (see Figure 13) Doc ID 14848 Rev 2 15 150 70 45 ns ns ns ns STB150NF04, STP150NF04 Table 7. Symbol ISD Electrical characteristics Source drain diode Parameter Test conditions Source-drain current Min. Typ. Max. Unit - 80 A ISDM(1) Source-drain current (pulsed) ISD = 80 A, VGS = 0 - 320 A VSD(2) Forward on voltage ISD = 80 A, VGS = 0 - 1.3 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 80 A, di/dt=100 A/µs VDD = 25 V, Tj = 150 °C (see Figure 15) - trr Qrr IRRM 73 170 4.6 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 14848 Rev 2 5/14 Electrical characteristics STB150NF04, STP150NF04 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics HV42440 ID(A) TJ=150°C TC=25°C Single pulse is ea ) Ar S(on his RD t n ax ni tio by M era ited p O im L 100 100µs 1ms 10 10ms 1 0.1 0.1 10 1 Figure 4. VDS(V) Output characteristics HV42470 ID(A) VGS=10V 225 HV42475 ID(A) 225 VDS=10V 200 200 6V 175 175 150 150 5V 125 125 100 100 75 75 50 4V 25 50 25 0 0 Figure 6. 1 2 3 4 5 6 7 8 9 VDS(V) Normalized BVDSS vs temperature 0 0 Figure 7. 1 2 3 4 5 6 7 8 9 VGS(V) Static drain-source on resistance HV42430 RDS(on) (Ω) VGS=10V 7.0 6.5 6.0 5.5 5.0 4.5 4.0 0 6/14 Doc ID 14848 Rev 2 10 20 30 40 50 60 70 80 ID(A) STB150NF04, STP150NF04 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations HV42420 C(pF) f=1MHz VGS=0 9000 8000 7000 6000 5000 Ciss 4000 3000 2000 Coss 1000 0 Figure 10. Normalized gate threshold voltage vs temperature Crss 0 5 10 15 20 25 30 VDS(V) Figure 11. Normalized on resistance vs temperature HV42410 VGS(th) (norm) VDS=VGS ID=250µA 1.00 0.90 0.80 0.70 0.60 -75 -50 -25 0 25 50 75 100 125 150 175 TJ(°C) Figure 12. Source-drain diode forward characteristics Doc ID 14848 Rev 2 7/14 Test circuits 3 STB150NF04, STP150NF04 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/14 Doc ID 14848 Rev 2 STB150NF04, STP150NF04 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 14848 Rev 2 9/14 Package mechanical data STB150NF04, STP150NF04 D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.409 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0079457_M 10/14 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.4 0° Typ Doc ID 14848 Rev 2 8° STB150NF04, STP150NF04 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Doc ID 14848 Rev 2 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/14 Packaging mechanical data 5 STB150NF04, STP150NF04 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 MAX. B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 12/14 Doc ID 14848 Rev 2 MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB150NF04, STP150NF04 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 01-Jul-2008 1 First release 25-Sep-2009 2 Inserted device in TO-220 Doc ID 14848 Rev 2 13/14 STB150NF04, STP150NF04 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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