STB15N65M5, STD15N65M5
Datasheet
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ M5 Power MOSFETs
in D2PAK and DPAK packages
Features
TAB
TAB
Order code
2 3
2
1
3
STB15N65M5
1
DPAK
D2PAK
D(2, TAB)
G(1)
STD15N65M5
VDS @
TJmax
710 V
•
Extremely low RDS(on)
•
•
•
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
RDS(on) max.
ID
0.34 Ω
11 A
Applications
S(3)
AM01475v1_noZen
•
Switching applications
Description
These devices are N-channel Power MOSFET based on the MDmesh™ M5
innovative vertical process technology combined with the well-known PowerMESH™
horizontal layout. The resulting products offer extremely low on-resistance, making
them particularly suitable for applications requiring high power and superior
efficiency.
Product status
STB15N65M5
STD15N65M5
DS9045 - Rev 2 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STB15N65M5, STD15N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VGS
Parameter
Gate-source voltage
Value
Unit
±25
V
ID
Drain current (continuous) at TC = 25 °C
11
A
ID
Drain current (continuous) at TC = 100 °C
6.9
A
IDM (1)
Drain current (pulsed)
44
A
PTOT
Total dissipation at TC = 25 °C
85
W
Peak diode recovery voltage slope
15
V/ns
-55 to 150
°C
dv/dt (2)
Tj
Operating junction temperature range
Tstg
Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb
(1)
Thermal resistance junction-pcb
Value
D2PAK
DPAK
1.47
30
Unit
°C/W
50
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
IAR
EAS
DS9045 - Rev 2
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
Unit
2.5
A
160
mJ
page 2/24
STB15N65M5, STD15N65M5
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
ID = 1 mA, VGS = 0 V
Min.
Typ.
650
1
µA
100
µA
±100
nA
4
5
V
0.308
0.34
Ω
Typ.
Max.
Unit
-
pF
VGS = 0 V, VDS = 650 V,
Zero gate voltage drain current
TC = 125 °C (1)
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on resistance
VGS = 10 V, ID = 5.5 A
3
Unit
V
VGS = 0 V, VDS = 650 V
IDSS
Max.
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Co(tr) (1)
Co(er) (2)
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Equivalent capacitance time related
Equivalent capacitance
Min.
816
-
2.6
-
VDS = 0 to 520 V, VGS = 0 V
energy related
Rg
Gate input resistance
f = 1 MHz, ID=0 A
Qg
Total gate charge
VDD = 520 V, ID = 5.5 A,
Qgs
Gate-source charge
Qgd
Gate-drain charge
VGS = 0 to 10 V
(see Figure 17. Test circuit for
gate charge behavior)
23
-
-
70
-
21
-
5
-
22
-
5.5
11
-
pF
Ω
nC
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 6. Switching times
Symbol
Test conditions
td(v)
Voltage delay time
VDD = 400 V, ID = 7 A,
tr(v)
Voltage rise time
RG = 4.7 Ω, VGS = 10 V
Crossing time
(see Figure 18. Test circuit for
inductive load switching and
diode recovery times and Figure
21. Switching time waveform)
tc(off)
tf(i)
DS9045 - Rev 2
Parameter
Current fall time
Min.
Typ.
Max.
Unit
-
ns
30
8
-
12.5
11
page 3/24
STB15N65M5, STD15N65M5
Electrical characteristics
Table 7. Source drain diode
Symbol
ISD
Parameter
Test conditions
Source-drain current
Typ.
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 11 A, VGS = 0 V
trr
Reverse recovery time
ISD = 11 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
VDD = 100 V
Reverse recovery current
(see Figure 18. Test circuit for
inductive load switching and
diode recovery times)
trr
Reverse recovery time
ISD = 11 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
VDD = 100 V, Tj = 150 °C
IRRM
Reverse recovery current
(see Figure 18. Test circuit for
inductive load switching and
diode recovery times)
44
-
-
-
Max.
11
-
ISDM (1)
IRRM
Min.
1.5
Unit
A
V
247
ns
2.4
μC
19.5
A
312
ns
3
μC
19
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS9045 - Rev 2
page 4/24
STB15N65M5, STD15N65M5
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1. Safe operating area for D2PAK
Figure 2. Thermal impedance for D2PAK
AM15285v1
ID
(A)
101
s
ai
re on)
s a DS(
R
in ax
n
m
tio y
ra ed b
e
p
O imit
L
10µs
100µs
i
th
100
1ms
10ms
Tj=150°C
Tc=25°C
10-1
Single
pulse
10-2
101
100
10-1
102
VDS(V)
Figure 3. Safe operating area for DPAK
AM15284v1
ID
(A)
101
s
hi
ar
ea
GC20460
K
10µs
is
n)
(o
S
t
in x R D
n
a
tio m
ra d by
e
p ite
O
100
Figure 4. Thermal impedance for DPAK
100µs
m
Li
100
1ms
10ms
Tj=150°C
Tc=25°C
10-1
10-1
Single
pulse
10-2
101
100
10-1
102
10-2
10-5
VDS(V)
Figure 5. Output characterisics
VGS= 9, 10 V
20
10-3
10-2
10-1
tp (s)
Figure 6. Transfer characteristics
AM15287v1
ID
(A)
10-4
AM152887v1
ID
(A)
VDS= 25 V
20
VGS= 8 V
15
15
VGS= 7 V
10
10
5
VGS= 6 V
0
DS9045 - Rev 2
0
5
10
15
20
25 VDS(V)
5
0
3
4
5
6
7
8
9 VGS(V)
page 5/24
STB15N65M5, STD15N65M5
Electrical characteristics curves
Figure 7. Gate charge vs gate-source voltage
AM15289v1
VGS
(V)
VDS
(V)
500
VDD=520V
12
ID=5.5A
VDS
10
Figure 8. Static drain-source on resistance
AM15293v1
RDS(on)
(W)
VGS=10V
0.35
400
0.33
300
0.31
200
0.29
100
0.27
8
6
4
2
0
0
10
5
15
0
25 Qg (nC)
20
Figure 9. Output capacitance stored energy
AM15290v1
C
(pF)
0.25
0
4
2
6
8
10 ID(A)
Figure 10. Capacitance variations
AM15291v1
Eoss
(µJ)
4
3.5
1000
Ciss
3
2.5
100
2
Coss
10
Crss
1.5
1
0.5
1
0.1
1
10
100
VDS(V)
Figure 11. Normalized gate threshold voltage vs
temperature
AM05459v2
VGS(th)
(norm)
1.10
ID = 250 µA
VDS = VGS
0
0
100
200
300
400
500
600
VDS(V)
Figure 12. Normalized on-resistance vs temperature
RDS(on)
(norm)
2.1
AM05460v2
VGS= 10 V
ID= 5.5 A
1.9
1.7
1.00
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
DS9045 - Rev 2
0
25
50
75 100
TJ(°C)
0.5
-50 -25
0
25
50
75 100
TJ(°C)
page 6/24
STB15N65M5, STD15N65M5
Electrical characteristics curves
Figure 14. Normalized V(BR)DSS vs temperature
Figure 13. Source-drain diode forward characteristics
AM05461v1
VSD
(V)
AM10399v1
VDS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0
0.94
0
10
20
30
40
0.92
-50 -25
50 ISD(A)
0
25
50
75 100
TJ(°C)
Figure 15. Switching losses vs gate resistance
AM15292v1
E (μJ)
120
Eon
VDD=400V
VGS=10V
ID=7A
100
80
60
Eoff
40
20
0
DS9045 - Rev 2
0
10
20
30
40
50 RG(W)
page 7/24
STB15N65M5, STD15N65M5
Test circuits
3
Test circuits
Figure 16. Test circuit for resistive load switching times
Figure 17. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 18. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
B
L
A
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 19. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 20. Unclamped inductive waveform
V(BR)DSS
Figure 21. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
VD
90%Vds
90%Id
Tdelay -off
IDM
Vgs
90%Vgs
on
ID
Vgs(I(t ))
VDD
VDD
10%Vds
10%Id
Vds
Trise
AM01472v1
DS9045 - Rev 2
Tfall
Tcross --over
AM05540v2_for_M5
page 8/24
STB15N65M5, STD15N65M5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS9045 - Rev 2
page 9/24
STB15N65M5, STD15N65M5
D²PAK (TO-263) type A package information
4.1
D²PAK (TO-263) type A package information
Figure 22. D²PAK (TO-263) type A package outline
0079457_25
DS9045 - Rev 2
page 10/24
STB15N65M5, STD15N65M5
D²PAK (TO-263) type A package information
Table 8. D²PAK (TO-263) type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.30
8.50
8.70
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
DS9045 - Rev 2
Typ.
0.40
0°
8°
page 11/24
STB15N65M5, STD15N65M5
D²PAK (TO-263) type A package information
Figure 23. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS9045 - Rev 2
page 12/24
STB15N65M5, STD15N65M5
DPAK (TO-252) type A2 package information
4.2
DPAK (TO-252) type A2 package information
Figure 24. DPAK (TO-252) type A2 package outline
0068772_type-A2_rev25
DS9045 - Rev 2
page 13/24
STB15N65M5, STD15N65M5
DPAK (TO-252) type A2 package information
Table 9. DPAK (TO-252) type A2 mechanical data
Dim.
mm
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
5.10
5.20
5.30
e
2.159
2.286
2.413
e1
4.445
4.572
4.699
H
9.35
10.10
L
1.00
1.50
L1
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
R
V2
DS9045 - Rev 2
Typ.
5.10
5.25
6.60
1.00
0.20
0°
8°
page 14/24
STB15N65M5, STD15N65M5
DPAK (TO-252) type C2 package information
4.3
DPAK (TO-252) type C2 package information
Figure 25. DPAK (TO-252) type C2 package outline
0068772_C2_25
DS9045 - Rev 2
page 15/24
STB15N65M5, STD15N65M5
DPAK (TO-252) type C2 package information
Table 10. DPAK (TO-252) type C2 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.30
2.38
A1
0.90
1.01
1.10
A2
0.00
0.10
b
0.72
0.85
b4
5.13
c
0.47
0.60
c2
0.47
0.60
D
6.00
D1
5.10
E
6.50
E1
5.20
e
2.186
2.286
2.386
H
9.80
10.10
10.40
L
1.40
1.50
1.70
L1
L2
6.20
5.60
6.60
6.70
5.50
0.90
1.25
0.51 BSC
0.60
L6
DS9045 - Rev 2
6.10
5.46
2.90 REF
L3
L4
5.33
0.80
1.00
1.80 BSC
θ1
5°
7°
9°
θ2
5°
7°
9°
V2
0°
8°
page 16/24
STB15N65M5, STD15N65M5
DPAK (TO-252) type C2 package information
Figure 26. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25
DS9045 - Rev 2
page 17/24
STB15N65M5, STD15N65M5
D²PAK and DPAK packing information
4.4
D²PAK and DPAK packing information
Figure 27. Tape outline
DS9045 - Rev 2
page 18/24
STB15N65M5, STD15N65M5
D²PAK and DPAK packing information
Figure 28. Reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 11. D²PAK tape and reel mechanical data
Tape
Dim.
DS9045 - Rev 2
Reel
mm
mm
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
Max.
330
13.2
26.4
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
page 19/24
STB15N65M5, STD15N65M5
D²PAK and DPAK packing information
Table 12. DPAK tape and reel mechanical data
Tape
Dim.
mm
mm
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
DS9045 - Rev 2
Reel
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
18.4
22.4
page 20/24
STB15N65M5, STD15N65M5
Ordering information
5
Ordering information
Table 13. Order codes
Order code
STB15N65M5
STD15N65M5
DS9045 - Rev 2
Marking
15N65M5
Package
D2PAK
DPAK
Packing
Tape and reel
page 21/24
STB15N65M5, STD15N65M5
Revision history
Table 14. Document revision history
Date
Version
09-Nov-2012
1
Changes
First release.
Removed maturity status indication from cover page. The document status is
production data.
15-May-2018
2
Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and
Section 2.1 Electrical characteristics curves.
Minor text changes.
DS9045 - Rev 2
page 22/24
STB15N65M5, STD15N65M5
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
4.1
D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3
DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.4
D²PAK and DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
DS9045 - Rev 2
page 23/24
STB15N65M5, STD15N65M5
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS9045 - Rev 2
page 24/24