STB16N65M5

STB16N65M5 STD16N65M5 N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET in D²PAK, DPAK Features Type VDSS @ TJmax RDS(on) max. ID 710 V < 0.279 Ω 12 A STB16N65M5 STD16N65M5 ■ TAB 3 3 DPAK worldwide best RDS(on) 1 1 DPAK D²PAK ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Application ■ TAB Figure 1. Internal schematic diagram Switching applications $4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. ' 3 !-V Device summary Order codes Marking Package STB16N65M5 D²PAK 16N65M5 STD16N65M5 October 2011 Packaging Tape and reel DPAK Doc ID 18146 Rev 2 1/19 www.st.com 19 Contents STB16N65M5, STD16N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 Doc ID 18146 Rev 2 STB16N65M5, STD16N65M5 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage 650 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 12 A ID Drain current (continuous) at TC = 100 °C 7.3 A Drain current (pulsed) 48 A Total dissipation at TC = 25 °C 90 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 4 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 200 mJ Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C IDM (1) PTOT dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK Rthj-case Thermal resistance junction-case max Rthj-pcb(1) Thermal resistance junction-pcb max D²PAK 1.38 50 °C/W 30 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID 18146 Rev 2 3/19 Electrical characteristics 2 STB16N65M5, STD16N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. Max. Unit 650 V IDSS VDS = 650 V Zero gate voltage drain current (VGS = 0) VDS = 650 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.230 0.279 Ω Min. Typ. Max. Unit - 1250 30 3 - pF pF pF - 100 - pF - 30 - pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 5. Symbol Ciss Coss Crss 3 VGS = 10 V, ID = 6 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance f = 1 MHz open drain - 2 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 6 A, VGS = 10 V (see Figure 18) - 31 8 12 - nC nC nC 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/19 Doc ID 18146 Rev 2 STB16N65M5, STD16N65M5 Table 6. Symbol td (v) tr (v) tf (i) tc(off) Table 7. Electrical characteristics Switching times Parameter Test conditions VDD = 400 V, ID = 8 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) (see Figure 22) Voltage delay time Voltage rise time Current fall time Crossing time Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 25 7 6 8 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 12 48 A A ISD = 12 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V (see Figure 22) - 300 3.5 23 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 22) - 350 4 24 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 18146 Rev 2 5/19 Electrical characteristics STB16N65M5, STD16N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK Figure 3. Thermal impedance for D²PAK Figure 5. Thermal impedance for DPAK Figure 7. Transfer characteristics AM08610v1 is ID (A) D S( on ) O Li per m at ite io d ni by n m this ax a R rea 10 1 10µs 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for DPAK AM08609v1 ) 10µs D S( 10 on O Li per m at ite io d ni by n m this ax a R rea is ID (A) 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 6. ID (A) 10 1 100 VDS(V) Output characteristics AM03178v1 VGS=10V AM03179v1 ID (A) VDS=10V 7.5V 20 20 7V 15 15 6.5V 10 10 6V 5 5 5.5V 0 0 6/19 2 4 6 8 10 12 14 16 18 0 VDS(V) Doc ID 18146 Rev 2 3 4 5 6 7 8 9 VGS(V) STB16N65M5, STD16N65M5 Figure 8. Electrical characteristics Normalized BVDSS vs. temperature AM03187v1 BVDSS (norm) ID=1mA Figure 9. Static drain-source on resistance 1.07 0.245 1.05 0.240 1.03 0.235 1.01 0.230 0.99 0.225 0.97 0.220 0.95 0.215 0.93 -50 -25 0 25 75 100 50 TJ(°C) Figure 10. Output capacitance stored energy AM03312v1 Eoss (µJ) 7 AM03181v1 RDS(on) (Ω) 0.210 0 VGS=10V 4 2 8 6 10 12 ID(A) Figure 11. Capacitance variations AM03183v1 C (pF) 10000 6 5 Ciss 1000 4 100 3 Coss 2 10 Crss 1 0 0 100 200 300 400 500 600 Figure 12. Gate charge vs. gate-source voltage VDS 10 100 VDS(V) AM03185v1 RDS(on) (norm) VDD=520V VGS=10V ID=6A 12 1 Figure 13. Normalized on resistance vs. temperature AM03182v1 VGS (V) 1 0.1 VDS(V) VGS VGS=10V ID=6.5V 2.1 500 1.9 10 400 8 1.7 1.5 300 6 200 4 1.3 1.1 0.9 100 2 0 0 5 10 15 20 25 30 35 Qg(nC) 0.7 0.5 -50 Doc ID 18146 Rev 2 0 50 100 TJ(°C) 7/19 Electrical characteristics STB16N65M5, STD16N65M5 Figure 14. Normalized gate threshold voltage vs. temperature AM03184v1 VGS(th) (norm) ID=250µA 1.10 Figure 15. Source-drain diode forward characteristics AM03186v1 VSD (V) 1.0 TJ=-25°C 0.9 1.00 0.8 0.90 TJ=25°C 0.7 TJ=150°C 0.6 0.80 0.5 0.70 -50 0.4 0 50 TJ(°C) 100 Figure 16. Switching losses vs. gate resistance(1) AM10359v1 E (µJ) 100 Eon 80 60 Eoff 40 20 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode. 8/19 Doc ID 18146 Rev 2 0 5 10 ISD(A) STB16N65M5, STD16N65M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 22. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 Doc ID 18146 Rev 2 Tfall Tcross --over AM05540v1 9/19 Package mechanical data 4 STB16N65M5, STD16N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/19 Doc ID 18146 Rev 2 STB16N65M5, STD16N65M5 Table 8. Package mechanical data D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° Doc ID 18146 Rev 2 11/19 Package mechanical data STB16N65M5, STD16N65M5 Figure 23. D²PAK (TO-263) drawing 0079457_S Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimensions are in millimeters 12/19 Doc ID 18146 Rev 2 Footprint STB16N65M5, STD16N65M5 Table 9. Package mechanical data DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R V2 0.20 0° 8° Doc ID 18146 Rev 2 13/19 Package mechanical data STB16N65M5, STD16N65M5 Figure 25. DPAK (TO-252) drawing 0068772_H Figure 26. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 b. All dimensions are in millimeters 14/19 Doc ID 18146 Rev 2 AM08850v1 STB16N65M5, STD16N65M5 5 Packaging mechanical data Packaging mechanical data Table 10. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Table 11. Min. Max. 330 13.2 26.4 30.4 DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 Doc ID 18146 Rev 2 18.4 22.4 15/19 Packaging mechanical data Table 11. STB16N65M5, STD16N65M5 DPAK (TO-252) tape and reel mechanical data (continued) Tape Reel mm mm Dim. Dim. Min. Max. P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Min. Max. Figure 27. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 16/19 Doc ID 18146 Rev 2 STB16N65M5, STD16N65M5 Packaging mechanical data Figure 28. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 18146 Rev 2 17/19 Revision history 6 STB16N65M5, STD16N65M5 Revision history Table 12. Document revision history Date Revision 09-Nov-2010 1 First release. 2 Modified Section 2.1: Electrical characteristics (curves): – Figure 6, Figure 7, Figure 8, Figure 9, Figure 13 and Figure 14 – Added Figure 15 Updated RDS(on) value in coverpage and in Table 4 Updated values in Table 6 Updated Section 4: Package mechanical data and Section 5: Packaging mechanical data. Minor text changes. 14-Oct-2011 18/19 Changes Doc ID 18146 Rev 2 STB16N65M5, STD16N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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