STB16PF06LT4

STB16PF06L P-CHANNEL 60V - 0.11Ω - 16A D2PAK STripFET™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STB16PF06L 60 V < 0.125 Ω 16 A 70 W ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s) r P ( t e uc t e l od o s Pr b O te e l o s b ■ ■ ■ TYPICAL RDS(on) = 0.11 Ω LOW THRESHOLD DEVICE LOW GATE CHARGE DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK TO-263 Figure 2: Internal Schematic Diagram APPLICATIONS ■ MOTOR CONTROL ■ DC-DC CONVERTERS Table 2: Order Codes O PART NUMBER MARKING PACKAGE PACKAGING STB16PF06LT4 B16PF06L D2PAK TAPE & REEL Rev. 1 September 2004 1/10 STB16PF06L Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V ± 16 V ID Gate-source Voltage Drain Current (continuous) at TC = 25°C 16 A ID Drain Current (continuous) at TC = 100°C 11.4 A 64 A IDM (
) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C 70 W Derating Factor 0.4 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns EAS (2) Single Pulse Avalanche Energy 250 mJ Tj Tstg Operating Junction Temperature Storage Temperature - 55 to 175 °C ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s) r P ( t e uc t e l od o s Pr b O te e l o s b (
) Pulse width limited by safe operating area (1) ISD ≤16A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj = 25°C , ID = 8 A , VDD = 30 V Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 2.14 °C/W Rthj-PCB(#) Thermal Resistance Junction-PCB Max 34 °C/W Maximum Lead Temperature For Soldering Purpose (1.6 mm frrom case, for 10sec) 300 °C Tl (#) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol 2/10 Test Conditions Drain-source Breakdown Voltage ID = 250µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 8 A VGS = 5V, ID = 8 A V(BR)DSS O Parameter Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA 0.125 0.165 Ω Ω 1.5 V 0.11 0.130 STB16PF06L ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs Parameter Forward Transconductance Test Conditions Min. VDS = 10 V, ID = 3 A Typ. Max. Unit 7.2 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 630 121 49 pF pF pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 30 V, ID = 8 A, RG = 4.7Ω VGS = 4.5 V (Resistive Load , Figure 1) 129 90 25.5 19.5 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 48 V, ID = 16 A, VGS = 4.5V (See test circuit, Figure 2) 11.4 5.2 4.7 15.5 nC nC nC Typ. Max. Unit 16 64 A A ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s) r P ( t e uc t e l od o s Pr b O te e l o s b Table 7: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 8 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16 A, di/dt = 100A/µs VDD = 20V, Tj = 150°C (see test circuit, Figure 3) trr Qrr IRRM Test Conditions Min. 1.3 48.5 87.3 3.6 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. O 3/10 STB16PF06L Figure 3: Safe Operating Area Figure 6: Thermal Impedance ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s) r P ( t e uc t e l od o s Pr b O te e l o s b Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance O 4/10 STB16PF06L Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s) r P ( t e uc t e l od o s Pr b O te e l o s b Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Dource-Drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature O 5/10 STB16PF06L Figure 15: Unclamped Inductive Load Test Circuit Figure 18: Unclamped Inductive Wafeform ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s) r P ( t e uc t e l od o s Pr b O te e l o s b Figure 16: Switching Times Test Circuit For Resistive Load Figure 17: Test Circuit For Inductive Load Switching and Diode Recovery Times O 6/10 Figure 19: Gate Charge Test Circuit STB16PF06L D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s) r P ( t e uc t e l od o s Pr b O te e l o s b D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R V2 0.4 0º 0.015 4º 3 O 1 7/10 STB16PF06L D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s) r P ( t e uc t e l od o s Pr b O te e l o s b TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. O mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MAX. 0.449 0.456 F 11.4 11.6 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 8/10 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB16PF06L Table 8: Revision History Date Revision 13/Sep/2004 1 Description of Changes First Release. ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s) r P ( t e uc t e l od o s Pr b O te e l o s b O 9/10 STB16PF06L ) s ( t c u d o s) r ( P t c e u t e l od o s Pr b O ete l ) o s ( s t b c u -O d o s) r P ( t e uc t e l od o s Pr b O te e l o s b Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics O All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10