STB170NF04

STB170NF04 N-channel 40 V, 4.4 mΩ typ., 80 A STripFET™ II Power MOSFET in a D2PAK package Datasheet — production data Features Order code VDSS @TJ max. RDS(on) max. ID PTOT STB170NF04 40 V < 5 mΩ 80 A 300 W ■ TAB Standard threshold drive 3 Applications ■ 1 D2PAK Automotive switching applications Description This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Table 1. Figure 1. Internal schematic diagram , TAB Device summary Order code Marking Package Packaging STB170NF04 B170NF04 D2PAK Tape and reel October 2012 This is information on a product in full production. Doc ID 15591 Rev 2 1/15 www.st.com 15 Contents STB170NF04 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 8 Doc ID 15591 Rev 2 STB170NF04 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V ± 20 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC = 100 °C 80 A IDM (2) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C dv/dt (3) Peak diode recovery voltage slope 8 V/ns EAS (4) Single pulse avalanche energy 1.5 J Tj Operating junction temperature Storage temperature -55 to 175 °C Value Unit 0.5 °C/W 35 °C/W Tstg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX 4. Starting Tj = 25 °C, ID = 40 A, VDD = 30 V Table 3. Thermal data Symbol Rthj-case Parameter Thermal resistance junction-case max Rthj-pcb(1) Thermal resistance junction-pcb max 1. When mounted on 1 inch² FR4 2 oz Cu Doc ID 15591 Rev 2 3/15 Electrical characteristics 2 STB170NF04 Electrical characteristics (TCASE=25°C unless otherwise specified). Table 4. Symbol V(BR)DSS Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 Min. Typ. Max. 40 Unit V VDS = 40 V, VDS = 40 V, Tc=125 °C 10 100 µA µA Gate body leakage current (VDS = 0) VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 V RDS(on) Static drain-source onresistance VGS= 10 V, ID= 40 A 4.4 5 mΩ Min. Typ. Max. Unit Zero gate voltage drain current (VGS = 0) IGSS Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd 2 Dynamic Parameter Test conditions Forward transconductance VDS =15 V, ID = 40 A - 90 Input capacitance Output capacitance Reverse transfer capacitance - 5345 1400 430 9000 VDS =25 V, f=1 MHz, VGS=0 pF pF pF 170 - 117 27 41 nC nC nC Min. Typ. Max. Unit - 26 57 - ns ns - 100 66 - ns ns Total gate charge Gate-source charge Gate-drain charge VDD=20 V, ID = 80 A VGS =10 V (see Figure 14) S Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 6. Switching times Symbol Parameter td(on) tr td(off) tf 4/15 Parameter IDSS Table 5. 1. On/off Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V (see Figure 13) VDD= 20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V (see Figure 13) Doc ID 15591 Rev 2 STB170NF04 Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Min. Max. Unit - 80 320 A A 1.5 V Forward on voltage ISD= 80 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 80 A, di/dt = 100 A/µs, VDD=20 V, Tj=150 °C - (see Figure 18) Typ. 70 180 4 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 15591 Rev 2 5/15 Electrical characteristics STB170NF04 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM15419v1 ID (A) is ea ar (on) s i DS th in ax R ion y m t a er d b Op ite Lim 100 100µs 1ms 10ms 10 Tj=175°C Tc=25°C 1 Single pulse 0.10 0.1 10 1 Figure 4. VDS(V) Output characteristics HV41290 ID(A) VGS=10 V HV41295 ID(A) 8V 350 300 300 VDS=15 V 250 250 7V 200 200 150 150 6V 100 50 50 5V 0 -2 Figure 6. 6/15 100 0 2 4 6 8 10 VDS(V) Normalized BVDSS vs temperature 0 0 Figure 7. Doc ID 15591 Rev 2 2 4 6 8 VGS(V) Static drain-source on-resistance STB170NF04 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. HV41310 VGS (V) HV41300 C(pF) 9000 VDD=20V ID=80A 12 Capacitance variations TJ=25 °C f=1 MHz 8000 10 7000 6000 8 5000 6 4000 3000 4 2000 2 1000 0 25 50 75 100 0 Qg (nC) Figure 10. Normalized gate threshold voltage vs temperature 0 5 10 15 20 25 30 35 VDS(pF) Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 15591 Rev 2 7/15 Test circuits 3 STB170NF04 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/15 Figure 18. Switching time waveform Doc ID 15591 Rev 2 STB170NF04 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 15591 Rev 2 9/15 Package mechanical data Table 8. STB170NF04 D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/15 Max. 0.4 0° 8° Doc ID 15591 Rev 2 STB170NF04 Package mechanical data Figure 19. D²PAK (TO-263) drawing 0079457_T Figure 20. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 15591 Rev 2 11/15 Packaging mechanical data 5 STB170NF04 Packaging mechanical data Table 9. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 12/15 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 15591 Rev 2 Min. Max. 330 13.2 26.4 30.4 STB170NF04 Packaging mechanical data Figure 21. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 22. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 15591 Rev 2 13/15 Revision history 6 STB170NF04 Revision history Table 10. 14/15 Document revision history Date Revision Changes 16-Apr-2009 1 Initial release 31-Oct-2012 2 Modified: Figure 2, 3 and Section 4: Package mechanical data and Section 5: Packaging mechanical data Doc ID 15591 Rev 2 STB170NF04 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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