STB18N55M5

STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 N-channel 550 V, 0.150 Ω typ., 16 A, MDmesh™ V Power MOSFETs in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 600 V 0.192 Ω 16 A 3 STB18N55M5 1 3 1 DPAK D²PAK STD18N55M5 STF18N55M5 TAB STP18N55M5 • Higher VDSS rating 3 3 1 2 1 TO-220FP 2 • High dv/dt capability • Excellent switching performance TO-220 • Easy to drive Figure 1. Internal schematic diagram • 100% avalanche tested Applications '7$% • Switching applications Description * 6 !-V These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package STB18N55M5 D²PAK STD18N55M5 DPAK Packaging Tape and reel 18N55M5 STF18N55M5 TO-220FP STP18N55M5 TO-220 Tube November 2013 This is information on a product in full production. DocID17078 Rev 3 1/24 www.st.com Contents STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2/24 .............................................. 9 DocID17078 Rev 3 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID ID Parameter TO-220, DPAK, D²PAK Gate-source voltage Unit TO-220FP ± 25 Drain current (continuous) at TC = 25 °C V 16 16 (1) A (1) A Drain current (continuous) at TC = 100 °C 10 10 IDM (2) Drain current (pulsed) 64 64 (1) A PTOT Total dissipation at TC = 25 °C 110 25 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 4 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50 V) 210 mJ Peak diode recovery voltage slope 15 V/ns dv/dt (3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 Max. operating junction temperature V - 55 to 150 °C 150 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 16 A, di/dt ≤ 400 A/µs, VPeak < V (BR)DSS, VDD = 340 V. Table 3. Thermal data Value Symbol Parameter Unit D²PAK DPAK TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 1.14 Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max DocID17078 Rev 3 5 62.5 30 50 °C/W °C/W °C/W 3/24 24 Electrical characteristics 2 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS VDS = 550 V Zero gate voltage drain current (VGS = 0) VDS = 550 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Max. Unit 550 V 1 µA 100 µA ± 100 nA 4 5 V 0.150 0.192 Ω Min. Typ. Max. Unit - 1260 - pF - 42 - pF - 3.6 - pF - 103 - pF - 35 - pF f = 1 MHz open drain - 2.8 - Ω VDD = 440 V, ID = 8 A, VGS = 10 V (see Figure 20) - 31 - nC - 8.3 - nC - 14.2 - nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 8 A resistance 3 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er) (2) Equivalent capacitance energy related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 440 V 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/24 DocID17078 Rev 3 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Electrical characteristics Table 6. Switching times Symbol td(v) Parameter Voltage delay time tr(v) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 10.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19, Figure 24) Crossing time Min. Typ. Max Unit - 37 - ns - 7 - ns - 8.3 - ns - 10.3 - ns Min. Typ. Table 7. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 16 A ISDM (1) Source-drain current (pulsed) - 64 A VSD (2) Forward on voltage - 1.5 V ISD trr ISD = 16 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 16 A, di/dt = 100 A/µs VDD = 100 V (see Figure 21) ISD = 16 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 21) - 244 ns - 2.8 µC - 23 A - 295 ns - 3.7 µC - 25 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID17078 Rev 3 5/24 24 Electrical characteristics 2.1 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK and TO-220 Figure 3. Thermal impedance for D²PAK and TO-220 AM16073v1 n) DS (o Op Lim erat ite ion d b in y m this ax are a R is ID (A) 10 10µs 100µs 1ms 1 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for DPAK Figure 5. Thermal impedance for DPAK AM16074v1 ID (A) n) DS 10 (o Op Lim erat ite ion d b in y m this ax are a R is 10µs 100µs 1ms 1 Tj=150°C Tc=25°C Single pulse 10ms 0.1 0.1 10 1 100 VDS(V) Figure 6. Safe operating area TO220FP Figure 7. Thermal impedance for TO-220FP AM16075v1 ID (A) 10 ) Op Lim era ite tion d by in t m his ax ar RD ea S( is on 10µs 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 6/24 1 10 100 VDS(V) DocID17078 Rev 3 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Figure 8. Output characteristics Electrical characteristics Figure 9. Transfer characteristics AM16076v1 ID (A) AM16077v1 ID (A) VGS=9, 10V 8V VDS=25V 35 30 30 25 7V 20 20 15 10 10 5 6V 0 0 5 0 10 20 15 VDS(V) 25 Figure 10. Gate charge vs gate-source voltage AM16078v1 VDS VGS (V) VDS (V) VDD=440V ID=8A 12 3 4 5 7 6 8 9 VGS(V) Figure 11. Static drain-source on-resistance AM16079v1 RDS(on) (Ω) VGS=10V 0.18 400 10 350 300 8 0.17 0.16 250 6 200 4 150 100 2 0.15 0.14 0.13 50 0 0 5 10 15 20 25 30 0 35 Qg(nC) Figure 12. Capacitance variations 0 2 4 6 8 10 12 14 ID(A) Figure 13. Output capacitance stored energy AM16080v1 C (pF) 0.12 AM16081v1 Eoss (µJ) 5 10000 Ciss 1000 4 3 100 2 Coss 10 1 Crss 1 0.1 1 10 100 VDS(V) DocID17078 Rev 3 0 0 100 200 300 400 500 VDS(V) 7/24 24 Electrical characteristics STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Figure 14. Normalized gate threshold voltage vs. temperature AM05459v1 VGS(th) (norm) 1.10 VDS = VGS ID = 250 µA Figure 15. Normalized on-resistance vs. temperature AM05460v1 RDS(on) (norm) 2.1 VGS = 10 V ID = 8 A 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 Figure 16. Drain-source diode forward characteristics AM05461v1 VSD (V) 0.5 -50 -25 TJ(°C) 75 100 0 25 50 75 100 TJ(°C) Figure 17. Normalized VDS vs. temperature AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 Figure 18. Switching losses vs. gate resistance (1) E (µJ) 250 AM16082v1 ID=10.5A VDD=440V VGS=10V Eon 200 150 100 Eoff 50 0 0 5 10 15 20 25 30 35 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/24 DocID17078 Rev 3 0 25 50 75 100 TJ(°C) STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 21. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 22. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform V(BR)DSS Figure 24. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 DocID17078 Rev 3 Tfall Tcross --over AM05540v1 9/24 24 Package mechanical data 4 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/24 DocID17078 Rev 3 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Package mechanical data Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° DocID17078 Rev 3 11/24 24 Package mechanical data STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Figure 25. D²PAK (TO-263) drawing 0079457_T Figure 26. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimension are in millimeters 12/24 DocID17078 Rev 3 Footprint STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Package mechanical data Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 1.00 R V2 0.20 0° 8° DocID17078 Rev 3 13/24 24 Package mechanical data STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Figure 27. DPAK (TO-252) type A drawing 0068772_M_type_A 14/24 DocID17078 Rev 3 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Package mechanical data Figure 28. DPAK (TO-252) type A footprint (b) Footprint_REV_M_type_A b. All dimensions are in millimeters DocID17078 Rev 3 15/24 24 Package mechanical data STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Table 10. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16/24 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID17078 Rev 3 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Package mechanical data Figure 29. TO-220FP drawing 7012510_Rev_K_B DocID17078 Rev 3 17/24 24 Package mechanical data STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 18/24 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID17078 Rev 3 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Package mechanical data Figure 30. TO-220 type A drawing ?TYPE!?2EV?4 DocID17078 Rev 3 19/24 24 Packaging mechanical data 5 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 20/24 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty. 1000 P2 1.9 2.1 Bulk qty. 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID17078 Rev 3 Min. Max. 330 13.2 26.4 30.4 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Packaging mechanical data Table 13. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID17078 Rev 3 18.4 22.4 21/24 24 Packaging mechanical data STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Figure 31. Tape for D²PAK and DPAK 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 P2 D T E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 D1 P1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 32. Reel for D²PAK and DPAK T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Tape slot In core for Full radius Tape start G measured At hub AM08851v1 22/24 DocID17078 Rev 3 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 6 Revision history Revision history Table 14. Document revision history Date Revision 09-Feb-2010 1 First release. 04-Mar-2011 2 – Document status promoted from preliminary data to datasheet; – Added new package, mechanical data: D²PAK. 22-Nov-2013 3 Changes – – – – – – Updated: title on the cover page and RDS(on) values. Modified: EAS value and note 3 in Table 2 Modified: RDS(on) value in Table 4, typical values in Table 5 and 7 Updated: the entire Table 5 Added: Section 2.1: Electrical characteristics (curves) Updated: Section 4: Package mechanical data and Section 5: Packaging mechanical data – Updated: Figure 11 and 18 – Minor text changes. DocID17078 Rev 3 23/24 24 STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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