STB18N60DM2

STB18N60DM2 N-channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data Features TAB • • 3 1 • • • • D2PAK Figure 1: Internal schematic diagram D(2, TAB) Order code VDS RDS(on) max. ID STB18N60DM2 600 V 0.295 Ω 12 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications • Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. G(1) S(3) AM15572v1_tab Table 1: Device summary Order code Marking Package Packing STB18N60DM2 18N60DM2 D²PAK Tape and reel May 2015 DocID027677 Rev 2 This is information on a product in full production. 1/15 www.st.com Contents STB18N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/15 4.1 D²PAK_(TO-263)_type_A_package information ............................... 9 4.2 D²PAK packing information ............................................................. 12 Revision history ............................................................................ 14 DocID027677 Rev 2 STB18N60DM2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS Parameter Gate-source voltage ID (1) IDM PTOT Value Unit ± 25 V Drain current (continuous) at Tcase = 25 °C 12 Drain current (continuous) at Tcase= 100 °C 7.6 Drain current (pulsed) 48 A W Total dissipation at Tcase = 25 °C 90 dv/dt (2) Peak diode recovery voltage slope 40 dv/dt (3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature Tj Maximum junction temperature –55 to 150 150 A V/ns °C Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 12 A, di/dt ≤ 400 A/µS, VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS. (3) VDS ≤ 480 V. Table 3: Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter Value Thermal resistance junction-case 1.39 Thermal resistance junction-pcb 30 Unit °C/W Notes: (1) When mounted on 1 a inch² FR-4, 2 Oz copper board Table 4: Avalanche characteristics Symbol (1) IAR (2) EAR Parameter Value Unit Avalanche current, repetitive or not repetitive 2.5 A Single pulse avalanche energy 380 mJ Notes: (1) (2) Pulse width is limited by Tjmax. starting Tj = 25 °C, ID = IAR, VDD = 50 V. DocID027677 Rev 2 3/15 Electrical characteristics 2 STB18N60DM2 Electrical characteristics (Tcase= 25 °C unless otherwise specified) Table 5: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1.5 µA VGS = 0 V, VDS = 600 V, Tcase = 125 °C 100 µA ±10 µA 4 5 V 0.260 0.295 Ω Min. Typ. Max. Unit - 800 - - 40 - - 1.33 - IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 6 A 3 Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V pF Equivalent output capacitance VDS = 0 to 480 V, f = 1 MHz, VGS = 0 V - 80 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 5.6 - Ω Qg Total gate charge - 20 - Qgs Gate-source charge - 5.2 - Qgd Gate-drain charge - 8.5 - Coss eq. (1) VDD = 480 V, ID = 12 A, VGS = 10 V (see Figure 14: "Gate charge test circuit") nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol td(on) tr td(off) tf 4/15 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. VDD = 300 V, ID = 6 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform") - DocID027677 Rev 2 Typ. 13.5 Max. Unit - - 8 - - 9.5 - - 32.5 - ns STB18N60DM2 Electrical characteristics Table 8: Source-drain diode Symbol ISD Test conditions Min. Typ. Max. Unit Source-drain current - 12 A (1) Source-drain current (pulsed) - 48 A (2) Forward on voltage - 1.6 V ISDM VSD Parameter VGS = 0 V, ISD = 12 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") ISD = 12 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 125 ns - 0.675 nC - 11 A - 190 ns - 1225 nC - 13 A Notes: (1) (2) Pulse width is limited by safe operating area. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID027677 Rev 2 5/15 Electrical characteristics 2.1 6/15 STB18N60DM2 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID027677 Rev 2 STB18N60DM2 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID027677 Rev 2 7/15 Test circuits 3 STB18N60DM2 Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform 8/15 DocID027677 Rev 2 STB18N60DM2 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 4.1 D²PAK_(TO-263)_type_A_package information Figure 19: D²PAK (TO-263) type A package outline 0079457_A_rev22 DocID027677 Rev 2 9/15 Package information STB18N60DM2 Table 9: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/15 Typ. 0.4 0° DocID027677 Rev 2 8° STB18N60DM2 Package information Figure 20: D²PAK (TO-263) recommended footprint (dimensions are in mm) DocID027677 Rev 2 11/15 Package information 4.2 STB18N60DM2 D²PAK packing information Figure 21: Tape oultine 12/15 DocID027677 Rev 2 STB18N60DM2 Package information Figure 22: Reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10: D²PAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 Max. 330 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID027677 Rev 2 26.4 30.4 13/15 Revision history 5 STB18N60DM2 Revision history Table 11: Document revision history Date Revision 01-Apr-2015 1 First release. 2 Text edits and formatting changes throughout document In Section 2.1 Electrical characteristics (curves): - updated Figure 4: Output characteristics - updated Figure 5: Transfer characteristics 20-May-2015 14/15 Changes DocID027677 Rev 2 STB18N60DM2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID027677 Rev 2 15/15