STB18N60M2, STI18N60M2
STP18N60M2, STW18N60M2
Datasheet
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,
I2PAK, TO-220 and TO-247 packages
Features
TAB
TAB
Order codes
1
3
1
2
RDS(on) max.
STI18N60M2
STP18N60M2
2
3
1
TO-247
TO-220
2
3
Package
D²PAK
650 V
0.280 Ω
STW18N60M2
TAB
1
ID
STB18N60M2
3
I2PAK
D2PAK
VDS @ TJmax
•
•
Extremely low gate charge
Excellent output capacitance (COSS) profile
•
•
100% avalanche tested
Zener-protected
13 A
I²PAK
TO-220
TO-247
Application
D ( 2 , TAB )
•
•
Switching applications
LLC converters, resonant converters
G( 1)
Description
S(3)
AM15572V1
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2
technology. Thanks to their strip layout and improved vertical structure, these devices
exhibit low on-resistance and optimized switching characteristics, rendering them
suitable for the most demanding high-efficiency converters.
Product status link
STB18N60M2
STI18N60M2
STP18N60M2
STW18N60M2
DS9714 - Rev 4 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
13
A
ID
Drain current (continuous) at TC = 100 °C
8
A
IDM (1)
Drain current (pulsed)
52
A
PTOT
Total power dissipation at TC = 25 °C
110
W
dv/dt (2)
Peak diode recovery voltage slope
15
V/ns
dv/dt (3)
MOSFET dv/dt ruggedness
50
V/ns
Tstg
Storage temperature range
- 55 to 150
°C
VGS
Tj
Operating junction temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 13 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.
3. VDS ≤ 480 V.
Table 2. Thermal data
Value
Symbol
Parameter
D2PAK
I2PAK
TO-220
Rthj-case
Thermal resistance junction-case
1.14
Rthj-amb
Thermal resistance junction-ambient
62.5
Rthj-pcb (1)
Thermal resistance junction-pcb
Unit
TO-247
°C/W
50
°C/W
30
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
DS9714 - Rev 4
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
EAS
Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V)
Value
Unit
3
A
135
mJ
page 2/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 4. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source breakdown
voltage
Zero gate voltage
IDSS
drain current
Gate-body leakage
IGSS
current
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source
on-resistance
Test conditions
ID = 1 mA, VGS = 0 V
Min.
Typ.
Max.
600
Unit
V
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V,
TC = 125 °C (1)
100
µA
VDS = 0 V, VGS = ± 25 V
±10
µA
3
4
V
0.255
0.280
Ω
Min.
Typ.
Max.
Unit
-
791
-
pF
-
40
-
pF
-
1.3
-
pF
-
164.5
-
pF
VDS = VGS, ID = 250 µA
2
VGS = 10 V, ID = 6.5 A
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Coss eq.
Reverse transfer capacitance
(1)
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 V
-
5.6
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 13 A,
-
21.5
-
nC
Qgs
Gate-source charge
-
3.2
-
nC
Qgd
Gate-drain charge
VGS = 0 to 10 V (see
Figure 14. Test circuit for gate
charge behavior)
-
11.3
-
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS9714 - Rev 4
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
VDD = 300 V, ID = 6.5 A,
-
12
-
ns
Rise time
RG = 4.7 Ω, VGS = 10 V
-
9
-
ns
Turn-off delay time
(see Figure 13. Test circuit for
resistive load switching times
and Figure 18. Switching time
waveform)
-
47
-
ns
-
10.6
-
ns
Fall time
page 3/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Electrical characteristics
Table 7. Source drain diode
Symbol
ISD
ISDM (1)
(2)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
13
A
Source-drain current (pulsed)
-
52
A
1.6
V
Forward on voltage
ISD = 13 A, VGS = 0 V
-
trr
Reverse recovery time
ISD = 13 A, di/dt = 100 A/µs
-
305
ns
Qrr
Reverse recovery charge
-
3.3
µC
IRRM
Reverse recovery current
VDD = 60 V (see
Figure 15. Test circuit for
inductive load switching and
diode recovery times)
-
22
A
VSD
trr
Reverse recovery time
ISD = 13 A, di/dt = 100 A/µs
-
417
ns
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C
-
4.6
µC
IRRM
Reverse recovery current
(see Figure 15. Test circuit for
inductive load switching and
diode recovery times)
-
22
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS9714 - Rev 4
page 4/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 2. Thermal impedance
Figure 1. Safe operating area
AM15835v1
ID
(A)
)
10µs
S(
on
Op
Li erati
mi
o
ted n in
by thi
ma s a
x R rea
is
D
10
1
100µs
1ms
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
0.1
10
1
100
VDS(V)
Figure 3. Output characteristics
Figure 4. Transfer characteristics
AM15837v1
ID
(A)
VGS=7, 8, 9, 10V
AM15838v1
ID (A)
VDS=18V
30
30
25
25
6V
20
20
15
15
10
10
5V
5
5
4V
0
0
5
15
10
20
VDS(V)
Figure 5. Gate charge vs gate-source voltage
AM15839v1
VDS
VGS
(V)
VDD=480V
ID=13A
12 VDS
VDS
10
0
0
2
4
10
8
6
VGS(V)
Figure 6. Static drain-source on-resistance
(V)
RDS(on)
(W)
500
0.270
400
0.265
300
0.260
200
0.255
100
0.250
AM15840v1
VGS=10V
8
6
4
2
0
0
DS9714 - Rev 4
5
10
15
20
0
25 Qg(nC)
0.245
0
2
4
6
8
10
12
ID(A)
page 5/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Electrical characteristics curves
Figure 8. Normalized gate threshold voltage vs
temperature
Figure 7. Capacitance variations
AM15841v1
C
(pF)
V GS(th)
(norm.)
1000
Ciss
GIPG070815BQ6KLVTH
I D = 250 µA
1.1
1.0
100
0.9
Coss
0.8
10
0.7
Crss
1
0.1
1
10
100
VDS(V)
Figure 9. Normalized on-resistance vs temperature
R DS(on)
(norm.)
GIPG070815BQ6KLRON
V GS = 10 V
2.4
0.6
-75
-25
25
75
125
T j (°C)
Figure 10. Source-drain diode forward characteristics
AM15842v1
VSD (V)
1.4
1.2
2.0
TJ=-50°C
1
1.6
0.8
1.2
0.6
0.8
0.4
0.4
0.2
0
-75
-25
25
75
125
T j (°C)
Figure 11. Normalized V(BR)DSS vs temperature
V (BR)DSS
(norm.)
GIPG070815BQ6KLBDV
I D = 1 mA
1.12
0
4
6
8
10
12
ISD(A)
AM15843v1
Eoss(µJ)
6
5
1.04
4
1.00
3
0.96
2
1
0.92
DS9714 - Rev 4
2
Figure 12. Output capacitance stored energy
1.08
0.88
-75
0
TJ=25°C
TJ=150°C
-25
25
75
125
T j (°C)
0
0
100 200
300
400
500
600 VDS(V)
page 6/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
Figure 14. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 15. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
B
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 16. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 18. Switching time waveform
Figure 17. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
VD
toff
td(off)
tr
tf
90%
90%
IDM
VDD
10%
0
ID
VDD
AM01472v1
VGS
0
VDS
10%
90%
10%
AM01473v1
DS9714 - Rev 4
page 7/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS9714 - Rev 4
page 8/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
D²PAK (TO-263) package information
4.1
D²PAK (TO-263) package information
Figure 19. D²PAK (TO-263) type A package outline
0079457_25
DS9714 - Rev 4
page 9/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
D²PAK (TO-263) package information
Table 8. D²PAK (TO-263) type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.30
8.50
8.70
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
DS9714 - Rev 4
Typ.
0.40
0°
8°
page 10/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
D²PAK (TO-263) package information
Figure 20. D²PAK (TO-263) type B package outline
0079457_25_B
DS9714 - Rev 4
page 11/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
D²PAK (TO-263) package information
Table 9. D²PAK (TO-263) type B mechanical data
Dim.
mm
Min.
Max.
A
4.36
4.56
A1
0
0.25
b
0.70
0.90
b1
0.51
0.89
b2
1.17
1.37
b3
1.36
1.46
c
0.38
0.694
c1
0.38
0.534
c2
1.19
1.34
D
8.60
9.00
D1
6.90
7.50
E
10.15
10.55
E1
8.10
8.70
e
2.54 BSC
H
15.00
15.60
L
1.90
2.50
L1
1.65
L2
1.78
L3
L4
DS9714 - Rev 4
Typ.
0.25
4.78
5.28
page 12/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
D²PAK (TO-263) package information
Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS9714 - Rev 4
page 13/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
D²PAK packing information
4.2
D²PAK packing information
Figure 22. D²PAK tape outline
DS9714 - Rev 4
page 14/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
D²PAK packing information
Figure 23. D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 10. D²PAK tape and reel mechanical data
Tape
Dim.
DS9714 - Rev 4
Reel
mm
mm
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
Max.
330
13.2
26.4
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
page 15/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
D²PAK type B packing information
4.3
D²PAK type B packing information
Figure 24. D²PAK type B tape outline
Figure 25. D²PAK type B reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start
2.5mm min.width
G measured
at hub
AM06038v1
DS9714 - Rev 4
page 16/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
D²PAK type B packing information
Table 11. D²PAK type B reel mechanical data
Dim.
mm
Min.
A
DS9714 - Rev 4
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
Max.
13.2
26.4
30.4
page 17/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
I²PAK package information
4.4
I²PAK package information
Figure 26. I²PAK package outline
0004982_Rev_H
DS9714 - Rev 4
page 18/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
I²PAK package information
Table 12. I²PAK package mechanical data
Dim.
DS9714 - Rev 4
mm
Min.
Typ.
Max.
A
4.40
-
4.60
A1
2.40
-
2.72
b
0.61
-
0.88
b1
1.14
-
1.70
c
0.49
-
0.70
c2
1.23
-
1.32
D
8.95
-
9.35
e
2.40
-
2.70
e1
4.95
-
5.15
E
10
-
10.40
L
13
-
14
L1
3.50
-
3.93
L2
1.27
-
1.40
page 19/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
TO-220 type A package information
4.5
TO-220 type A package information
Figure 27. TO-220 type A package outline
0015988_typeA_Rev_22
DS9714 - Rev 4
page 20/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
TO-220 type A package information
Table 13. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
DS9714 - Rev 4
Typ.
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
page 21/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
TO-247 package information
4.6
TO-247 package information
Figure 28. TO-247 package outline
0075325_9
DS9714 - Rev 4
page 22/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
TO-247 package information
Table 14. TO-247 package mechanical data
Dim.
mm
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
DS9714 - Rev 4
Typ.
5.45
5.60
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
5.50
5.70
page 23/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Ordering information
5
Ordering information
Table 15. Order codes
Order code
Marking
STB18N60M2
STI18N60M2
DS9714 - Rev 4
18N60M2
Package
Packing
D2PAK
Tape and reel
I2PAK
STP18N60M2
TO-220
STW18N60M2
TO-247
Tube
page 24/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Revision history
Table 16. Document revision history
Date
Version
05-Jun-2013
1
Changes
First release.
– Modified: note 1 in Table 2
28-Feb-2014
2
– Rthj-case value in Table 3
– Minor text changes
Removed maturity status indication from cover page. The document status is
production data.
16-Apr-2018
3
Modified the title and the description in cover page.
Updated Section 4 Package information.
Minor text changes.
Added part number STI18N60M2 in I²PAK, document updated accordingly.
06-Nov-2018
4
Updated Section 2.1 Electrical characteristics curves and Section 4 Package
information.
Minor text changes.
DS9714 - Rev 4
page 25/27
STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
4.1
D²PAK (TO-263) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
D²PAK typeA packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
D²PAK type B packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.4
I²PAK package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.5
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.6
TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
DS9714 - Rev 4
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STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS9714 - Rev 4
page 27/27