STB18NF25, STD18NF25
Datasheet
Automotive-grade N-channel 250 V, 0.140 Ω typ., 17 A STripFET™ II
Power MOSFETs in D2PAK and DPAK packages
Features
TAB
Order codes
TAB
STB18NF25
2 3
2
1
3
STD18NF25
1
DPAK
D2PAK
D(2, TAB)
G(1)
•
•
•
•
VDS
RDS(on)max.
ID
PTOT
250 V
0.165 Ω
17 A
110 W
AEC-Q101 qualified
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
Applications
•
Switching applications
S(3)
AM01475v1_noZen
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique
STripFET process, which is specifically designed to minimize input capacitance and
gate charge. This renders the devices suitable for use as primary switch in advanced
high-efficiency isolated DC-DC converters for telecom and computer applications,
and applications with low gate charge driving requirements.
Product status
STB18NF25
STD18NF25
DS6601 - Rev 5 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STB18NF25, STD18NF25
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
250
V
VGS
Gate-source voltage
±20
V
Drain current (continuous) at TC = 25 °C
17
A
Drain current (continuous) at TC = 100 °C
12
A
Drain current (pulsed)
68
A
Total dissipation at TC = 25 °C
110
W
Peak diode recovery voltage slope
10
V/ns
-55 to 175
°C
ID
ID
IDM
(1)
PTOT
dv/dt (2)
Tj
Tstg
Operating junction temperature range
Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 17 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
Value
D2PAK
DPAK
1.36
30
Unit
°C/W
50
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
IAR
EAS
DS6601 - Rev 5
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
Unit
17
A
170
mJ
page 2/22
STB18NF25, STD18NF25
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
ID = 1 mA, VGS = 0 V
Min.
Typ.
250
1
µA
10
µA
±100
nA
3
4
V
0.140
0.165
Ω
Typ.
Max.
Unit
-
pF
VGS = 0 V, VDS = 250 V,
Zero gate voltage drain current
TC = 125 °C (1)
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on resistance
VGS = 10 V, ID = 8.5 A
2
Unit
V
VGS = 0 V, VDS = 250 V
IDSS
Max.
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Co(tr) (1)
Co(er) (2)
Test conditions
VDS = 25 V, f = 1 MHz,
VGS = 0 V
Equivalent capacitance time related
Equivalent capacitance
Min.
1000
-
28
-
VDS = 0 to 200 V, VGS = 0 V
energy related
Rg
Gate input resistance
f = 1 MHz, ID=0 A
Qg
Total gate charge
VDD = 200 V, ID = 17 A,
Qgs
Gate-source charge
Qgd
Gate-drain charge
VGS = 0 to 10 V
(see Figure 16. Test circuit for
gate charge behavior)
178
-
-
106
-
79
-
2
-
29.3
-
4.5
14.4
-
pF
Ω
nC
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS6601 - Rev 5
Parameter
Test conditions
Turn-on delay time
VDD = 125 V, ID = 8.5 A,
Rise time
RG = 4.7 Ω, VGS = 10 V
Turn-off delay time
(see Figure 15. Test circuit for
resistive load switching times
and Figure 20. Switching time
waveform)
Fall time
Min.
Typ.
Max.
Unit
-
ns
10.2
16.5
-
31.5
9.8
page 3/22
STB18NF25, STD18NF25
Electrical characteristics
Table 7. Source drain diode
Symbol
ISD
Parameter
Test conditions
Source-drain current
Typ.
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 17 A, VGS = 0 V
trr
Reverse recovery time
ISD = 17 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
VDD = 60 V
Reverse recovery current
(see Figure 17. Test circuit for
inductive load switching and
diode recovery times)
trr
Reverse recovery time
ISD = 17 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C
IRRM
Reverse recovery current
(see Figure 17. Test circuit for
inductive load switching and
diode recovery times)
68
-
-
-
Max.
17
-
ISDM (1)
IRRM
Min.
1.5
Unit
A
V
147
ns
0.8
μC
10.6
A
180
ns
1.1
μC
12
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS6601 - Rev 5
page 4/22
STB18NF25, STD18NF25
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1. Safe operating area for D2PAK
Figure 2. Thermal impedance for D2PAK
AM05549v1
ID
(A)
on
)
Op
er
mi ation
ted
i
by n th
ma is a
x R rea
is
D
10µs
S(
10
100µs
Li
1ms
1
10ms
Tj=175°C
Tc=25°C
Sinlge
pulse
0.1
10
1
0.1
100
VDS(V)
Figure 3. Safe operating area for DPAK
AM05561v1
ID
(A)
Figure 4. Thermal impedance for DPAK
GC20460
K
Tj=175°C, Tc=25°C
Single pulse
100
10µs
is
ea
ar S(on)
is
th x RD
in a
m
on
ati by
er ted
p
O imi
L
10
1
0.1
100
100µs
1ms
10-1
10ms
10
1
0.1
100
10-2
10-5
VDS(V)
Figure 5. Output characterisics
10-3
AM05550v1
VGS=10V
tp (s)
10-1
AM05551v1
ID
(A)
VDS=10V
7V
40
10-2
Figure 6. Transfer characteristics
ID (A)
45
10-4
30
35
6V
30
25
20
20
15
5V
10
10
5
0
DS6601 - Rev 5
0
10
20
VDS(V)
0
0
2
4
6
8
VGS(V)
page 5/22
STB18NF25, STD18NF25
Electrical characteristics curves
Figure 7. Gate charge vs gate-source voltage
Figure 8. Static drain-source on resistance
AM05552v1
VDS
VGS
(V)
(V)
VDD=200V
12
ID=17A
VDS
200
10
150
8
6
100
4
50
2
0
20
10
0
0
Qg (nC)
30
Figure 9. Output capacitance stored energy
AM05554v1
Eoss
(µJ)
Figure 10. Capacitance variations
AM05555v1
C
(pF)
4.0
3.5
1000
Ciss
3.0
2.5
2.0
100
1.5
Coss
1.0
0.5
0
0
50
100
200
150
VDS(V)
Figure 11. Normalized gate threshold voltage vs
temperature
AM05556v1
VGS(th)
(norm)
Crss
10
0.1
1
100
10
VDS(V)
Figure 12. Normalized on-resistance vs temperature
AM05557v1
RDS(on)
(norm)
2.5
1.10
1.00
2.0
0.90
0.80
1.5
0.70
0.60
1.0
0.50
0.40
0.30
-100
DS6601 - Rev 5
-50
0
50
100
150
TJ(°C)
0.5
-100
-50
0
50
100
150 TJ(°C)
page 6/22
STB18NF25, STD18NF25
Electrical characteristics curves
Figure 13. Source-drain diode forward characteristics
AM05558v1
VSD
(V)
TJ=-50°C
1.0
Figure 14. Normalized V(BR)DSS vs temperature
AM05559v1
V(BR)DSS
(norm)
1.15
0.9
1.10
0.8
1.05
TJ=25°C
0.7
TJ=175°C
0.6
0.95
0.5
0.4
DS6601 - Rev 5
1.00
0
5
10
15
20
ISD(A)
0.90
-100
-50
0
50
100
150
TJ(°C)
page 7/22
STB18NF25, STD18NF25
Test circuits
3
Test circuits
Figure 15. Test circuit for resistive load switching times
Figure 16. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
VGS
1 kΩ
100 nF
RL
IG= CONST
VGS
RG
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 17. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
B
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 18. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
V(BR)DSS
ton
VD
td(on)
90%
IDM
tf
90%
10%
10%
0
ID
VDD
toff
td(off)
tr
VDD
VGS
0
VDS
90%
10%
AM01472v1
AM01473v1
DS6601 - Rev 5
page 8/22
STB18NF25, STD18NF25
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS6601 - Rev 5
page 9/22
STB18NF25, STD18NF25
D²PAK (TO-263) type A package information
4.1
D²PAK (TO-263) type A package information
Figure 21. D²PAK (TO-263) type A package outline
0079457_25
DS6601 - Rev 5
page 10/22
STB18NF25, STD18NF25
D²PAK (TO-263) type A package information
Table 8. D²PAK (TO-263) type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.30
8.50
8.70
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
DS6601 - Rev 5
Typ.
0.40
0°
8°
page 11/22
STB18NF25, STD18NF25
D²PAK (TO-263) type A package information
Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS6601 - Rev 5
page 12/22
STB18NF25, STD18NF25
DPAK (TO-252) type A2 package information
4.2
DPAK (TO-252) type A2 package information
Figure 23. DPAK (TO-252) type A2 package outline
0068772_type-A2_rev25
DS6601 - Rev 5
page 13/22
STB18NF25, STD18NF25
DPAK (TO-252) type A2 package information
Table 9. DPAK (TO-252) type A2 mechanical data
Dim.
mm
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
5.10
5.20
5.30
e
2.159
2.286
2.413
e1
4.445
4.572
4.699
H
9.35
10.10
L
1.00
1.50
L1
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
R
V2
DS6601 - Rev 5
Typ.
5.10
5.25
6.60
1.00
0.20
0°
8°
page 14/22
STB18NF25, STD18NF25
DPAK (TO-252) type A2 package information
Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25
DS6601 - Rev 5
page 15/22
STB18NF25, STD18NF25
D²PAK and DPAK packing information
4.3
D²PAK and DPAK packing information
Figure 25. Tape outline
DS6601 - Rev 5
page 16/22
STB18NF25, STD18NF25
D²PAK and DPAK packing information
Figure 26. Reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 10. D²PAK tape and reel mechanical data
Tape
Dim.
DS6601 - Rev 5
Reel
mm
mm
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
Max.
330
13.2
26.4
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
page 17/22
STB18NF25, STD18NF25
D²PAK and DPAK packing information
Table 11. DPAK tape and reel mechanical data
Tape
Dim.
mm
mm
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
DS6601 - Rev 5
Reel
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
18.4
22.4
page 18/22
STB18NF25, STD18NF25
Ordering information
5
Ordering information
Table 12. Order codes
Order code
STB18NF25
STD18NF25
DS6601 - Rev 5
Marking
18NF25
Package
D2PAK
DPAK
Packing
Tape and reel
page 19/22
STB18NF25, STD18NF25
Revision history
Table 13. Document revision history
Date
Version
16-Nov-2009
1
First release.
19-Feb-2010
2
VDS value in Table 8 has been corrected.
3
Updated EAS in Table 4: Avalanche data, Section 4: Package information and
Section 4.3: Packing information.
26-Apr-2012
Changes
Minor text changes.
10-Sep-2015
4
Updated 4.2: DPAK (TO-252) package information
Minor text changes.
Removed maturity status indication from cover page.
Modified title and features on cover page.
07-May-2018
5
Modified Table 5. Dynamic, Table 6. Switching times and Table 7. Source
drain diode.
Modified Figure 8. Static drain-source on resistance.
Updated Section 4 Package information.
Minor text changes.
DS6601 - Rev 5
page 20/22
STB18NF25, STD18NF25
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
4.1
D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3
D²PAK and DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
DS6601 - Rev 5
page 21/22
STB18NF25, STD18NF25
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS6601 - Rev 5
page 22/22