STB20N90K5
Datasheet
N-channel 900 V, 0.21 Ω typ., 20 A MDmesh™ K5 Power MOSFET
in a D²PAK package
Features
TAB
2
1
3
D²PAK
Order code
VDS
RDS(on ) max.
ID
STB20N90K5
900 V
0.25 Ω
20 A
•
Industry’s lowest RDS(on) x area
•
•
•
•
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
D(2, TAB)
Applications
•
G(1)
Switching applications
Description
S(3)
AM01475V1
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary vertical structure. The result is a
dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.
Product status link
STB20N90K5
Product summary
Order code
STB20N90K5
Marking
20N90K5
Package
D²PAK
Packing
Tape and reel
DS11568 - Rev 4 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STB20N90K5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
20
A
ID
Drain current (continuous) at TC = 100 °C
13
A
ID (1)
Drain current (pulsed)
80
A
PTOT
Total dissipation at TC = 25 °C
250
W
dv/dt (2)
Peak diode recovery voltage slope
4.5
dv/dt (3)
MOSFET dv/dt ruggedness
50
VGS
Tj
Parameter
Operating junction temperature range
Tstg
V/ns
-55 to 150
°C
Value
Unit
Thermal resistance junction-case
0.5
°C/W
Thermal resistance junction-pcb
30
°C/W
Value
Unit
Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 20 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS, VDD= 450 V.
3. VDS ≤ 720 V.
Table 2. Thermal data
Symbol
Rthj-case
Rthj-pcb
(1)
Parameter
1. When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
DS11568 - Rev 4
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
6.5
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
500
mJ
page 2/15
STB20N90K5
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off-state
Symbol
V(BR)DSS
Parameter
Drain-source breakdown
voltage
Test conditions
VGS = 0 V, ID = 1 mA
Min.
Typ.
900
IDSS
1
µA
50
µA
±10
µA
4
5
V
0.21
0.25
Ω
Min.
Typ.
Max.
Unit
-
1500
-
pF
-
120
-
pF
-
1
-
pF
-
78
-
pF
220
-
pF
VGS = 0 V, VDS = 900 V
TC = 125 °C (1)
Gate body leakage
current
VDS = 0 V, VGS = ±20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 10 A
IGSS
Unit
V
VGS = 0 V, VDS = 900 V
Zero gate voltage drain
current
Max.
3
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Ciss
Coss
Crss
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Co(er) (1)
Equivalent capacitance
energy related
Co(tr) (2)
Equivalent capacitance
time related
Rg
Intrinsic gate resistance
f = 1 MHz , ID = 0 A
-
3.7
-
Ω
Qg
Total gate charge
VDD = 720 V, ID = 20 A
-
40
-
nC
Qgs
Gate-source charge
-
14
-
nC
Qgd
Gate-drain charge
VGS= 0 to 10 V
(see Figure 14. Test circuit for
gate charge behavior)
-
17
-
nC
VGS = 0 V,
VDS = 0 to 720 V
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
DS11568 - Rev 4
page 3/15
STB20N90K5
Electrical characteristics
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
VDD= 450 V, ID = 10 A,
-
20.2
-
ns
Rise time
RG = 4.7 Ω
-
13.5
-
ns
Turn-off delay time
VGS = 10 V
(see Figure 13. Test circuit for
resistive load switching times and
Figure 18. Switching time
waveform)
-
64.7
-
ns
-
16
-
ns
Min.
Typ.
Max.
Unit
Fall time
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
ISD
Source-drain current
-
20
A
ISDM (1)
Source-drain current
(pulsed)
-
80
A
VSD (2)
Forward on voltage
ISD = 20 A, VGS = 0 V
-
1.5
V
trr
Reverse recovery time
ISD = 20 A, di/dt = 100 A/µs,
-
517
ns
Qrr
Reverse recovery charge
-
11.4
µC
IRRM
Reverse recovery current
VDD = 60 V
(see Figure 15. Test circuit for
inductive load switching and
diode recovery times)
-
44
A
ISD = 20 A, di/dt = 100 A/µs,
-
674
ns
trr
Reverse recovery time
Qrr
Reverse recovery charge
VDD = 60 V,
-
14
µC
Reverse recovery current
Tj = 150 °C
(see Figure 15. Test circuit for
inductive load switching and
diode recovery times)
-
41.6
A
Min.
Typ.
Max.
Unit
30
-
-
V
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
V(BR)GSO
Parameter
Gate-source breakdown
voltage
Test conditions
IGS= ±1 mA, ID= 0 A
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for
additional external componentry.
DS11568 - Rev 4
page 4/15
STB20N90K5
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
ID
(A)
GIPG301120161112SOA
10 1
t p =10 µs
t p =100 µs
Operation in this area is
limited by R DS(on)
t p =1 ms
t p =10 ms
10 0
10 -1
10 -1
Figure 2. Thermal impedance
T j ≤150 °C
T c = 25°C
single pulse
10 0
10 1
10 2
V DS (V)
Figure 3. Output characteristics
ID
(A)
GIPG291120161015OCH
V GS =10, 11 V
50
40
GIPG291120161014TCH
V DS = 20 V
40
V GS =9 V
30
V GS =8 V
20
10
20
10
V GS =7 V
V GS =6 V
4
8
12
16
V DS (V)
Figure 5. Normalized V(BR)DSS vs temperature
V (BR)DSS
(norm.)
1.12
ID
(A)
50
30
0
0
Figure 4. Transfer characteristics
GIPG291120161015BDV
0
5
1.08
7
8
9
10
V GS (V)
Figure 6. Static drain-source on-resistance
R DS(on)
(Ω)
0.23
I D = 1 mA
6
GIPG291120161014RID
V GS =10 V
0.22
1.04
0.21
1.00
0.20
0.96
0.19
0.92
0.88
-50
DS11568 - Rev 4
0
50
100
T j (°C)
0.18
0
5
10
15
I D (A)
page 5/15
STB20N90K5
Electrical characteristics (curves)
Figure 7. Gate charge vs gate-source voltage
V GS
(V)
GIPG291120161013QVG V DS
(V)
V DS
14
600
10
500
8
400
6
300
4
200
2
100
0
0
10
20
30
40
0
Q g (nC)
Figure 9. Normalized gate threshold voltage vs
temperature
V GS(th)
(norm.)
GIPG291120161016VTH
GIPG291120161011CVR
10 4
C ISS
10 3
10 2
C OSS
f = 1 MHz
10 1
C RSS
10 0
10 -1
10 0
10 1
10 2
V DS (V)
Figure 10. Normalized on-resistance vs temperature
R DS(on)
(norm.)
GIPG291120161017RON
2.6
I D = 100 µA
1.2
C
(pF)
700
V DD = 720 V
I D = 20 A
12
Figure 8. Capacitance variation
V GS = 10 V
2.2
1.0
1.8
0.8
1.4
0.6
1.0
0.4
0.6
0.2
-50
0
50
100
T j (°C)
Figure 11. Maximum avalanche energy vs. starting TJ
E AS
(mJ)
GIPG291120161018EAS
0.2
-50
0
50
100
T j (°C)
Figure 12. Source-drain diode forward characteristics
VSD
(V)
GIPD280920181027SDF
1.1
500
Single pulse
I D = 6.5 A
V DD = 50 V
400
300
1
0.8
0.7
200
Tj = -50 °C
0.9
Tj = 25 °C
Tj = 150 °C
0.6
100
0
-50 -25
DS11568 - Rev 4
0.5
0
25
50
75 100 125 T J (°C)
0.4
5
10
15
ISD (A)
page 6/15
STB20N90K5
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
Figure 14. Test circuit for gate charge behavior
VDD
RL
RL
2200
+ μF
3.3
μF
VDD
VD
RG
VGS
IG= CONST
VGS
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v10
AM01468v1
Figure 15. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
VD
100 µH
fast
diode
B
B
B
3.3
µF
D
G
+
Figure 16. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 18. Switching time waveform
Figure 17. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
toff
td(off)
tr
tf
VD
90%
90%
IDM
VDD
10%
0
ID
VDD
AM01472v1
VGS
0
VDS
10%
90%
10%
AM01473v1
DS11568 - Rev 4
page 7/15
STB20N90K5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS11568 - Rev 4
page 8/15
STB20N90K5
D²PAK (TO-263) type A2 package information
4.1
D²PAK (TO-263) type A2 package information
Figure 19. D²PAK (TO-263) type A2 package outline
0079457_A2_25
DS11568 - Rev 4
page 9/15
STB20N90K5
D²PAK (TO-263) type A2 package information
Table 9. D²PAK (TO-263) type A2 package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.70
8.90
9.10
E2
7.30
7.50
7.70
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.40
0°
8°
Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS11568 - Rev 4
page 10/15
STB20N90K5
D²PAK packing information
4.2
D²PAK packing information
Figure 21. D²PAK tape outline
DS11568 - Rev 4
page 11/15
STB20N90K5
D²PAK packing information
Figure 22. D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 10. D²PAK tape and reel mechanical data
Tape
Dim.
DS11568 - Rev 4
Reel
mm
mm
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
Max.
330
13.2
26.4
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
page 12/15
STB20N90K5
Revision history
Table 11. Document revision history
Date
Revision
19-May-2016
1
Changes
First release.
Modified title and RDS(on) in features table
Modified Table 4: "Avalanche characteristics", Table 5: "On/off-state", Table 6: "Dynamic",
Table 7: "Switching times", Table 8: "Source-drain diode"
01-Dec-2016
2
Added Section 2.1: "Electrical characteristics (curves)"
Modified Section 3: "Test circuits"
Datasheet promoted from preliminary data to production data
Minor text changes
24-Jan-2017
3
04-Oct-2018
4
Modified Table 7: "Switching times".
Minor text changes.
Removed maturity status indication from cover page.
Added Figure 12. Source-drain diode forward characteristics.
Minor text changes.
DS11568 - Rev 4
page 13/15
STB20N90K5
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
DS11568 - Rev 4
page 14/15
STB20N90K5
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
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ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS11568 - Rev 4
page 15/15