STB20NM50-1

STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh™ Power MOSFET General features Type VDSS (@TJmax) RDS(on) ID STB20NM50 550V < 0.25Ω 20A STB20NM50-1 550V < 0.25Ω 20A STP20NM50 550V < 0.25Ω 20A STP20NM50FP 550V < 0.25Ω 20A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 1 3 2 1 TO-220 2 TO-220FP 3 3 12 I²PAK 1 D²PAK Internal schematic diagram Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances. Applications ■ Switching applications Order codes Part number Marking Package Packaging STB20NM50 B20NM50 D²PAK Tape & reel STB20NM50-1 B20NM50-1 I²PAK Tube STP20NM50 P20NM50 TO-220 Tube STP20NM50FP P20NM50FP TO-220FP Tube January 2007 Rev 13 1/14 www.st.com 14 Contents STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 9 STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter D²PAK / I²PAK TO-220 Unit TO-220FP VDS Drain source voltage 500 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 20 20 (1) A ID Drain current (continuous) at TC = 100°C 12.6 12.6 (1) A IDM (2) Drain current (pulsed) 80 80 (1) A PTOT Total dissipation at TC = 25°C 192 45 W Derating factor 1.54 0.36 W/°C dv/dt (3) VISO Tj Tstg Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) 15 V/ns -- Operating junction temperature Storage temperature 2500 -65 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD < 20A, di/dt < 400A/µs, VDD < V(BR)DSS, TJ < TJMAX Table 2. Thermal data Value Symbol Parameter Unit D²PAK / I²PAK TO-220 TO-220FP 0.65 2.8 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Tl Table 3. °C/W Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 10 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= 5A, VDD= 50V) 650 mJ 3/14 Electrical characteristics 2 STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±30V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 10 A Symbol gfs (1) Typ. Max. 500 1 10 µA µA ±100 µA 4 5 V 0.20 0.25 Ω Typ. Max. Unit VDS = Max rating @125°C 3 Unit V VDS = Max rating, IDSS Table 5. Min. Dynamic Parameter Forward transconductance Test conditions VDS > ID(ON) x RDS(ON)max, ID = 10A Min. 10 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 1480 285 34 pF pF pF (2) Equivalent output capacitance VGS=0, VDS =0V to 400V 130 pF Rg Gate input resistance f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 1.6 Ω Qg Total gate charge Gate-source charge Gate-drain charge Ciss Coss Crss Coss eq. Qgs Qgd VDD=400V, ID = 20A VGS =10V (see Figure 15) 40 13 19 56 nC nC nC 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/14 STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Table 6. Switching times Symbol Parameter td(on) tr td(off) tf tr(Voff) tf tc Table 7. Turn-on delay time Rise time Test conditions RG=4.7Ω, VGS=10V ns ns Off-voltage rise time Fall time Cross-over time VDD=400 V, ID=20A, 9 8.5 23 ns ns ns RG=4.7Ω, VGS=10V (see Figure 16) Source drain diode VSD (2) Forward on voltage ISD=20A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=20A,di/dt=100A/µs, VDD=100 V, Tj= 25°C Reverse recovery time Reverse recovery charge Reverse recovery current ISD=20A,di/dt=100A/µs, VDD=100 V, Tj=150°C IRRM 24 16 ns ns Source-drain current Source-drain current (pulsed) Qrr Unit 40 12 ISDM (1) trr Max. (see Figure 14) ISD IRRM Typ. Turn-off delay time Fall time Parameter Qrr Min. VDD=250 V, ID=10A, Symbol trr Electrical characteristics Test conditions (see Figure 16) (see Figure 16) Min. Typ. Max Unit 20 80 A A 1.5 V 350 4.6 26 ns µC A 435 5.9 27 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration 300µs duty cycle 1.5% 5/14 Electrical characteristics STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220/ D²PAK/I²PAK Figure 2. Thermal impedance for TO-220/ D²PAK/I²PAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characteristics Figure 6. Transfer characteristics 6/14 STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Electrical characteristics Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/14 Electrical characteristics STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Figure 13. Source-drain diode forward characteristics 8/14 STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP 3 Test circuit Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9/14 Package mechanical data 4 STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/14 Package mechanical data STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/14 L5 1 2 3 L4 STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP 5 Revision history Revision history Table 8. revision history Date Revision Changes 09-Sep-2004 9 Final version 04-Sep-2006 10 The document has been reformatted 15-Dec-2006 11 Modified Table 7.: Source drain diode 08-Jan-2007 12 Modified value in order code 26-Jan-2007 13 Modified Table 6.: Switching times 13/14 STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Please Read Carefully: Information in this document is provided solely in connection with ST products. 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