STB20NM50FD
STF20NM50FD - STP20NM50FD
N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220
FDmesh™ Power MOSFET (with fast diode)
Features
Type
VDSS
RDS(on)
RDS(on)* Qg
max
STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC
ID
20 A
20 A
20 A
■
High dv/dt and avalanche capabilities
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
■
Tight process control and high manufacturing
yields
3
3
1
2
1
TO-220FP
3
2
TO-220
1
D²PAK
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB20NM50FD
B20NM50FD
D²PAK
Tape and reel
STF20NM50FD
F20NM50FD
TO-220FP
Tube
STP20NM50FD
P20NM50FD
TO-220
Tube
April 2008
Rev 9
1/16/
www.st.com
16
Contents
STB20NM50FD - STF20NM50FD - STP20NM50FD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
................................................ 9
STB20NM50FD - STF20NM50FD - STP20NM50FD
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
D²PAK
TO-220FP
TO-220
VDS
Drain-source voltage (VGS=0)
500
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
20
20 (1)
A
ID
Drain current (continuous) at TC = 100 °C
14
14(1)
A
IDM (2)
Drain current (pulsed)
80
80(1)
A
PTOT
Total dissipation at TC = 25 °C
192
45
W
dv/dt (3)
Peak diode recovery voltage slope
20
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s;TC=25 °C)
Tstg
Storage temperature
Tj
V/ns
--
2500
V
-65 to 150
°C
150
°C
Operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 20 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
Table 3.
Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-amb max
62.5
Rthj-pcb
Thermal resistance junction-pcb max
--
Tl
Table 4.
Symbol
TO-220
D²PAK
TO-220FP
Unit
2.8
°C/W
--
62.5
°C/W
30
--
°C/W
0.65
Maximum lead temperature for
soldering purposes
300
°C
Avalanche characteristics
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
10
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 35 V)
700
mJ
3/16
Electrical characteristics
2
STB20NM50FD - STF20NM50FD - STP20NM50FD
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
Parameter
Drain-source breakdown
voltage
Test conditions
ID = 250 µA, VGS= 0
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 30 V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 10 A
Symbol
Min.
Typ.
Max.
500
1
10
µA
µA
± 100
nA
4
5
V
0.22
0.25
Ω
Typ.
Max.
Unit
VDS = Max rating,@125 °C
3
Unit
V
VDS = Max rating,
IDSS
Table 6.
Dynamic
Parameter
gfs(1)
Forward transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
VDS > ID(on) x RDS(on)max,
ID= 10 A
VDS = 25V, f =1 MHz,
VGS = 0
Min.
9
S
1380
290
40
pF
pF
pF
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
130
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
2.8
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
Coss eq.(2)
1.
On/off states
VDD = 400 V, ID = 20 A
VGS = 10 V
(see Figure 16)
38
18
10
53
nC
nC
nC
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
tr(Voff)
tf
tc
Table 8.
Symbol
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Electrical characteristics
Test conditions
VDD = 250 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Parameter
Test conditions
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
ISD = 20 A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =20 A, di/dt =100 A/µs,
VDD = 60 V, TJ=150 °C
(see Figure 17)
IRRM
Typ
Max
Unit
22
20
ns
ns
6
15
30
ns
ns
ns
Source drain diode
ISD
ISDM (1)
trr
Qrr
Min
Min
Typ
245
2
16
Max
Unit
20
80
A
A
1.5
V
ns
nC
A
1. Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
5/16
Electrical characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 /
D²PAK
Figure 3.
Thermal impedance for TO-220 /
D²PAK
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
6/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
Figure 8.
Transconductance
Electrical characteristics
Figure 9.
Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
7/16
Electrical characteristics
Figure 14. Source-drain diode forward
characteristics
8/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
STB20NM50FD - STF20NM50FD - STP20NM50FD
3
Test circuit
Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
Figure 18. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
9/16
Package mechanical data
4
STB20NM50FD - STF20NM50FD - STP20NM50FD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
11/16
Package mechanical data
STB20NM50FD - STF20NM50FD - STP20NM50FD
TO-220FP mechanical data
mm.
Dim.
Min.
A
4.40
inch
Typ
Max.
Min.
4.60
0.173
Typ.
0.181
Max.
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.017
0.027
F
0.75
1.00
0.030
0.039
F1
1.15
1.50
0.045
0.067
F2
1.15
1.50
0.045
0.067
G
4.95
5.20
0.195
0.204
G1
2.40
2.70
0.094
0.106
H
10
10.40
0.393
L2
16
0.409
0.630
28.6
30.6
1.126
L4
9.80
10.60
0.385
1.204
0.417
L5
2.9
3.6
0.114
0.141
L6
15.90
16.40
0.626
0.645
L7
9
9.30
0.354
0.366
Dia
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
Dia
F
F1
L7
L2
L5
1 2 3
L4
7012510-I
12/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
Package mechanical data
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
Max
Min
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
2.54
4.88
15
2.49
2.29
1.27
1.30
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
0.4
0°
Typ
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
0079457_M
13/16
Packaging mechanical data
5
STB20NM50FD - STF20NM50FD - STP20NM50FD
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
14/16
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB20NM50FD - STF20NM50FD - STP20NM50FD
6
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
21-Jun-2004
8
21-Apr-2008
9
Changes
Figure 4: Safe operating area for TO-220FP and Figure 5: Thermal
impedance for TO-220FP added.
15/16
STB20NM50FD - STF20NM50FD - STP20NM50FD
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