STB22N60DM6

STB22N60DM6 Datasheet N-channel 600 V, 200 mΩ typ., 15 A, MDmesh DM6 Power MOSFET in a D²PAK package Features TAB 2 3 1 D²PAK D(2, TAB) Order code VDS RDS(on) max. ID STB22N60DM6 600 V 240 mΩ 15 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications • Switching applications S(3) AM01476v1_tab Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB22N60DM6 Product summary Order code STB22N60DM6 Marking 22N60DM6 Package D²PAK Packing Tape and reel DS12932 - Rev 2 - September 2020 For further information contact your local STMicroelectronics sales office. www.st.com STB22N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 15 A Drain current (continuous) at TC = 100 °C 9.5 A Drain current (pulsed) 42 A Total power dissipation at TC = 25 °C 130 W dv/dt (2) Peak diode recovery voltage slope 100 V/ns di/dt (2) Peak diode recovery current slope 1000 A/μs dv/dt (3) MOSFET dv/dt ruggedness 100 V/ns -55 to 150 °C Value Unit VGS ID IDM (1) PTOT Tstg Tj Parameter Storage temperature range Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 15 A, VDS (peak) < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.96 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 30 °C/W Value Unit 1. When mounted on FR-4 board of 1 inch², 2oz Cu. Table 3. Avalanche characteristics Symbol DS12932 - Rev 2 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 3.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 320 mJ page 2/15 STB22N60DM6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 600 Zero gate voltage drain current 1 µA 100 µA ±5 µA 4 4.75 V 200 240 mΩ Min. Typ. Max. Unit - 800 - pF - 75 - pF - 4.7 - pF VGS = 0 V, VDS = 600 V, TC = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 7.5 A Unit V VGS = 0 V, VDS = 600 V IDSS Max. 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance (1) Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 157 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 5.8 - Ω Qg Total gate charge VDD = 480 V, ID = 15 A, - 20.6 - nC Qgs Gate-source charge VGS = 0 to 10 V - 5.3 - nC Qgd Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) - 10.5 - nC Coss eq. 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12932 - Rev 2 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 7.5 A, - 11.5 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 6.4 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 8 - ns - 35.6 - ns Fall time page 3/15 STB22N60DM6 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 15 A ISDM(1) Source-drain current (pulsed) - 42 A VSD(2) Forward on voltage VGS = 0 V, ISD = 15 A - 1.6 V trr Reverse recovery time ISD = 15 A, di/dt = 100 A/µs, - 88 ns Qrr Reverse recovery charge VDD = 60 V - 0.299 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 6.8 A trr Reverse recovery time ISD = 15 A, di/dt = 100 A/µs, - 160 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 0.864 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 10.8 A IRRM IRRM 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %. DS12932 - Rev 2 page 4/15 STB22N60DM6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Normalized thermal impedance Figure 1. Safe operating area ID (A) GADG130220191113SOA 10 1 tp = 10µs 10 0 Operation in this area is limited by R DS(on) tp = 100µs 10 -1 tp = 1ms T j ≤150 °C T c = 25°C single pulse 10 -2 10 -1 10 10 0 tp = 10ms VDS (V) 10 2 1 Figure 3. Output characteristics ID (A) Figure 4. Transfer characteristics ID (A) GADG110220191516OCH VGS = 10 V 36 VGS = 9 V 36 VGS = 8 V 30 30 24 24 VGS = 7 V 18 12 6 6 VGS = 6 V 3 6 9 12 15 18 VDS (V) 0 3 Figure 5. Gate charge vs gate-source voltage VDS (V) 600 GADG110220191517QVG VGS (V) VDD = 480 V, ID = 15 A 10 5 6 7 8 9 VGS (V) Figure 6. Capacitance variations C (pF) GADG110220191516CVR 10 3 CISS 8 Qgd Qgs 4 12 Qg 500 400 VDS = 18 V 18 12 0 0 GADG110220191516TCH 10 2 300 6 COSS 200 4 VDS 100 0 0 DS12932 - Rev 2 10 1 CRSS 2 4 8 12 16 20 24 0 Qg (nC) 10 0 10 0 10 1 10 2 VDS (V) page 5/15 STB22N60DM6 Electrical characteristics (curves) Figure 7. Static drain-source on-resistance RDS(on) (mΩ) GADG110220191515RID 215 Figure 8. Normalized on-resistance vs temperature RDS(on) (norm.) 2.5 210 2.0 VGS = 10 V 205 1.5 200 1.0 195 0.5 190 0 3 6 9 12 15 ID (A) Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG191220180856VTH 0.0 -75 VGS = 10 V -25 25 75 125 Tj (°C) Figure 10. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GADG191220180856BDV 1.10 1.1 ID = 1 mA 1.05 1.0 0.9 1.00 ID = 250 µA 0.95 0.8 0.90 0.7 0.6 -75 GADG191220180856RON -25 25 75 125 Tj (°C) Figure 11. Output capacitance stored energy E (μJ) GADG110220191544EOS 7 0.85 -75 -25 25 75 125 Figure 12. Source-drain diode forward characteristics VSD (V) GADG110220191515SDF TJ = -50 °C 1.0 6 TJ = 25 °C 0.9 5 4 0.8 3 Tj (°C) TJ = 150 °C 0.7 2 0.6 1 0 0 DS12932 - Rev 2 100 200 300 400 500 600 VDS (V) 0.5 0 3 6 9 12 15 ISD (A) page 6/15 STB22N60DM6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD VD IG= CONST VGS + pulse width RG VGS D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12932 - Rev 2 page 7/15 STB22N60DM6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D²PAK (TO-263) type A package information Figure 19. D²PAK (TO-263) type A package outline 0079457_26 DS12932 - Rev 2 page 8/15 STB22N60DM6 D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS12932 - Rev 2 Typ. 0.40 0° 8° page 9/15 STB22N60DM6 D²PAK (TO-263) type A package information Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint_26 DS12932 - Rev 2 page 10/15 STB22N60DM6 D²PAK packing information 4.2 D²PAK packing information Figure 21. D²PAK tape outline DS12932 - Rev 2 page 11/15 STB22N60DM6 D²PAK packing information Figure 22. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. D²PAK tape and reel mechanical data Tape Dim. DS12932 - Rev 2 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 12/15 STB22N60DM6 Revision history Table 10. Document revision history DS12932 - Rev 2 Date Version Changes 21-Feb-2019 1 First release. 09-Sep-2020 2 Modified Table 1. Absolute maximum ratings. page 13/15 STB22N60DM6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS12932 - Rev 2 page 14/15 STB22N60DM6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12932 - Rev 2 page 15/15