STB24N65M2

STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 Ω typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID 650 V 0.23 Ω 16 A STB24N65M2 STF24N65M2 STP24N65M2     Figure 1: Internal schematic diagram Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications  Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order codes Marking STB24N65M2 STF24N65M2 STP24N65M2 November 2014 DocID026475 Rev 2 This is information on a product in full production. 24N65M2 Package Packaging D2PAK Tape and reel TO-220FP TO-220 Tube 1/20 www.st.com Contents STB24N65M2, STF24N65M2, STP24N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 D2PAK package information ........................................................... 10 4.2 TO-220FP package information ...................................................... 13 4.3 TO-220 type A package information................................................ 15 5 Packaging mechanical data .......................................................... 17 6 Revision history ............................................................................ 19 2/20 DocID026475 Rev 2 STB24N65M2, STF24N65M2, STP24N65M2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Value Symbol Parameter Unit D2PAK TO-220FP TO-220 VGS Gate-source voltage ID 16 16 A 10 10 (1) A Drain current (pulsed) 64 (1) A Total dissipation at TC = 25 °C 150 Drain current (continuous) at TC = 100 °C (2) PTOT V (1) Drain current (continuous) at TC = 25 °C ID IDM ± 25 64 30 W dv/dt (3) Peak diode recovery voltage slope 15 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 - 55 to 150 Max. operating junction temperature V °C Notes: (1)Limited (2)Pulse (3)I SD (4)V by maximum junction temperature. width limited by safe operating area. ≤ 16 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS. DS ≤ 520 V Table 3: Thermal data Value Symbol Parameter D2PAK Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max (1) Rthj-amb Thermal resistance junction-ambient max Unit TO-220 TO-220FP 0.83 4.2 °C/W 30 °C/W 62.5 °C/W Notes: (1)When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by T jmax) 2.2 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50V) 650 mJ DocID026475 Rev 2 3/20 Electrical characteristics 2 STB24N65M2, STF24N65M2, STP24N65M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 650 V IGSS Min. Typ. Max. 650 Unit V 1 µA VDS = 650 V, TC=125 °C 100 µA Gate-body leakage current (VDS = 0) VGS = ± 25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 8 A 0.185 0.23 Ω Min. Typ. Max. Unit - 1060 - pF - 47.5 - - 1.65 - pF 2 Table 6: Dynamic Symbol Ciss Parameter Test conditions Input capacitance Coss VDS = 100 V, f = 1 MHz, VGS = 0 Output capacitance Reverse transfer capacitance Crss C oss eq. (1) pF Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 - 229 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 - 7 - Ω Qg Total gate charge - 29 - nC - 3.8 - nC - 14 - nC Qgs Gate-source charge Qgd Gate-drain charge VDD = 520 V, ID = 16 A, VGS = 10 V Notes: (1) C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS increases from 0 to 80% VDSS Table 7: Switching times Symbol td(on) tr td(off) tf 4/20 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 325 V, ID = 8 A, RG = 4.7 Ω, VGS = 10 V Fall time DocID026475 Rev 2 Min. Typ. Max. Unit - 10 - ns - 9.5 - ns - 68 - ns - 25.5 - ns STB24N65M2, STF24N65M2, STP24N65M2 Electrical characteristics Table 8: Source drain diode Symbol ISD Parameter Test conditions Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 16 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Typ. Max. Unit 16 A - 64 A - 1.6 V - ISDM(1) trr Min. ISD = 16 A, di/dt = 100 A/µs VDD = 60 V Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 16 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C - 350 ns - 4.5 µC - 26 A - 496 ns - 6.5 µC - 25.5 A Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID026475 Rev 2 5/20 Electrical characteristics 2.1 STB24N65M2, STF24N65M2, STP24N65M2 Electrical characteristics (curves) Figure 2: Safe operating area for D2PAK and TO-220 Figure 3: Thermal impedance for D2PAK and TO-220 Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP Figure 6: Output characteristics GIPD180920141533FSR ID (A) V GS= 7, 8, 9, 10 V 35 Figure 7: Transfer characteristics GIPD180920141600FSR ID (A) V DS= 20 V 35 6V 30 30 5V 25 25 20 20 15 15 4V 10 5 0 0 6/20 10 5 4 8 12 16 20 24 28 V DS(V) DocID026475 Rev 2 0 0 2 4 6 8 V GS(V) STB24N65M2, STF24N65M2, STP24N65M2 Electrical characteristics Figure 8: Gate charge vs gate-source voltage GIPD041020141607FSR V DS (V) V GS (V) 12 600 V DD = 520 V ID = 16 A V DS 10 500 8 400 6 300 4 200 2 100 Figure 9: Static drain-source on-resistance GIPD180920141613FSR R DS(on) (Ω) V GS= 10V 0.196 0.193 0.190 0.187 0.184 0.181 0 0 5 10 15 20 0.178 0 30 Q g(nC) 25 Figure 10: Capacitance variations GIPD041020141619FSR C (pF) 0.175 0 4 8 12 16 ID(A) Figure 11: Normalized gate threshold voltage vs temperature Ciss 1000 100 Coss 10 f= 1 MHz Crss 1 0.1 0.1 1 10 100 V DS(V) Figure 12: Normalized on-resistance GIPD180920141459FSR R DS(on) (norm) 2.2 Figure 13: Normalized V(BR)DSS vs temperature V GS= 10V 1.8 1.4 1 0.6 0.2 -75 -25 25 75 125 T j(°C) DocID026475 Rev 2 7/20 Electrical characteristics STB24N65M2, STF24N65M2, STP24N65M2 Figure 14: Source-drain diode forward characteristics Figure 15: Output capacitance stored energy GIPD041020141624FSR V SD (V) T j= -50°C 1.1 GIPD041020141629FSR E (µJ) 8 1 T j= 25°C 0.9 6 4 0.8 0.7 T j= 150°C 2 0.6 0.5 8/20 0 0 4 8 12 16 ISD(A) DocID026475 Rev 2 0 100 200 300 400 500 600 V DS(V) STB24N65M2, STF24N65M2, STP24N65M2 3 Test circuits Test circuits Figure 16: Switching times test circuit for resistive load Figure 18: Test circuit for inductive load switching and diode recovery times Figure 20: Unclamped inductive waveform DocID026475 Rev 2 Figure 17: Gate charge test circuit Figure 19: Unclamped inductive load test circuit Figure 21: Switching time waveform 9/20 Package mechanical data 4 STB24N65M2, STF24N65M2, STP24N65M2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D2PAK package information Figure 22: D²PAK (TO-263) drawing 10/20 DocID026475 Rev 2 STB24N65M2, STF24N65M2, STP24N65M2 Package mechanical data Table 9: D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° DocID026475 Rev 2 8° 11/20 Package mechanical data STB24N65M2, STF24N65M2, STP24N65M2 Figure 23: D²PAK footprint All the dimensions are in millimeters. 12/20 DocID026475 Rev 2 STB24N65M2, STF24N65M2, STP24N65M2 4.2 Package mechanical data TO-220FP package information Figure 24: TO-220FP package outline DocID026475 Rev 2 13/20 Package mechanical data STB24N65M2, STF24N65M2, STP24N65M2 Table 10: TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/20 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID026475 Rev 2 STB24N65M2, STF24N65M2, STP24N65M2 4.3 Package mechanical data TO-220 type A package information Figure 25: TO-220 type A package outline DocID026475 Rev 2 15/20 Package mechanical data STB24N65M2, STF24N65M2, STP24N65M2 Table 11: TO-220 type A mechanical data mm Dim. Min. Max. 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/20 Typ. A 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID026475 Rev 2 STB24N65M2, STF24N65M2, STP24N65M2 5 Packaging mechanical data Packaging mechanical data Figure 26: Tape DocID026475 Rev 2 17/20 Packaging mechanical data STB24N65M2, STF24N65M2, STP24N65M2 Figure 27: Reel T 40mm min. Access hole At slot location B D C N A G measured Tape slot In core for Full radius At hub Tape start 2.5mm min.width AM06038v1 Table 12: D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 18/20 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID026475 Rev 2 Min. Max. 330 13.2 26.4 30.4 STB24N65M2, STF24N65M2, STP24N65M2 6 Revision history Revision history Table 13: Document revision history Date Revision Changes 09-Jun-2014 1 First release. 11-Nov-2014 2 Document status promoted from preliminary to production data. DocID026475 Rev 2 19/20 STB24N65M2, STF24N65M2, STP24N65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved 20/20 DocID026475 Rev 2