STB26NM60ND, STF26NM60ND,
STP26NM60ND, STW26NM60ND
N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
Features
TAB
Order codes
VDS @ Tjmax
RDS(on) max
ID
650 V
0.175
21 A
3
1
STB26NM60ND
D2 PAK
3
1
2
STF26NM60ND
TO-220FP
STP26NM60ND
TAB
STW26NM60ND
• 100% avalanche tested
3
1
2
2
• Low input capacitance and gate charge
3
1
TO-220
• Low gate input resistance
TO-247
Figure 1. Internal schematic diagram
• Extremely high dv/dt and avalanche
capabilities
Applications
'7$%
• Switching applications
Description
*
6
!-V
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
Packages
Packaging
D²PAK
Tape and reel
STB26NM60ND
STF26NM60ND
TO-220FP
26NM60ND
STP26NM60ND
TO-220
STW26NM60ND
TO-247
November 2013
This is information on a product in full production.
DocID025283 Rev 1
Tube
1/23
www.st.com
Contents
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................. 7
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
D2PAK, TO-220,
TO-247
VDS
Drain-source voltage
600
VGS
Gate-source voltage
±25
Unit
TO-220FP
V
V
(1)
A
ID
Drain current (continuous) at TC = 25 °C
21
21
ID
Drain current (continuous) at TC = 100 °C
13
13(1)
A
Drain current (pulsed)
84
84(1)
A
Total dissipation at TC = 25 °C
190
35
W
IDM
(2)
PTOT
dv/dt(3)
Peak diode recovery voltage slope
40
V/ns
dv/dt(4)
MOSFET dv/dt ruggedness
40
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
Tstg
Storage temperature
TJ
Max. operating junction temperature
2500
V
–55 to 150
°C
150
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
ISD ≤ 21 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
4.
VDS ≤ 480 V
Table 3. Thermal data
Value
Symbol
Parameter
Rthj-case
Thermal resistance junctioncase max
Rthj-amb
Thermal resistance junctionambient max
Rthj-pcb(1)
Thermal resistance junctionpcb max
Unit
D²PAK
TO-220FP
0.66
3.57
TO-247
0.66
62.5
30
TO-220
°C/W
50
°C/W
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu
DocID025283 Rev 1
3/23
23
Electrical ratings
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 4. Avalanche characteristics
4/23
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
4
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAS, VDD = 50 V)
100
mJ
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
2
Electrical characteristics
Electrical characteristics
(TCASE=25 °C unless otherwise specified).
Table 5. On/off states
Value
Symbol
Parameter
Test conditions
Unit
Min.
Typ.
Max.
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 600 V
VDS = 600 V @TC= 125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
5
V
RDS(on)
Static drain-source
on- resistance
VGS = 10 V, ID = 10.5 A
0.145
0.175
Ω
Min.
Typ.
Max.
Unit
-
1817
-
pF
-
90
-
pF
-
4.4
-
pF
-
270
-
pF
-
22
-
ns
-
14.5
-
ns
-
69
-
ns
-
27.5
-
ns
V(BR)DSS
600
3
V
Table 6. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
td(on)
Turn-on delay time
tr
td(off)
tf
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0
VGS = 0, VDS = 0 to 480 V
VDD = 300 V, ID = 10.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 23),
(see Figure 18)
Rise time
Turn-off delay time
Fall time
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Rg
-
54.6
-
nC
-
9.1
-
nC
Gate-drain charge
VDD = 480 V, ID = 21 A,
VGS = 10 V,
(see Figure 19)
-
32.5
-
nC
Intrinsic gate resistance
f = 1 MHz, ID = 0
-
2.5
-
Ω
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
DocID025283 Rev 1
5/23
23
Electrical characteristics
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Typ.
Max.
Unit
Source-drain current
-
21
A
ISDM
(1)
Source-drain current (pulsed)
-
84
A
VSD
(2)
Forward on voltage
-
1.6
V
ISD
ISD = 21 A, VGS = 0
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 21 A, VDD = 60 V
di/dt=100 A/µs
(see Figure 20)
ISD = 21 A,VDD = 60 V
di/dt=100 A/µs,
TJ = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
6/23
Min.
DocID025283 Rev 1
-
170
ns
-
1.39
µC
-
14
A
-
230
ns
-
2.24
µC
-
18
A
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2. Safe operating area for D²PAK and
TO-220
Figure 3. Thermal impedance for D²PAK and
TO-220
AM15518v1
Op
Lim era
ite tion
d
by in th
m is
ax ar
R e
10
DS a
(o
n)
is
ID
(A)
10µs
100µs
1ms
10ms
1
Tj=150°C
Tc=25°C
Single
pulse
0.1
0.1
10
1
100
VDS(V)
Figure 4. Safe operating area for TO-220FP
ID
(A)
10
1
Figure 5. Thermal impedance for TO-220FP
AM16149v1
is
ea )
ar S(on
D
t
R
in ax
n
io y m
t
b
ra
pe ed
O mit
i
L
s
hi
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
0.1
10
1
100
VDS(V)
Figure 6. Safe operating area for TO-247
AM15519v1
ID
(A)
(o
n)
a
is
10µs
DS
Op
Lim era
ite tion
d
by in th
m is a
ax
R re
10
Figure 7. Thermal impedance for TO-247
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
0.1
1
10
100
VDS(V)
DocID025283 Rev 1
7/23
23
Electrical characteristics
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Figure 8. Output characteristics
Figure 9. Transfer characteristics
AM16017v1
ID (A)
8V
VGS=9, 10V
50
AM16018v1
ID
(A)
50
VDS=18V
40
40
7V
30
30
20
20
10
10
6V
5V
0
0
10
5
15
20
Figure 10. Static drain-source on-resistance
AM16019v1
RDS(on)
(Ω)
0.150
0
VDS(V)
VGS=10V
4
8
6
VGS(V)
10
Figure 11. Gate charge vs gate-source voltage
AM16020v1
VDS
VGS
(V)
12
0.148
2
0
(V)
VDD=480V
ID=21A
VDS
500
10
400
0.146
8
0.144
300
6
0.142
200
4
0.140
100
2
0.138
0.136
0
2
6
4
8
10 12 14 16
Figure 12. Capacitance variations
0
10
20
30
50
40
60
0
Qg(nC)
Figure 13. Normalized gate threshold voltage vs
temperature
AM16021v1
C
(pF)
0
ID(A)
AM16034v1
VGS(th)
(norm)
1.10
ID = 250 µA
10000
Ciss
1.00
1000
0.90
100
Coss
0.80
10
Crss
1
0.1
8/23
1
10
100
VDS(V)
0.70
-50
DocID025283 Rev 1
-25
0
25
50
75 100
TJ(°C)
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Figure 14. Normalized on-resistance vs
temperature
AM16035v1
RDS(on)
(norm)
2.1
ID = 10.5 A
VGS = 10 V
1.9
Electrical characteristics
Figure 15. Source-drain diode forward
characteristics
AM16037v1
VSD
(V)
TJ=-50°C
1.0
1.2
1.7
1
1.5
0.8
TJ=150°C
1.3
0.6
1.1
0.4
0.9
0.2
0.7
0.5
-50 -25
0
0
25
50
75 100
AM10636v1
VDS
(norm)
1.09
0
TJ(°C)
Figure 16. Normalized VDS vs temperature
2
4
6
8
10 12 14 16 18 ISD(A)
Figure 17. Output capacitance stored energy
AM16033v1
Eoss
(µJ)
10
9
ID = 1mA
1.07
1.05
8
1.03
7
1.01
6
0.99
5
4
0.97
3
2
0.95
0.93
0.91
-50 -25
TJ=25°C
0
25
50
75 100
TJ(°C)
DocID025283 Rev 1
1
0
0
100
200 300
400
500
600
VDS(V)
9/23
23
Test circuits
3
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 20. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 21. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
90%
90%
IDM
tf
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
10/23
0
DocID025283 Rev 1
10%
AM01473v1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID025283 Rev 1
11/23
23
Package mechanical data
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 8. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
12/23
Max.
0.4
0°
8°
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Package mechanical data
Figure 24. D²PAK (TO-263) drawing
0079457_T
Figure 25. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
DocID025283 Rev 1
13/23
23
Package mechanical data
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
14/23
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Package mechanical data
Figure 26. TO-220FP drawing
7012510_Rev_K_B
DocID025283 Rev 1
15/23
23
Package mechanical data
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
16/23
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Package mechanical data
Figure 27. TO-220 type A drawing
?TYPE!?2EV?4
DocID025283 Rev 1
17/23
23
Package mechanical data
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 11. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
18/23
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID025283 Rev 1
5.70
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Package mechanical data
Figure 28. TO-247 drawing
0075325_G
DocID025283 Rev 1
19/23
23
Packing mechanical data
5
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Packing mechanical data
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
20/23
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID025283 Rev 1
Min.
Max.
330
13.2
26.4
30.4
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Packing mechanical data
Figure 29. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
W
K0
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 30. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
DocID025283 Rev 1
21/23
23
Revision history
6
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Revision history
Table 13. Document revision history
Date
Revision
23-Sep-2013
1
First release.
2
–
–
–
–
–
–
–
–
–
–
28-Nov-2013
22/23
Changes
Modified: ID value in cover page
Modified: ID and IDM valued in Figure 2
Modified: Rthj-case values
Modified: values in Table 4
Modified: dv/dt value in Table 5, IGSS test condition
Modified: typical and ID values in Table 5
Modified: ISD, typical and max values in Table 7
Updated: Figure 4, 13, 14, 15 and 16
Added: Figure 17
Minor text changes
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
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