STB270N4F3

STB270N4F3 Automotive-grade N-channel 40 V, 1.6 mΩ typ., 160 A STripFET™ F3 Power MOSFET in a D2PAK package Datasheet - production data Features Type VDS RDS(on) max STB270N4F3 40 V 2.0 mΩ 7$%  ID PTOT 160 A 330 W • Designed for automotive applications and AEC-Q101 qualified  • 100% avalanche tested • Standard threshold drive '3$. Applications Figure 1. Internal schematic diagram • Switching application Description '7$% This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. * 6 $0Y Table 1. Device summary Order codes Marking Package Packaging STB270N4F3 270N4F3 D²PAK Tape and reel February 2015 This is information on a product in full production. DocID13208 Rev 5 1/15 www.st.com Contents STB270N4F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .............................. 6 3 Test circuit 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 ................................................ 8 D2PAK package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 DocID13208 Rev 5 STB270N4F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 160 A ID(1) Drain current (continuous) at TC=100 °C 160 A Drain current (pulsed) 640 A IDM (2) PTOT Total dissipation at TC = 25 °C 330 W dv/dt(3) Peak diode recovery voltage slope 3.5 V/ns EAS(4) Single pulse avalanche energy 1 J TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Value Unit 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 120 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 4. Starting Tj=25 °C, ID =80 A, VDD= 32 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 0.45 °C/W Rthj-pcb(1) Thermal resistance junction-pcb max 35 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. DocID13208 Rev 5 3/15 15 Electrical characteristics 2 STB270N4F3 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Drain-source breakdown voltage ID = 250 μA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 40 V VDS = 40 V, Tj = 125 °C IGSS Gate body leakage current VGS = ±20 V (VDS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 80 A Min. Typ. Max. 40 Unit V 2 1.6 10 100 µA µA ±200 nA 4 V 2.0 mΩ Table 5. Dynamic Symbol Parameter gfs (1) Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS =15 V, ID = 80 A VDS =25 V, f=1 MHz, VGS=0 VDD=20 V, ID = 160 A VGS =10 V (see Figure 14) Min. Typ. Max. Unit - 200 S - 7400 pf - 1800 pF - 47 pF - 110 - 27 nC - 25 nC Min. Typ. - 22 - ns - 180 - ns - 110 - ns - 45 - ns 150 nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 6. Switching times Symbol td(on) tr td(off) tf 4/15 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD=20 V, ID= 80 A, RG=4.7 Ω, VGS=10 V (see Figure 16) Fall time DocID13208 Rev 5 Max. Unit STB270N4F3 Electrical characteristics Table 7. Source drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min Typ. Max Unit Source-drain current - 160 A Source-drain current (pulsed) - 640 A 1.5 V Forward on voltage ISD=80 A, VGS=0 - trr Reverse recovery time - 70 ns Qrr Reverse recovery charge - 225 nC IRRM Reverse recovery current ISD=160 A, di/dt = 100 A/µs, VDD=32 V, Tj=150 °C (see Figure 15) - 3.2 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% DocID13208 Rev 5 5/15 15 Electrical characteristics 2.1 STB270N4F3 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance *,3')65 ,' $ HD  DU RQ LV '6 WK [5  LQ D Q P WLR \ UD GE SH LWH 2 LP /  72(+ . LV į   —V  PV    PV   7Mƒ& 7F ƒ& 6LQJOHSXOVH     6LQJOHSXOVH   9'69     WSV Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Static drain-source on-resistance Figure 7. Normalized BVDSS vs temperature HV29690 RDS(on) (mΩ) 2.10 2.00 1.90 VGS=10V 1.80 1.70 1.60 1.50 1.40 1.30 0 6/15 20 40 60 80 100 120 140 ID(A) DocID13208 Rev 5 STB270N4F3 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics AM04229v1 VSD (V) 0.95 0.90 0.85 0.80 TJ=-50°C TJ=25°C 0.75 0.70 0.65 TJ=175°C 0.60 0.55 0.50 0.45 0.40 0 20 40 60 80 100 120 140 160 180 ISD(A) DocID13208 Rev 5 7/15 15 Test circuit 3 STB270N4F3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/15 0 DocID13208 Rev 5 10% AM01473v1 STB270N4F3 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D2PAK package information Figure 19. D²PAK (TO-263) outline B9 DocID13208 Rev 5 9/15 15 Package information STB270N4F3 Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/15 Max. 0.4 0° 8° DocID13208 Rev 5 STB270N4F3 Package information Figure 20. D²PAK footprint(a) )RRWSULQW a. All dimension are in millimeters DocID13208 Rev 5 11/15 15 Packing information 5 STB270N4F3 Packing information Figure 21. Tape SLWFKHVFXPXODWLYH WROHUDQFHRQWDSHPP 7 3 7RSFRYHU WDSH 3 ' ( ) % . )RUPDFKLQHUHIRQO\ LQFOXGLQJGUDIWDQG UDGLLFRQFHQWULFDURXQG% : % $ 3 ' 8VHUGLUHFWLRQRIIHHG 5 %HQGLQJUDGLXV 8VHUGLUHFWLRQRIIHHG $0Y 12/15 DocID13208 Rev 5 STB270N4F3 Packing information Figure 22. Reel 5((/',0(16,216 PPPLQ $FFHVVKROH $WVORWORFDWLRQ 7 % ' & 1 $ *PHDVXUHG DWKXE 7DSHVORW LQFRUHIRU WDSHVWDUWPP PLQZLGWK )XOOUDGLXV $0Y Table 9. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID13208 Rev 5 Min. Max. 330 13.2 26.4 30.4 13/15 15 Revision history 6 STB270N4F3 Revision history Table 10. Revision history Date Revision 07-Feb-2007 1 Initial release. 02-Apr-2008 2 Some value changes onTable 2 06-May-2009 3 Changed: Description and Figure 12: Source-drain diode forward characteristics 14-Jul-2009 4 Removed package and mechanical data: TO-220 5 The part number STI270N4F3 has been moved to a separate document. Updated title, features and description cover page. Updated Table 2: Absolute maximum ratings, Table 3: Thermal data. Updated Section 4: Package information and Section 5: Packing information. Minor text changes. 26-Feb-2015 14/15 Changes DocID13208 Rev 5 STB270N4F3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID13208 Rev 5 15/15 15