STB28N60M2, STI28N60M2,
STP28N60M2, STW28N60M2
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2
Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247
Datasheet - production data
Features
Order code
VDS @ TJmax
RDS(on) max.
ID
650 V
0.150 Ω
22 A
STB28N60M2
STI28N60M2
STP28N60M2
STW28N60M2
Figure 1: Internal schematic diagram
Applications
D ( 2 TAB )
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Switching applications
LCC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
G(1)
S(3)
AM15572V1
Table 1: Device summary
Order code
Marking
STB28N60M2
STI28N60M2
STP28N60M2
28N60M2
STW28N60M2
March 2017
Package
Packing
D²PAK
Tape and reel
I²PAK
TO-220
Tube
TO-247
DocID025254 Rev 4
This is information on a product in full production.
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www.st.com
Contents
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 9
4
Package information ..................................................................... 10
5
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4.1
D²PAK package information ............................................................ 10
4.2
D²PAK packing information ............................................................. 13
4.3
I²PAK package information ............................................................. 15
4.4
TO-220 type A package information................................................ 16
4.5
TO-247 package information ........................................................... 18
Revision history ............................................................................ 20
DocID025254 Rev 4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
22
A
ID
VGS
Drain current (continuous) at TC = 100 °C
14
A
IDM(1)
Drain current (pulsed)
88
A
PTOT
Total dissipation at TC = 25 °C
170
W
dv/dt(2)
Peak diode recovery voltage slope
15
V/ns
dv/dt(3)
MOSFET dv/dt ruggedness
50
V/ns
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operating junction temperature range
Notes:
(1)Pulse
(2)I
SD
(3)V
width limited by safe operating area.
≤ 22 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V.
DS
≤ 480 V
Table 3: Thermal data
Value
Symbol
Parameter
Unit
D²PAK
Rthj-case
I²PAK
Thermal resistance junction-case max
max(1)
Rthj-pcb
Thermal resistance junction-pcb
Rthj-amb
Thermal resistance junction-ambient max
TO-220
TO-247
0.74
°C/W
30
°C/W
62.5
62.5
50
°C/W
Notes:
(1)When
mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax)
3.6
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)
350
mJ
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Electrical characteristics
2
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 5: On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
600
Unit
V
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V,
TC = 125 °C(1)
100
µA
±10
µA
3
4
V
0.135
0.150
Ω
Min.
Typ.
Max.
Unit
-
1440
-
pF
-
70
-
pF
-
2
-
pF
pF
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 11 A
2
Notes:
(1)
Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
104
-
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
5.5
-
Ω
Qg
Total gate charge
36
-
nC
Qgs
Gate-source charge
-
7.2
-
nC
Qgd
Gate-drain charge
VDD = 480 V, ID = 22 A,
VGS = 0 to 10 V (see Figure 17:
"Test circuit for gate charge
behavior")
-
-
16
-
nC
VDS= 100 V, f = 1 MHz,
VGS = 0 V
Notes:
(1)C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS
increases from 0 to 80 % VDSS.
Table 7: Switching times
Symbol
td(on)
tr
td(off)
tf
4/21
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 11 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16: "Test circuit for
resistive load switching times"
and Figure 21: "Switching time
waveform" )
DocID025254 Rev 4
Min.
Typ.
Max.
Unit
-
14.5
-
ns
-
7.2
-
ns
-
100
-
ns
-
8
-
ns
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Electrical characteristics
Table 8: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
22
A
ISDM(1)
Source-drain current
(pulsed)
-
88
A
VSD (2)
Forward on voltage
-
1.6
V
VGS = 0 V, ISD = 22 A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 22 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 21:
"Switching time waveform")
ISD = 22 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 21: "Switching time
waveform")
-
350
ns
-
4.7
µC
-
27
A
-
451
ns
-
6.5
µC
-
29
A
Notes:
(1)Pulse
width is limited by safe operating area.
(2)Pulsed:
pulse duration = 300 µs, duty cycle 1.5 %.
DocID025254 Rev 4
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Electrical characteristics
2.1
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Electrical characteristics (curves)
Figure 2: Safe operating area for D²PAK, TO-220 and
I²PAK
Figure 3: Thermal impedance for D²PAK, TO-220 and
I²PAK
Figure 4: Safe operating area for TO-247
Figure 5: Thermal impedance for TO-247
Figure 6: Output characteristics
Figure 7: Transfer characteristics
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DocID025254 Rev 4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Electrical characteristics
Figure 8: Gate charge vs gate-source voltage
Figure 9: Static drain-source on-resistance
Figure 10: Capacitance variations
Figure 11: Output capacitance stored energy
Figure 12: Normalized gate threshold voltage vs
temperature
Figure 13: Normalized on-resistance vs temperature
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Electrical characteristics
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Figure 14: Normalized VDS vs temperature
8/21
Figure 15: Source-drain diode forward
characteristics
DocID025254 Rev 4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
3
Test circuits
Test circuits
Figure 16: Test circuit for resistive load
switching times
Figure 17: Test circuit for gate charge
behavior
Figure 18: Test circuit for inductive load
switching and diode recovery times
Figure 19: Unclamped inductive load test
circuit
Figure 20: Unclamped inductive waveform
Figure 21: Switching time waveform
DocID025254 Rev 4
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Package information
4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
D²PAK package information
Figure 22: D²PAK (TO-263) type A package outline
10/21
DocID025254 Rev 4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Package information
Table 9: D²PAK (TO-263) type A package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.40
0°
DocID025254 Rev 4
8°
11/21
Package information
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Figure 23: D²PAK (TO-263) type A recommended footprint (dimensions are in mm)
12/21
DocID025254 Rev 4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
4.2
Package information
D²PAK packing information
Figure 24: D2PAK type A tape outline
DocID025254 Rev 4
13/21
Package information
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Figure 25: D2PAK type A reel outline
Table 10: D²PAK type A tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
14/21
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
Max.
330
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID025254 Rev 4
13.2
26.4
30.4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
4.3
Package information
I²PAK package information
Figure 26: I²PAK package outline
Table 11: I²PAK package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
-
4.60
A1
2.40
-
2.72
b
0.61
-
0.88
b1
1.14
-
1.70
c
0.49
-
0.70
c2
1.23
-
1.32
D
8.95
-
9.35
e
2.40
-
2.70
e1
4.95
-
5.15
E
10
-
10.40
L
13
-
14
L1
3.50
-
3.93
L2
1.27
-
1.40
DocID025254 Rev 4
15/21
Package information
4.4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
TO-220 type A package information
Figure 27: TO-220 type A package outline
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DocID025254 Rev 4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Package information
Table 12: TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
D1
15.75
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
DocID025254 Rev 4
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Package information
4.5
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
TO-247 package information
Figure 28: TO-247 package outline
0075325_8
18/21
DocID025254 Rev 4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Package information
Table 13: TO-247 package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
5.45
5.60
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
DocID025254 Rev 4
5.50
5.70
19/21
Revision history
5
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Revision history
Table 14: Document revision history
Date
Revision
13-Sep-2013
1
First release.
2
– Modified: title, ID value and features in cover page
– Modified: ID, IDM and PTOT values in Table 2
– Modified: note 2
– Modified: Rthj-case value in Table 3
– Modified: the entire typical values in Table 4, 6, 7 and 8
– Modified: RDS(on) typical value in Table 5
– Modified: Figure 9 and 10
– Added: Section 4: Package information
– Minor text changes
3
– Updated title and description
– Updated Table 2.: Absolute maximum ratings and Table 4.:
Avalanche characteristics
– Updated Figure 5.: Thermal impedance for TO-247 and Figure 6.:
Output characteristics
– Updated 4: Package information
– Minor text changes.
4
Added part number STI28N60M2.
Updated title, silhouette, features and Table 1: "Device summary" in
cover page.
Updated Table 3: "Thermal data" and Section 4: "Package
information".
Minor text changes.
29-Jan-2014
09-Feb-2015
14-Mar-2017
20/21
Changes
DocID025254 Rev 4
STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
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